Quantum dot electroluminescence device and manufacturing method thereof

Abstract

The invention provides a quantum dot electroluminescence device. The quantum dot electroluminescence device comprises a substrate, an anode, hole transport layers, a quantum dot luminescence layer, an electron transport layer and a cathode, wherein the anode is arranged on the substrate; the hole transport layers are arranged on the anode; the quantum dot luminescence layer is arranged on the hole transport layers; the electron transport layer is arranged on the quantum dot electroluminescence layer; the cathode is arranged on the electron transport layer; and the hole transport layers are P-type doped hole transport layers and / or the electron transport layer is an N-type doped electron transport layer. The invention also provides a manufacturing method of the quantum dot electroluminescence device. A gradient doping effect is formed in the hole transport layers, different band bending degrees of an interface are caused, a ladder energy level is formed, namely HOMO energy level is gradually increased from the anode to the quantum dot luminescence layer in sequence, and then the energy barrier of holes from the injection of the anode to the quantum dot luminescence layer is reduced, so that the luminescence efficiency of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of electroluminescence, and in particular relates to a quantum dot electroluminescence device and a manufacturing method thereof. Background technique [0002] Quantum dot electroluminescent devices (QLEDs) can actively emit light like OLEDs, and have the advantages of fast response, wide viewing angles, thinness, and low power consumption. At the same time, compared with OLEDs, they have higher color purity and can be used in display devices. Wide color gamut. Quantum dot materials can be easily dissolved in a variety of solvents by changing the surface ligands, which is very suitable for low-cost solution processing. [0003] At present, there is a big gap between the luminous efficiency of QLED and OLED. On the one hand, because the material of the QD (quantum dot) light-emitting layer in QLED is prepared by a solution method, the material itself has many defect states, thereby reducing the luminous effi...

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Problems solved by technology

[0003] At present, there is a big gap between the luminous efficiency of QLED and OLED. On the one hand, because the material of the QD (quantum dot) light-emitting layer in QLED is prepared by a solution method, the material itself has many defect states, thereby reducing the luminous efficiency of the material; On the one hand, in terms of device structure design, in order to obtain high-efficiency devices, it is necessary to balance the carrier concentration injected into the light-emitting layer. In OLED design, since the energy level of the light-emitting layer material is moderate, a variety of functional layer materials can be selected to match its energy level. (Energy barrier1eV), and electron injection has almost no energy barrier, resulting in a serious imbalance between electrons and holes, thereby reducing the luminous efficiency of the device

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