GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a manufacturing method of the GaN-based light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The GaN-based light-emitting diode epitaxial wafer comprises a substrate, a buffering layer, an undoped GaN layer, an n-type layer, a multiple-quantum-well layer and a p-type layer, wherein the multiple-quantum-well layer is of a multi-cycle structure, each cycle of the multiple-quantum-well layer comprises an InGaN quantum-well layer and a quantum barrier layer which grows on the InGaN quantum-well layer, each quantum barrier layer comprises a first InGaN layer, an AlGaN layer and a second InGaN layer, and each AlGaN layer and each second InGaN layer grow on each first InGaN layer in sequence. According to the scheme, the first InGaN layer and the second InGaN layer of each quantum barrier layer make contact with each InGaN quantum-well layer, the InGaN quantum-well layers, the first InGaN layers and the second InGaN layers are made of the same materials, the degree of lattice mismatch is low, produced stress is low, the effect of a piezoelectric polarization electric field is poor, the degree of band bending of the InGaN quantum-well layers and the quantum barrier layers becomes lower, the capacity of restraining charge carriers is improved, and when high current is injected, serious leakage current cannot be formed.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a GaN-based light emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] GaN (Gallium Nitride) is a typical representative of the third-generation wide-bandgap semiconductor materials. Its excellent high thermal conductivity, high temperature resistance, acid and alkali resistance, and high hardness make it widely used in blue, green, UV light-emitting diodes. The core component of a GaN-based light-emitting diode is a chip, which includes an epitaxial wafer and electrodes arranged on the epitaxial wafer. [0003] GaN-based light-emitting diode epitaxial wafers generally include a substrate and a buffer layer, an undoped GaN layer, an n-type layer, a multiple quantum well layer, and a p-type layer that are sequentially grown upward on the substrate. The multiple quantum well layer is made of InGaN A multilayer structure formed b...

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Problems solved by technology

[0005] InGaN quantum well layer and GaN quantum barrier layer will produce lattice mismatch due to different materials, resulting in stress in the multi-quantum well layer, which will cause piezoelectric polarization effect, and form a piezoelectric polarization field in the multi-quantum well layer. The energy bands of the InGaN quantum well layer and the GaN quantum barrier layer are bent, and the bending of the energy band of the InGaN quantum well layer limits its ability to bind carriers (including holes and electrons), especially electrons. When a large current is injected , the InGaN quantum well layer will form a serious leakage current, so the internal quantum efficiency of GaN-based light-emitting diode epitaxial wafers is low

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