9 results about "Quaternary alloy" patented technology

This disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes: an interlayer insulating film disposed on a substrate and having a recessed portion of the substrate exposed; a bottom electrode contact embedded in at least a portion of the recessed portion; a magnetic tunnel junction (MTJ) layer disposed on the interlayer insulating film and the bottom electrode contact; and a offset cancellation layer with a magnetization direction parallel to the antiparallel side of a fixed layer, wherein the offset cancellation layer may include a Co alloy, Fe alloy, Ni alloy, or Mn alloy comprising at least one selected from the group consisting of Al, Ga, B, Ir, Zr, Hf, and rare earth metals, or a ternary or quaternary Co alloy, Fe alloy, or Ni alloy comprising one selected from the group consisting of Pt or Pd and at least one selected from the group consisting of Cr, Al, Tb, Si, and B.

The present disclosure provides a Ti-Sn-Al-Nb quaternary alloy and a preparation method thereof. The Ti-Sn-Al-Nb quaternary alloy of the present disclosure is an intermetallic compound material with Ti-Sn-Al ordered phase and Ti-Al-Nb ordered phase as the matrix; wherein the chemical composition of the alloy comprises, in atomic percentage, Al: 5-30 at%, Sn: 5-30 at%, Nb: 1-15 at%, Hf: 0.01-0.5 at%, and the balance: Ti and inevitable impurity elements. The alloy after heat treatment has excellent high-temperature strength, good room-temperature plasticity and excellent oxidation resistance, and is suitable for aerospace high-temperature components.

This invention discloses a method for real-time control of epitaxial layer growth stress. During epitaxial growth, the change in the curvature of the epitaxial film is closely related to the thickness and stress of the epitaxial film. Several 200nm quaternary InGaAsP alloys with different stresses are grown on an InP substrate, and the film stress monitoring software curvature is retrieved during the growth process. This method for real-time control of epitaxial layer growth stress summarizes the relationship between the stress of the InGaAsP quaternary alloy epitaxial layer and the rate of change of the epitaxial film curvature, and refines it into a formula; at the same time, it summarizes the relationship between epitaxial stress and epitaxial process parameters, and refines it into a formula. By applying these two formulas, on the one hand, the epitaxial growth process parameters for a given stress can be quickly located, and on the other hand, the stress can be monitored during the epitaxial growth of the quaternary alloy, and the stress can be adjusted in situ, reducing the number of growth cycles and improving growth efficiency.

The application discloses a copper-based core / multilayer shell structure quantum dot based on gradient active zinc source and a preparation method thereof, and relates to the technical field of quantum dot materials. The application adopts a CuInZnS quaternary alloy core-three-layer ZnS shell structure design, cooperates with zinc source types and solvent coordination system to synergistically control a gradient active zinc source, performs quantum dot step-by-step growth through gradually reducing the activity of the zinc source from inside to outside, realizes fast and uniform nucleation, releases interface stress from inside to outside of the ZnS shell layer in stages, passivates defects and avoids stress concentration to introduce new defects. The prepared copper-based core / multilayer shell structure quantum dot has a significantly improved fluorescence quantum yield; the stability of the quantum dot film in luminescence properties is obviously increased under the condition of a general indoor environment below 200 DEG C high temperature. Compared with a regulation mode of changing the zinc source type alone, the regulation precision is higher, the step-by-step growth requirement of the multilayer shell can be accurately matched, the preparation process is an oil phase conventional process, the operation is simple, the repeatability is good, and the application is suitable for industrialized scale production.

The invention relates to the technical field of metal materials, and particularly discloses a temperature-controlled step-by-step smelting preparation method of a hydrogen-purified vanadium-platinum alloy, and the hydrogen-purified vanadium-platinum alloy is prepared from the following raw materials in parts by weight: 88-92 parts of a vanadium raw material; 8-12 parts of a platinum raw material; 0.03 to 0.06 part of a primary gas phase activator; and 0.15 to 0.25 part of a secondary composite trapping agent. The first-stage gas-phase activating agent is prepared from nano carbon black and lanthanum hexaboride, and the weight ratio of the nano carbon black to the lanthanum hexaboride is (50: 1)-(60: 1). The secondary composite trapping agent is prefabricated quaternary alloy powder and comprises zirconium, yttrium, boron and silicon, and the weight ratio of the zirconium to the yttrium to the boron to the silicon is 40: 40: 5: 15. According to the method, the first-stage gas phase activator and the second-stage composite trapping agent are adopted for synergistic purification, interstitial impurities can be effectively removed, generation of a brittle hard phase is inhibited, the high-plasticity vanadium-platinum alloy is obtained, and the problems that a traditional material is large in brittleness and difficult to carry out cold rolling machining due to oxygen and nitrogen pollution are solved.

The application discloses a kind of Mg-6Zn-1Mn-Sn quaternary anode material and preparation method and application thereof, belong to electrochemical energy storage material technical field.The Mg-6Zn-1Mn-Sn quaternary anode material of the application includes Mg and the following components by weight percentage:Zn 5.5~6.5wt.%、Mn 0.8~1.2wt.%、Sn 2.0~5.0wt.% And inevitable impurities.The anode material is a specific quaternary alloy component system with Mg-6Zn-1Mn as matrix, Sn content between 2.0~5.0wt%, with high discharge voltage, high anode utilization rate and uniform stable discharge morphology, excellent comprehensive performance, average discharge voltage >0.99V, anode utilization rate >38%, specific energy reaches >740mWh·g ‑1 , Overall better than conventional AZ31 and other commercial magnesium alloy anode.

Fuel cell electrode comprising platinum, cerium and zirconium oxide particles, particles of a second metal with a size between approximately 1 nm and approximately 100 nm, and at least one carbon support forming a quaternary alloy catalyst, wherein the fuel cell electrode is produced by manufacturing a binary alloy catalyst by supporting platinum and the second metal on a first carbon support, and mixing the binary alloy catalyst with cerium-zirconium oxide particles supported on a second carbon support, wherein the cerium-zirconium oxide particles have a size between approximately 1 nm and approximately 100 nm, wherein the carbon support is selected from the group consisting of activated carbon with a particle diameter between approximately 1 nm and approximately 1000 nm.graphitized carbon with a particle diameter between approximately 1 nm and approximately 1000 nm and carbon nanofibers with a fiber diameter between 1 nm and 1000 nm and a length between approximately 0.1 nm and approximately 1000 µm.

Ternary and quaternary shape memory alloys, particularly nickel-titanium based quaternary and quaternary shape memory alloys, are disclosed and made by a method employing physical vapor deposition (PVD), such as by sputtering, of NiTiX, wherein X is a ternary metal constituent. By employing PVD processing, ternary and quaternary NiTi alloy bulk materials may be made in in the as-deposited state such that the configuration and conformation of a desired precursor material, e.g., wires, tubes, planar materials, curvilinear, or as the near finished end product, such as a hypotube for stent manufacture, semilunar for cardiac valves or conical for embolic or caval filters, is formed on a removable deposition substrate in the configuration and conformation of the precursor material or near-finished end product.