Semi-gate controlled source schottky barrier type tunneling field effect transistor

Abstract

The invention relates to a semi-gate controlled source schottky barrier type tunneling field effect transistor. On the premise of no requirements on the introduction of a material such as a compound semiconductor, silicon germanide and germanium with a smaller forbidden bandwidth into the generation of a tunneling part of a device, a source schottky barrier is formed between a metal source and intrinsic silicon, and a semi-gate is used for controlling the barrier width of the source schottky barrier and the energy band bending degree of the intrinsic silicon to control the switching of the device. An asymmetrical semi-gate structural design is adopted, so that gate-induced drain leakage current is remarkably reduced on the premise of keeping gate voltage well controlling the width of the schottky barrier and the energy band bending degree. The semi-gate controlled source schottky barrier type tunneling field effect transistor has the advantages of process simplicity, low cost, high sub-threshold slope, high breakover current, low reverse leakage current and the like, and is suitable to be popularized and used.

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and relates to a half-gate controlled source Schottky barrier type tunneling field-effect transistor suitable for ultra-high-integrated integrated circuit manufacturing. Background technique [0002] Currently, silicon-based PIN-type tunneling field-effect transistors (TFETs) may replace MOSFETs and become the next-generation VLSI logic unit due to their potential to have better switching characteristics and lower power consumption. or storage unit. However, compared with MOSFETs devices, its disadvantage is that the subthreshold slope only partially exceeds MOSFETs devices, and the forward conduction current is too small. And the structure of the region near the drain is similar to that of MOSFETs, so it still has a large gate-induced-drain leakage (GIDL) current when the gate is reverse-biased. In order to realize a tunneling field effect transistor with prac...

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Problems solved by technology

And it is extremely difficult to form a Schottky barrier on the surface of a heavily doped extrinsic semiconductor, and the heavy doping itself also seriously weakens the gate's ability to control the electric field distribution and carrier distribution of the source and drain regions

Therefore, it is difficult to realize high-performance practical Schottky barrier MOSFETs transistors

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