Method for manufacturing GaN epitaxial thin film by using AlInGaN

An epitaxial thin film, gallium nitride technology, used in semiconductor/solid state device manufacturing, electrical components, circuits, etc.

Active Publication Date: 2014-01-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The disadvantage of this method is that the low-temperature grown gallium nitride produces huge compressive stress due to the lattice mismatch with the sapphire substrate, and since the

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  • Method for manufacturing GaN epitaxial thin film by using AlInGaN
  • Method for manufacturing GaN epitaxial thin film by using AlInGaN
  • Method for manufacturing GaN epitaxial thin film by using AlInGaN

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Embodiment Construction

[0015] see Figure 1 to Figure 4 Shown, the present invention provides a kind of method utilizing AlInGaN to make gallium nitride epitaxial film, comprises the following steps:

[0016] Step 1: take an epitaxial substrate 11, the material of the epitaxial substrate 11 is an epitaxial substrate such as sapphire, silicon or silicon carbide, and the epitaxial substrate 11 is a planar substrate, which provides a nucleation platform for subsequent epitaxial growth ;

[0017] Step 2: Epitaxially develop a dense thin layer 12 on the epitaxial substrate 11, the material of the dense thin layer 12 is AlInGaN, its thickness is 5-100nm, the epitaxial temperature of the dense thin layer 12 is 600-1000°C, grow The time is between 5-1000s. The dense thin layer 12 is used as the nucleation layer for the subsequent gallium nitride epitaxy, which provides raw materials for the subsequent generation of the sparse thin layer 13. It is most important to select the appropriate source gas flow of ...

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Abstract

A method for manufacturing a GaN epitaxial thin film by using AlInGaN includes the following steps that first, an epitaxial substrate is taken; second, a compact thin layer is arranged on the epitaxial substrate in an epitaxy mode, and the compact thin layer is used as an epitaxial nucleating layer of subsequent GaN; third, growth is suspended, and the compact thin layer is decomposed to obtain a loose thin layer; fourth, the GaN epitaxial thin film is formed on the loose thin layer in an epitaxy mode. According to the method for manufacturing the GaN epitaxial thin film by using the AlInGaN, AlInGaN quaternary alloy is used as the epitaxial nucleating layer of the GaN, an incompact AlInGaN epitaxial layer is generated by using the easy-to-dissolve characteristic of In atoms so that the stress from lattice mismatch can be released, and therefore the GaN epitaxial thin film of high quality can be obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for making gallium nitride epitaxial thin films by using AlInGaN. Background technique [0002] Since modern China's electricity mainly relies on thermal power, lack of coal resources, shortage of oil and uncertainty of emerging energy sources, energy conservation and emission reduction have become an important prerequisite for contemporary social and economic development. However, incandescent lamps, energy-saving lamps, high-pressure mercury lamps, etc. that ordinary lighting relies on have a series of shortcomings, such as low luminous efficiency. GaN-based LED lighting has become the basis of energy-saving and environmentally friendly lighting fixtures, and is known as the next-generation lighting technology. [0003] Since the preparation of gallium nitride-based LEDs mainly relies on the epitaxial growth of gallium nitride from sapphire for device fabricati...

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Application Information

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IPC IPC(8): H01L33/00H01L33/32
CPCH01L21/02458H01L21/0254H01L21/0262H01L33/0066
Inventor 冯向旭张宁刘乃鑫付丙磊朱绍歆张连魏同波王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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