The invention discloses method to deposit silicon carbide high radiation coating on the surface of the cobalt based high temperature alloy surface, which in particular relates to a technology method to deposit silicon carbide high radiation coating on the surface of the cobalt based high temperature alloy surface. The method solves the problem that good binding between the silicon carbide coating and the cobalt based high temperature alloy is difficult to realize through the commonly used magnetism control sputtering method. The method of the invention comprises the procedures: firstly, the cobalt based high temperature alloy is cleaned with hydrofluoric acid, acetone solution ultrasonic wave, alcoholic solution ultrasonic wave and deionized water. secondly, the processed cobalt based high temperature alloy is fed into a magnetism control sputtering vacuum chamber, the sputtering vacuum chamber is vacuumize, the cobalt based high temperature alloy is heated and the temperature is retained; thirdly, Ar gas is filled into the chamber, and pulse negative bias voltage is exerted to perform reverse sputtering to the cobalt based high temperature alloy surface; fourthly, sputtering power glow is started, to perform pre-sputtering to the silicon carbide coating surface; fifthly, the formal sputtering is performed to the silicon carbide coating surface, to deposit silicon carbide high radiation coating; sixthly, the power source is shut off, and when the temperature in the chamber is reduced to the room temperature, the deposition is completed.