Preparation method of CdZnSeS/ZnS quantum dot

A technology of quantum dots and quantum dot solutions, applied in chemical instruments and methods, nanotechnology for materials and surface science, nanotechnology, etc., can solve problems such as unfavorable large-scale production, limitation of quantum dot application, and reduced luminous efficiency , to achieve the effects of good light stability and thermal stability, convenient implementation and good stability

Inactive Publication Date: 2018-04-13
DONGGUAN XUANLANG IND
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  • Description
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Problems solved by technology

In order to be able to be applied well, it is necessary to improve the stability of quantum dots as much as possible, which requires increasing the thickness of the shell layer, but because of the mismatch of lattice parameters between the core and shell, as the shell layer increases, the surface defects also decrease. The increase of luminous efficiency gradually decreases, and the synthesis steps are numerous and auxiliary, which is not conducive to large-scale production, and greatly limits the application of quantum dots.

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  • Preparation method of CdZnSeS/ZnS quantum dot
  • Preparation method of CdZnSeS/ZnS quantum dot
  • Preparation method of CdZnSeS/ZnS quantum dot

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[0031] The preparation method of CdZnSeS / ZnS quantum dot of the present invention, comprises the steps:

[0032] Dissolve the selenium source and sulfur source in the mixed solution of phosphine compounds and long-chain olefins, and mix them uniformly by ultrasonic to obtain the Se-S precursor solution;

[0033] Dissolve the sulfur source in the mixed solution of phosphine compounds and long-chain olefins, and mix them uniformly by ultrasonic to obtain the sulfur precursor;

[0034] Add the zinc source to the mixed solution of long-chain fatty acids and long-chain olefins, stir and heat to 260°C to obtain a clear zinc precursor solution;

[0035] After mixing the cadmium source, zinc source, long-chain olefins, and long-chain fatty acids evenly, under the protection of protective gas, the above mixture is gradually heated to 150 ° C ~ 240 ° C to form a light yellow clear solution, which is cooled to room temperature to obtain Precursor of Cd-Zn;

[0036] Add the combined lig...

Embodiment 1

[0047] The preparation method of CdZnSeS / ZnS quantum dot of the present invention, comprises the steps:

[0048] Get 2mmol selenium powder, 20mmol sulfur powder, 40mmol tri-n-octylphosphine, 60mmol octadecene, dissolve the selenium powder and sulfur powder in the mixed solution of tri-n-octylphosphine and octadecene, and mix them uniformly by ultrasonic to obtain Se- S precursor;

[0049] Take 10mmol of sulfur powder, 30mmol of tributyl phosphate, and 15mmol of octadecene, dissolve the sulfur powder in a mixed solution of tributyl phosphate and octadecene, and mix them uniformly by ultrasonic to obtain a sulfur precursor;

[0050] Take 10mmol of zinc oxide powder, 60mmol of oleic acid, and 80mmol of octadecene, add the zinc oxide powder into the mixed solution of oleic acid and octadecene, stir and heat to 260°C to obtain a zinc precursor;

[0051] Take 2mmol cadmium oxide powder, 80mmol oleic acid, 100mmol octadecene, 30mmol zinc oxide powder, mix the cadmium oxide powder, z...

Embodiment 2

[0058] The preparation method of CdZnSeS / ZnS quantum dot of the present invention, comprises the steps:

[0059] Take 3.5mmol selenium powder, 20mmol sulfur powder, 40mmol tri-n-octylphosphine, and 60mmol octadecene, dissolve the selenium powder and sulfur powder in the mixed solution of tri-n-octylphosphine and octadecene, and mix them uniformly by ultrasonic to obtain Se -S precursor;

[0060] Take 10mmol of sulfur powder, 30mmol of tributyl phosphate, and 15mmol of octadecene, dissolve the sulfur powder in a mixed solution of tributyl phosphate and octadecene, and mix them uniformly by ultrasonic to obtain a sulfur precursor;

[0061] Take 40mmol of zinc oxide powder, 40mmol of oleic acid, and 60mmol of octadecene, add the zinc oxide powder into the mixed solution of oleic acid and octadecene, stir and heat to 260°C to obtain a zinc precursor;

[0062] Take 2.5mmol of cadmium oxide powder, 80mmol of oleic acid, 100mmol of octadecene, and 30mmol of zinc oxide powder. After ...

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Abstract

The invention relates to a preparation method of a CdZnSeS / ZnS quantum dot. The preparation method of the CdZnSeS / ZnS quantum dot comprises the following steps of adding and uniformly mixing combinedligand into Cd-Zn precursor, under protection of shielding gas, heating to 240-310 DEG C, rapidly filling Se-S precursor, and performing mixed reaction for 5-30 min; sequentially slowly filing S precursor and Zn precursor into the obtained CdZnSeS quantum dot solution for reaction for 30-120 min to obtain the CdZnSeS / ZnS quantum dot. According to the preparation method of the CdZnSeS / ZnS quantum dot, core ZnCdSeS excellent in performance and good in stability is formed under the influence of the ligand, and then through the S precursor and the Zn precursor, a quaternary alloy core-shell structured quantum dot can be formed. The CdZnSeS / ZnS quantum dot is good in photostability and thermal stability, reaches a fluorescent yield up to higher than 80% and meanwhile, the preparation of the CdZnSeS / ZnS quantum dot is simple in operation and convenient to implement.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a preparation method of CdZnSeS / ZnS quantum dots. Background technique [0002] Quantum dots are quasi-zero-dimensional nanomaterials with obvious quantum size effects and unique optical properties. When stimulated by light or electricity, quantum dots emit light of a certain wavelength. Its emission spectrum can be adjusted according to the size and component structure of quantum dots. Currently, the synthesis of efficient and stable quantum dots is mostly achieved by coating the surface of the luminescent core with an organic or inorganic layer, such as CdSe / ZnS core-shell quantum dots. In order to be able to be applied well, it is necessary to improve the stability of quantum dots as much as possible, which requires increasing the thickness of the shell, but because of the mismatch of lattice parameters between the core and shell, as the shell increases, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88B82Y20/00B82Y30/00
CPCB82Y20/00B82Y30/00C09K11/883
Inventor 华路张洁君
Owner DONGGUAN XUANLANG IND
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