326 results about "Cadmium oxide" patented technology

The invention relates to a high-performance silver cadmium oxide material and a manufacturing method thereof, which are characterized in that the silver cadmium oxide material comprises the following components: 85 to 97 percent of silver, 2 to 15 percent of cadmium, 0.01 to 0.5 percent of nickel, 0.01 to 1 percent of tin and 0.01 to 0.5 percent of rear earth mixture. The manufacturing method of the high-performance silver cadmium oxide material is characterized in that: a given quantity of silver, cadmium, nickel, tin and rare earth mixture are measured to be arranged inside a middle-frequency induction furnace to be smelted and cast, the cast ingot is extruded by an extruding machine to be thick wires, the thick wires are stretched by a wire-drawing die to be thin wires, the thin wires are pre-oxidized by an internal oxidization furnace, then the thin wires are cut and preformed and finally is processed and formed. The anti-oxidization performance, electric-arc burning loss resistance and the abrasion resistance of the silver cadmium oxide material are improved, and the service life is prolonged, so the high-performance silver cadmium oxide material can be applied to different working environments, has low production cost, simple manufacturing method and low requirements on the device and the production.

The invention relates to a preparation method of a high-oxide content flake-like contact material. The preparation method is suitable for two types of materials comprising a silver-cadmium oxide alloy material and a silver-tin oxide-indium oxide material. The silver-cadmium oxide alloy material comprises, by weight, 75-82% of silver, 15-22% of cadmium oxide, 0-5.5% of copper oxide, 0.1-0.3% of nickel oxide and a trace amount of other oxides. The silver-tin oxide-indium oxide material comprises, by weight, 78-85% of silver, 11-17% of tin oxide, 3-8% of nickel oxide, 0.05-0.25% of nickel oxide and a trace amount of other oxides. The preparation method comprises melting, extrusion, compound silver hot rolling, cold rolling, punching, high-temperature diffusion annealing, internal oxidation treatment and aftertreatment. The prepared high-oxide content flake-like contact material has high oxide content and high compound silver interface bonding strength, has simple production processes and is suitable for large batch production.

A hydrothermal preparation method of a water-soluble ZnCdSe ternary quantum dot belongs to the nano technical field; the invention chooses zinc chloride or zinc Oxide as zinc source, sodium hydrogen selenide formed by selenium powder and sodium borohydride as selenium source, glutathione as stabilizer, leading the ZnSe precursor solution to be prepared under the protection of the nitrogen. The ZnSe precursor solution reacts in the hydrothermal environment to obtain the ZnSe quantum dot. The cadmium chloride or the cadmium Oxide chosen as cadmium source, and the glutathione chosen as the stabilizer are mixed together with the prepared ZnSe quantum dot to obtain the ZnCdSe precursor solution. The water-soluble ZnCdSe quantum dot is obtained by leading the ZnCdSe precursor solution to react in the hydrothermal environment. Due to the mild reaction condition, convenient operation and the simple equipment, the invention leads the water-soluble ZnCdSe quantum dot to be suitable for the industrial production with the better dispersion, better uniformity of the particle size and high fluorescent quantum efficiency. .

The invention relates to a composite electric contact material and a preparation method thereof. The method comprises the following steps: 1, uniformly mixing silver powder and additive powder, blending the mixed powder into slurry with absolute ethyl alcohol and dispersing; 2, taking copper base material or stainless steel as a base material, coating the mixed powder slurry on the base material,drying, and then putting the base material in a protective atmosphere to carry out primary sintering and heat preservation; 3, coating the mixed powder slurry on the base material after cooling, and carrying out re-sintering and heat preservation; 4, repeating the process of step 3, and then cold or hot processing; and 5, putting the cold or hot processed material in an inert gas protective atmosphere to carry out final sintering and heat preservation. The additive is one of or any combination of nickel, rare earth, rare earth oxide, cadmium oxide, zinc oxide, tin oxide, indium oxide, tungsten carbide, boron carbide, diamond and graphite. According to the invention, the combination strength of silver alloy and the copper base material or stainless steel is improved, and the electric conductivity is enhanced. The defect that the silver alloy can not be compounded in a conventional method due to brittleness is overcome.

The invention relates to a preparation method of a modified AgSnO2 electric contact material, in particular to a preparation method of a carbonate modified AgSnO2 electric contact material, belongingto the technical field of material metallurgy. The method comprises the following steps: adding 0.1-2.0 percent of carbonate powder relative to total weight to silver-tin kinetosome powder; mixing andgrinding into 300 meshes and pressing into biscuits under the protective atmosphere of argon; sintering the biscuits at 500-800 DEG C for 4-10 hours; pressing the sintered ingots again, sintering thesintered ingots again at 500-800 DEG C for 5-10h; and finally, and extruding the ingots which are pressed and sintered again at 400-600 DEG C for formation. The modified AgSnO2 electric contact material can replace a toxic silver cadmium oxide electric contact material, favorably solves the temperature rise problem of the electric contact material and improves the comprehensive performance of thematerial; and the prepared electric contact composite material has lower cost, greater serviceable range and longer service life.

The invention belongs to the method for compounding cadmium selenide and quanta of cadmium telluride, which is: use cadmium oxide containing 2~18 carbon atom as cadmium source, selenium powder as selenium source and tellurium powder as tellurium source, and the mol ratio of cadmiumsource and selenium source or tellurium source is 5:1-1:5, dissolve the selenium and tellurium powder with tricapryl phosphine, make oleic acid, and tricapryl phosphine oxide as enveloping agent and the mol ratio of cadmium source and enveloping agent is 1:2-1:6, use benzene, toluene, cyclohexane, normal hexane and normal heptane as solvent, under the condition that the density of cadmium source is 0.001-0.015M, the temperature in autoclave is 140-180deg.C, heat them for 0.8-16 hours and obtain cadmium selenide and quanta of cadmium telluride with different sizes by changing the reaction time. The cadmium selenide and quanta of cadmium telluride has narrower size distribution which is shown as narrower shooting of fluorescence whose half-peak width of quanta of cadmium selenide is 22-33nm and that of quanta of cadmium telluride is 29-35nm.

The present invention relates to a silver tin oxide zinc oxide alloy electric contact, its composition contains 3.5-10.5% of SnO, 1.5-7% of ZnO and the rest is Ag. Said material also contains 0.1-0.8% of Ni, perfectly, 0.1-0.5%. As Compared with existent electric contact, the necessary other element components are added in the raw material, and an unique production process is adopted, the invented bimetal composte rivet contact with excellent performance can be made, so that it can implement the production of the silver tin oxide zinc oxide alloy wire material. Said invention can meet the requirements of high-power relay for using bimetal composite rivet contact.

The application of the invention belongs to the field of glass manufacturing techniques, and particularly discloses a tempered glass manufacturing technique which comprises the following processing steps: (1) burdening: in parts by weight, taking 300-350 parts of quartz sand, 26-32 parts of limestone, 70-100 parts of dolomite, 100-130 parts of sodium carbonate, 5-6 parts of mirabilite, 30-40 parts of feldspar, 0.2-0.4 parts of carbon powder, 5-6 parts of a clarifying agent, 0.6-0.8 parts of molybdenum trioxide, and 1.0-1.2 parts of cadmium oxide; (2) grinding, drying and mixing: grinding raw materials in step (1) to 400-600 mu m, drying powder after grinding, and controlling the water content at 2-4%; put dried raw materials into a mixer and mixing the materials for 1.5-2 min; (3) melting; (4) molding; (5) preheating; (6) preheating; (7) rapid heating; (8) cooling; (9) cooling again; (10) homogeneous processing. Tempered glass manufactured by adopting the tempered glass manufacturing technique has excellent quality, the spontaneous explosion rate of the tempered glass is effectively reduced, and the safety is good.

The invention discloses a making method of CdZnSe as ternary quantum point in the nanometer technical domain, which comprises the following steps: adopting cadmium oxide or cadmium inorganic salt as Cd source, zinc stearate as Zn source and Se powder as Se source; making long chain fat dissolve the cadmium oxide or cadmium inorganic salt to form Cd prosoma; making phosphine dissolve zinc stearate to form Zn prosoma; using phosphine to dissolve Se to form Se prosoma; reacting Cd prosoma, Zn prosoma and Se prosoma in the liquid paraffin; obtaining CdZnSe quantum point; adopting long-chain fat and oil amino as the stabilizer to generate quantum point. The invention simplifies and secures the operation with good repeatability to produce the CdZnSe quantum point with emitting wavelength at 460-580nm, which has even product of quantum point, good monodispersity and stability to improve fluorescence and quantum efficiency obviously.

The invention discloses a water heat preparing method of water-soluble CdTe quantum point in nanometer technical domain, which comprises the following steps: choosing cadmium chloride or cadmium oxide compound as cadmium source; choosing sodium hydride telluride formed by tellurium powder and sodium borohydride as tellurium source; choosing mercapto group amine compound as stabilizer; producing CdTe fore-body solution under the protection of nitrogen; reacting under water-heating environment; getting the product. This invention possesses warm reacting condition, convenience function, simple device, good dispersibility, even particle size and high fluorescence quantum efficiency, which can be fit for industrial production.

The invention provides a cermet material formed by compounding copper, SiC, rare earth and so on. The electric and thermal conductivity, the arc extinguishing, the welding resistance, the current corrosion resistance, the anti-adhesion property and the frictional characteristic of the cermet material can be a par with those of a silver-based contact, and the cermet material can substitute for prior silver-based electric engineering contact materials and copper-based electrical contact materials. The cermet material is characterized by selecting the copper as a core matrix material, taking silicon carbide particles as an enhancement item, selecting rare earth containing lanthanum or cerium as an improvement item, improving the physicochemical properties of the surface and a matrix of a contact material, improving the oxidation resistance and the corrosion resistance of the electrical contact surface, and promoting the adhesive force of a liquid phase and a solid phase. The material can fully achieve current indicators of the contact material and the corresponding electric appliance standard, does not use previous metal silver, does not contain cadmium and cadmium oxide, fully achieves the dual aim of reducing the environmental pollution and saving previous metal resources, greatly reduces the production cost of the contact material, and satisfies the development trend of electric appliance products in China and in the world.

The invention relates to the process for preparing cadmium selenide and cadmium telluride nano sticks , wherein cadmium oxide is used as the monomer, and tetradecanoic acid is used as ligand, by controlling the nucleation and growth procedure of the nanocrystalline, and injecting selenium or tellurium precursor solution into the cadmium precursor solution at the temperature of 190 deg. C to 230 deg. C, the nano sticks can be prepared at the temperature of 160-180 deg. C. The advantages of the cadmium selenide and cadmium telluride nano sticks are high yield, narrow dimension distribution, uniform shapes and fine repeatability for experiment.

The invention discloses a gradient type macromolecule-based neutron absorption grid tray material which comprises a fast neutron slow absorption layer, an intermediate energy neutron absorption layer and a heat neutron absorption layer, wherein the three absorption layers are formed by gradient lamination; a neutron absorption body material doped in the fast neutron slow absorption layer is a lithium fluoride, lithium hydride or boron carbide absorption body material; a neutron absorption body material doped in the intermediate energy neutron absorption layer is a samarium oxide neutron absorption body material; a neutron absorption body material doped in the heat neutron absorption layer is a gadolinium oxide or cadmium oxide neutron absorption body material. The invention also discloses a preparation method of the gradient type macromolecule-based neutron absorption grid tray material. The gradient type macromolecule-based neutron absorption grid tray material has the characteristics of high absorption efficiency, long service life, high mechanical property, simple technology and the like, has a certain absorption effect on gamma photons, can be used for spent fuel storage and neutron sources of other types and has a wide application prospect.

The present invention provides a silver-zinc oxide electrical contact and the preparing method thereof. The electric contact related by the invention is composed of silver, zinc oxide and additive. The preparing method comprises the following procedures: preparing Ag and Zn in proportion, preparing Ag-Zn alloy powder with gas atomizing after melting, oxidizing the alloy powder after abrasive processing, adding additive, and preparing the thread material or sheet material after the techniques of molding, sintering and hot processing. The silver-zinc oxide prepared with the invention has the advantages of sufficient zinc oxidizing, high oxidation efficiency, dispersed arrangement of zinc oxide at the inner part of the power particle, uniform formation, excellent combination property, excellent fusion welding resistance, excellent electrical arc corrosion resistance, low and stable contact resistance, easy soldering, and no danger to the human body and environment. The invention is suitable for industrial production and can replace the poisonous silver-cadmium oxide contact.

In the method, two phases system is formed under following condition: cadmium alkyl carboxylic acid containing 2-18 carbon or cadmium oxide as cadmium source; thiourea or thioacetamide as sulphur source; oleic acid or three octyl phosphine oxide (TOPO) as package agent; water in equivolume and organic compound not dissolved in water as solvent; heating 0.5-24 hours inside autoclave under 120-180 deg.C. Quantum points of cadmium sulphide in different sizes are obtained by changing reaction time. Or, quantum point near to size distribution of crystal seed in larger size is obtained by using obtained quantum point as crystal seed through reaction with new added reactive precursor. The invention realizes controllable size of quantum point, obtains quantum points in narrow distributed sizes. Light in royal purple or blue color is radiated under ultraviolet lamp. quantum efficiency is 3-60%.

The invention discloses a making method of CdSeTe as ternary quantum point in the nanometer technical domain, which comprises the following steps: adopting cadmium oxide or cadmium inorganic salt as Cd source, Se powder as Se source and Te powder as Te powder; making long chain fat dissolve the cadmium oxide or cadmium inorganic salt to form Cd prosoma; using phosphine to dissolve Se and Te to form Se and Te prosoma; reacting Cd prosoma, Te prosoma and Se prosoma in the liquid paraffin; obtaining CdSeTe quantum point; adopting long-chain fat as the stabilizer to generate the CdSeTe quantum point. The invention improves the fluorescent quantum efficiency in the near-infrared zone with even grain size distribution and good stability, which can be widely used in the biology due to good dispersibility, evenness and optical property of CdSeTe quantum point product.

The invention provides a preparation method for hydrogenated bisphenol A and a catalyst for hydrogenation of bisphenol A. The preparation method comprises hydrogenating bisphenol A at a temperature of 50-100 DEG C, under a hydrogen pressure of 5-10 MPa and at presence of a solvent isopropanol and a ruthenium catalyst, so as to generate hydrogenated bisphenol A, wherein the ruthenium catalyst is a Ru-Zn-Ni/TiO2-CdO catalyst, that is, the ruthenium catalyst takes zinc and nickel as auxiliary active compositions and takes titanium dioxide and cadmium oxide as a composite carrier. The conversion rate of bisphenol A can reach 100%, meanwhile the selectivity of hydrogenated bisphenol A is larger than 97%, and the purity of hydrogenated bisphenol A is 99.5% or more.

The invention discloses a high-refractive index lanthanide optical glass NlaSF010, wherein, based on weight percentage, the glass comprises 5.0-12.0 percent of SiO2, 8.0-19.0 percent of B2O3, 23.0-31.0 percent of La2O3, 5.0-16.0 percent of Nb2O5, 2.0-6.5 percent of ZrO2, 0.5-2.5 percent of Y2O3, 0-4.0 percent of ZnO, 0-1.0 percent of CaO, 0.5-4.0 percent of WO3, 0-7.5 percent of Ta2O5, 18.0-33.0 percent of BaO, 0-5.5 percent of TiO2, and 0-1.0 percent of Gd2O3. The invention has no arsenic trioxide, lead dioxide and cadmium oxide, and is a green and environmental-friendly glass; the invention uses the low-price TiO2 to replace the vast majority of the high-price Ta2O5, and also uses the low-price Gd2O3 and BaO to replace the relatively high-price WO3, so as to reduce the raw material cost of the formula about 3-4 times, with no effect on glass quality and performance.

The present invention relates to a method for preparing CeTe/ZnSe core-shell quantum point with water solubility and high fluorescence yield. Said method uses water as solvent, and adopts the following steps: mixing cadmium salt or cadmium oxide and water-soluble mercaptocompound, injection sodium hydrogen telluride or potassium hydrogen telluride produced by adopting sodium borohydride or potassium borohydride and selenium powder and making them be reacted to obtain cadmium telluride precursor solution, then heating said solution in water bath under the protection of nitrogen gas to synthesize cadmium telluride fluorescence quantum point, then making purification and injecting ZnSe monomer, water bath heating and synthesizing CdTe/ZnSe core-shell type quantum point.

The invention discloses a method for preparing a silver/cadmium sulfide/titanium dioxide composite photocatalytic material. According to the method, TBOT and Cd(NO3)2.4H2O are taken as raw materials to prepare CdO/TiO2 with the evaporation-induced self-assembly (EISA) method firstly, then CdO/TiO2 and Na2S.9H2O are taken as the raw materials to prepare CdS/TiO2, and finally CdS/TiO2 and AgNO3 are taken as raw materials to prepare the silver/cadmium sulfide/titanium dioxide ternary composite photocatalytic material with the photodeposition method. The composite material is an inorganic photocatalytic material, is stable in performance, quite high in photocatalytic activity and resistant to chemical corrosion and photocorrosion, and has important significance in photolysis of water, sterilization, preparation of solar sensitization batteries, environment protection and other fields.

The invention relates to a method for preparing nanometer metallic oxide by bulk metallic oxide, which belongs to the technical field of preparation of nanometer materials. Cadmium oxide, zinc oxide and gallium oxide bulk materials are respectively used as raw materials, oleic acid and oleylamine are used as auxiliary materials, and corresponding nanometer metallic oxide is obtained by a solutionrecrystallization process. The shape and the size of the generated nanometer metallic oxide can be adjusted by means of controlling the concentration of an oxide source and reaction time, and the obtained nanometer metallic oxide still has the structure of the bulk materials. The bulk metallic oxide is directly converted into the nanometer metallic oxide, the raw materials used in the preparationmethod are common, cheap and relatively safe, and air stability is high. In addition, the preparation method has the advantages of simple synthetic process, high repeatability, fine sample crystallinity, uniform size distribution and the like, and has a potential of producing the nanometer metallic oxide on a large scale.

The invention discloses a method for producing CdSe quantum points. The invention uses the cadmium oxide and selenium as materials, produces the CdSe quantum points with variable particle size in condition of relative moderate environment. The method can avoid the problem that the tri-n-capryl phosphine (TOP) or tri-n-butyl group phosphine (TBP) are inflammable, explosive and expensive and that the toxin is strong. The operation is safe, convenient, the repeatability is good, it needn't the glove box, and the cost is low. The produce has excellent monodispersity, the particle size is controllable. The synthesized CdSe quantum points can be used as in label material light emission device, and laser field, or can be used in the biological detection and analysis further.

The invention discloses a preparation method of a low-cost cadmium phosphide quantum dot material. The preparation method comprises the following steps: based on a cheap cadmium compound such as cadmium oxide, cadmium acetate or cadmium cetylacetonate and the like as a raw material, dissolving the cadmium compound and long-chain fatty acid in octadecylene at a high temperature so as to prepare a long-chain fatty acid salt of cadmium; or dissolving cadmium cetylacetonate in organic amine, and then carrying out a gas-liquid reaction based on hydrogen phosphide as a phosphorus source so as to prepare the high-quality cadmium phosphide quantum dot luminescent material. According to the invention, a cheap and continuously operable synthesis method is provided for the cadmium phosphide quantum dot material, and a solid foundation is provided for industrialized production of the cadmium phosphide quantum dot material; and through controlling factors such as reaction temperature, time and the like, the luminescence of the cadmium phosphide quantum dot material can be achieved in a wide region ranging from visible light (460nm) to infrared light (1500nm).

A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.

A cadmium oxide (CdO) film doped with any of the Group III elements is substantially transparent to radiation between about 0.7 μm and 12 μm. A film made according to the invention having a sheet resistance of <600 Ω/□ will also have exceptionally low optical absorption throughout the IR range. The film is suitably employed as transparent, electrically conductive electrodes, and can be used in devices such as liquid crystal cells for beam steering, spatial light modulators, optical switches for fiber optical communications, switchable and/or tunable polarization modification components, and top transparent electrodes for SWIR (1.3 and 1.5 μm) VCSELs.