Method for depositing silicon carbide high radiation coating on cobalt based high-temperature alloy surface

A technology of high radiation coating and superalloy, applied in metal material coating process, coating, sputtering and other directions, can solve the problems of poor film deposition effect, difficult to combine silicon carbide coating and cobalt-based superalloy, etc. , to achieve the effect of enhanced adhesion, elimination of interface defects and residual stress, and high emissivity

Inactive Publication Date: 2009-01-14
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that it is difficult to achieve a good combination between the silicon carbide coating and the cobalt-based superalloy by using the commonly used magnetron sputterin

Method used

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  • Method for depositing silicon carbide high radiation coating on cobalt based high-temperature alloy surface

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Example Embodiment

[0013] Specific implementation mode 1: the following combination figure 1 To explain this embodiment, the method for depositing a silicon carbide high-radiation coating on the surface of a cobalt-based superalloy in this embodiment includes the following steps:

[0014] Step 1. Clean the cobalt-based superalloy with hydrofluoric acid for 10-20 minutes; then put it in acetone solution and clean with ultrasonic for 10-20 minutes; put it in alcohol solution and clean with ultrasonic for 10-20 minutes; finally Rinse with deionized water for 10-20 minutes;

[0015] Step 2: Send the treated cobalt-based superalloy into the magnetron sputtering vacuum chamber, and evacuate the magnetron sputtering vacuum chamber. When the vacuum degree in the magnetron sputtering vacuum chamber reaches 10 -4 At Pa, heat the cobalt-based superalloy at a heating temperature of 25 to 500°C, and then heat it for 10 minutes to 2 hours;

[0016] Step 3: Pour Ar gas into the magnetron sputtering vacuum chamber....

Example Embodiment

[0032] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 1, the cobalt-based superalloy is cleaned with hydrofluoric acid for 15-20 minutes; then it is placed in an acetone solution and ultrasonically cleaned for 15-20 minutes; Then put it in the alcohol solution, clean with ultrasonic for 15-20 minutes; finally clean with deionized water for 15-20 minutes. Others are the same as the first embodiment.

Example Embodiment

[0033] Specific embodiment 3: The difference between this embodiment and the first embodiment is that the heating temperature in step 2 is 25-200° C., and then the temperature is kept for 40-80 minutes. Others are the same as the first embodiment.

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Abstract

The invention discloses method to deposit silicon carbide high radiation coating on the surface of the cobalt based high temperature alloy surface, which in particular relates to a technology method to deposit silicon carbide high radiation coating on the surface of the cobalt based high temperature alloy surface. The method solves the problem that good binding between the silicon carbide coating and the cobalt based high temperature alloy is difficult to realize through the commonly used magnetism control sputtering method. The method of the invention comprises the procedures: firstly, the cobalt based high temperature alloy is cleaned with hydrofluoric acid, acetone solution ultrasonic wave, alcoholic solution ultrasonic wave and deionized water. secondly, the processed cobalt based high temperature alloy is fed into a magnetism control sputtering vacuum chamber, the sputtering vacuum chamber is vacuumize, the cobalt based high temperature alloy is heated and the temperature is retained; thirdly, Ar gas is filled into the chamber, and pulse negative bias voltage is exerted to perform reverse sputtering to the cobalt based high temperature alloy surface; fourthly, sputtering power glow is started, to perform pre-sputtering to the silicon carbide coating surface; fifthly, the formal sputtering is performed to the silicon carbide coating surface, to deposit silicon carbide high radiation coating; sixthly, the power source is shut off, and when the temperature in the chamber is reduced to the room temperature, the deposition is completed.

Description

technical field [0001] The invention relates to a process method for depositing a silicon carbide high-radiation coating on the surface of a cobalt-based superalloy. Background technique [0002] SiC (silicon carbide) has mechanical and thermal properties such as high temperature resistance, high radiation, wear resistance and particle impact resistance, good chemical stability, and high strength. The emissivity of SiC is above 0.9, which makes it the material of choice for the preparation of high-temperature radiation-resistant coatings. After the SiC coating is applied to metal materials, it can not only greatly improve the high temperature resistance, wear resistance and radiation resistance of metal materials, but also all properties can be designed within a certain range, so it has received more and more attention. However, it has not been widely used until now, mainly because the preparation of silicon carbide coatings is usually carried out at extremely high temperat...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/54
Inventor 朱嘉琦祝元坤曹世成
Owner HARBIN INST OF TECH
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