MOCVD epitaxy processing method of AlInGaN quaternary alloy thin-film material

Abstract

An MOCVD epitaxy processing method of an AlInGaN quaternary alloy thin-film material belongs to the technical field of semi-conductors. The AlInGaN quaternary alloy thin-film material is formed by virtue of using a metal organic chemical vapor deposition (MOCVD) epitaxy technology and employing a method of alternatively matching and growing ternary alloy InGaN and AlGaN materials in a thickness of atomic level. The AlInGaN quaternary alloy thin-film material prepared by using the aforementioned technology can achieve the following parameter indexes: (1) the half-peak height and width of an X-ray diffraction (XRD) (002) symmetry plane < 240 seconds; (2) the material surface roughness < 1 nm; and (3) the c-face lattice constant mismatch degree with respect to GaN < 0.5%.

Description

technical field [0001] The invention relates to an epitaxial growth process method for aluminum indium gallium nitrogen (AlInGaN) quaternary alloy thin film materials, and belongs to the technical field of semiconductors. Background technique [0002] Light-emitting diode (LED) devices have made rapid progress in recent years, and have been widely used in consumer electronics products and various types of indicating light sources. However, the luminous performance of LED devices is still restricted by the internal quantum efficiency of its quantum wells, such as the polarization effect of materials and the preparation of high-quality quantum well structures. Studies have shown that the photoelectric performance of light-emitting diodes can be effectively improved by using the quaternary alloy AlInGaN thin film material as the barrier layer material of the LED quantum well structure. AlInGaN material has the following advantages: the lattice constant can be adjusted independ...

AI Technical Summary

Problems solved by technology

[0003] AlInGaN quaternary alloy materials and their application in quantum well structures have made considerable progress, but the growth and preparation of high-quality AlInGaN quaternary alloy materials is still relatively difficult, specifically reflected in: 1. GaN-based binary alloy material systems Different materials have different bond length and bond energy, poor mutual solubility, huge difference in decomposition temperature, and desorption of elements during the growth process, which lead to AlInGaN material alloy composition easily deviating from the lattice-matched composition value, and with the increase of growth temperature , AlInGaN quaternary alloy material disorder process intensifies and induces component fluctuations, metal atoms migrate under the action of stress field, forming randomly distributed metal clusters, leading to growth problems such as phase separation and spinodal decomposition

2. The component traction effect and strain effect of the AlInGaN quaternary alloy material will become more significant as the thickness of the material increases, resulting in the deterioration of the surface morphology and the formation of hexagonal pit defects

3. The quality of the heterogeneous interface between AlInGaN and InGaN is difficult to control, and the deviation of components and the degradation of the interface will easily shift the designed lattice matching, thereby reducing the internal quantum efficiency of the quantum well

Images