Light-emitting diode epitaxial structure containing AlGaN conducting layer, and manufacturing method thereof

Abstract

The invention discloses a light-emitting diode epitaxial structure containing a AlGaN conducting layer, and a manufacturing method thereof. The epitaxial structure is composed of a substrate, a GaN buffer layer, an N type GaN conductive layer, a multi-quantum-well active region and a P type AlGaN conducting layer. The P type conducting layer is made of analuminum-contained AlGaN material and Al components in the AlGaN layer are gradually increased linearly along the growth direction. Accoridng to the invention, with the P type AlGaN conducting layer, barriers for blocking injection of holes into the multi-quantum-well active region at the P type AlGaN electronic blocking layer and the P type GaN conducting layer can be avoided. Because the Al components in the P type AlGaN conducting layer are gradually increased along the growth direction, the polarized charge density, the polarized electric field intensity of the quantum well, and the band bending can be reduced, the electron overflowing blocking effect of the P type AlGaN conducting laywer can be enhanced, and the hole injection blocking can be weakened.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an epitaxial structure of a light-emitting diode with an aluminum-containing conductive layer having a graded aluminum composition and a preparation method thereof. Background technique [0002] A light-emitting diode (referred to as "LED") is a semiconductor solid-state light-emitting device. It uses the conduction band electrons and valence band holes inside the semiconductor material to undergo radiative recombination, and releases energy in the form of photons to directly emit light. By designing different bandgap widths of semiconductor materials, light-emitting diodes can emit light in different bands from infrared to ultraviolet. [0003] Nitride light-emitting diodes have been widely developed around the world due to their advantages of high efficiency, energy saving, long life and small size. Ultraviolet light-emitting diodes with a light emission waveleng...

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Problems solved by technology

[0008] Aiming at the problem of low internal quantum efficiency caused by the overflow of electrons from the multi-quantum well active area and the low efficiency of hole injection into the multi-quantum well active area in the existing GaN-based ultraviolet LED, the present invention proposes a P-type gradient Al group Light-emitting diode epitaxial structure with AlGaN conductive layer divided into AlGaN layer as P-type conductive layer and preparation method thereof

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