17 results about "Cadmium oxide" patented technology

Provided is an inorganic fiber or inorganic flake having excellent neutron shielding properties. A formulation composed of a base component in which SiO2 and Al2O3 are the main components (in which the total mass ratio of SiO2 and Al2O3 in the base component is 0.60 or more) and a neutron shielding component composed of at least one of gadolinium, gadolinium oxide, samarium, samarium oxide, cadmium, or cadmium oxide is prepared in a ratio of 50 to 90 parts by mass of the base component and 10 to 50 parts by mass of the neutron shielding component, and then melted, thereby obtaining a good amorphous inorganic fiber and inorganic flake.

The invention provides a high-crystallinity near-infrared emission wurtzite CdS quantum dot / Zn < 2 + > modified CdS quantum dot as well as a preparation method and application thereof, and belongs to the technical field of semiconductor quantum dots. The preparation method comprises the following steps: mixing cadmium oxide, a very small amount of zinc acetate, oleic acid and octadecene, heating for degassing, heating to a reaction temperature, and adding an S-ODE precursor for reaction to obtain the zinc-modified wurtzite CdS quantum dot. The CdS quantum dots synthesized under the condition of high concentration are of a wurtzite structure and have high crystallinity, the particle size is remarkably increased, a small amount of zinc acetate is added, disordered nucleation and growth processes under a high-concentration reaction system are effectively separated through a surface adsorption process, and the monodispersed wurtzite CdS quantum dots are obtained. According to the invention, the LED device is prepared by integrating the optimized CdS quantum dots and the 450nm purple light chip, and the dual functions of visible light illumination and night vision application are realized.

The invention belongs to the technical field of metal surface treatment, and particularly relates to application of an HEDP cadmium plating improvement process to a connector. In order to meet the requirements of the cyanide-free cadmium plating process of the aerospace electric connector and the limitation of cyanide, the cyanide-free cadmium plating bath solution provided by the invention comprises the main components of cadmium oxide, HEDP, KOH, a softening agent and a brightening agent, the softening agent is triethanolamine, citric acid and octylphenol polyoxyethylene ether, and the brightening agent is nickel sulfate and Turkey butter. By the adoption of the method, the plating speed can be increased, highly toxic cyanide is completely abandoned, and meanwhile the core indexes such as the uniform plating capacity and the deep plating capacity of the plating solution can be comparable with those of cyaniding cadmium plating.

This invention discloses a cadmium telluride thin-film solar cell with a cadmium oxide passivation layer and its preparation method, including the following steps: (1) Pretreatment: The cadmium telluride thin film covered by the cadmium oxide layer formed by CdCl2 annealing is placed in a vacuum tube furnace, and the vacuum is drawn to a negative pressure state to remove residual O2; (2) Reduction treatment: The vacuum pump is turned off, an inert gas is introduced, the temperature is raised to the reduction reaction temperature and kept at the temperature, and then a mixture of reducing gas and inert gas is introduced under positive pressure to carry out the reduction reaction; the reduction reaction temperature is 200~400℃; the ratio of reducing gas to inert gas mixture is 1-20%; the reaction time is 5-30min; (3) Posttreatment: The heating is turned off, an inert gas is introduced to cool to room temperature to form a cadmium oxide layer covered by a metal Cd layer.

The invention relates to the technical field of preparation of high-purity inorganic nano materials, and discloses a controllable preparation method of a high-purity cadmium telluride nanocrystal, which comprises the following steps: pre-dissolving a conjugated acid salt in a water-phase reaction system, and reacting a cadmium salt precursor with a tellurium source precursor when ammonia gas is introduced as an inorganic gaseous ligand; a pH buffer system is constructed by ammonia gas and conjugated acid salt, and transient stability is provided for the generated cadmium telluride nanocrystals within the pH range for inhibiting the cadmium hydroxide impure phase; according to the method disclosed by the invention, an in-situ pH buffer system is constructed, so that a ligand stabilization function of the ammonia gas is decoupled from an alkaline side reaction phase of the ammonia gas, agglomeration is prevented while an impure phase is inhibited, the ligand and the salt are thoroughly removed after the reaction, and the technical problem that controllability and high purity cannot be obtained at the same time in an inorganic aqueous phase method is solved.

The invention relates to a preparation method of CdZnS / ZnSe / ZnS parabolic energy band structure quantum dots. The preparation method comprises the following steps: preparing an S-ODE precursor solution, an S-TOP precursor solution and a Se-TBP precursor solution; preparing a CdZnS core solution from cadmium oxide, zinc acetate, oleic acid, 1-octadecene and the S-ODE precursor solution; preparing a CdZnS / ZnSe solution from zinc acetate, oleic acid, 1-octadecene, the CdZnS core solution and the Se-TBP precursor solution; the preparation method comprises the following steps: preparing a CdZnS / ZnSe / ZnS parabolic band structure quantum dot solution from zinc acetate, oleic acid, a 1-octadecene CdZnS / ZnSe solution and an S-TOP precursor solution; according to the invention, efficient and stable pure blue light emission is realized through a preparation method of three-shell collaborative design of a CdZnS core, a ZnSe intermediate layer and a ZnS shell.

The application belongs to the field of composite materials and relates to a novel cadmium hydroxide (Cd(OH)2) doped molybdenum oxide photoelectrocatalyst and a preparation method thereof. A cadmium hydroxide doped molybdenum oxide (MoO 3‑x ) film (Cd(OH)2@MoO 3‑x ) is prepared by using a wet chemical one-step electrochemical codeposition method. The introduction of cadmium hydroxide not only significantly improves the light absorption characteristics of the molybdenum oxide material, but also significantly improves the performance of the molybdenum oxide photoelectrocatalytic water splitting for hydrogen production. The preparation process disclosed by the application is simple, has a short time course, simple instruments and equipment, and low cost of non-noble metals, and the prepared Cd(OH)2@MoO 3‑x film has excellent photoelectrocatalytic performance and good application prospect.

The invention relates to the technical field of photoelectric detection, and discloses a doped cadmium oxide quantum dot film, a preparation method thereof and an infrared detector. The method comprises the following steps: mixing a cadmium oxide precursor, an indium doping source, a fluorine doping source, a surface ligand and an organic solvent to form a reaction system, and degassing at a preset first temperature; raising the temperature to a preset second temperature under the protection of inert gas, and keeping the temperature, so that the cadmium oxide precursor is nucleated and grows; after nucleation is completed, quenching, precipitating, washing and re-dispersing to obtain fluorine and indium doped cadmium oxide quantum dot dispersion liquid; cleaning and activating an indium tin oxide interdigital electrode substrate, and preparing a methanol solution containing a short-chain ligand; and depositing the quantum dot dispersion liquid on a treated indium tin oxide interdigital electrode substrate to form an initial quantum dot film, carrying out ligand exchange by using a methanol solution containing a short-chain ligand, and annealing to obtain the fluorine and indium doped cadmium oxide quantum dot film. The doped cadmium oxide quantum dot film prepared by the method is safer and more stable, and the performance can be regulated and controlled.

The invention discloses a FeFET transistor and a related integrated circuit. The channel layer of the transistor (1612a) may be formed of an amorphous oxide semiconductor. Examples of amorphous oxide semiconductors that can be utilized include indium oxide, indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), indium zinc oxide (IZO), gallium zinc oxide (GZO), aluminum zinc oxide (AZO), cadmium oxide, hafnium indium zinc oxide (HIZO), tin oxide, and indium tin zinc oxide (ITZO), etc. The amorphous oxide semiconductor channel layer may also be doped with elements such as gallium, indium, zinc, tin, hafnium, silicon, aluminum to optimize carrier concentration and mobility.

The present application relates to the field of glass powder materials, in particular to H01B1 / 22, more particularly, the present application relates to a single glass powder, front silver paste, solar cell and preparation method.Single glass powder, including CuO, SiO2, ZnO, PbO, MgO, MoO3, Li2O, WO3, Bi2O3, TeO2, CdO one or more kinds;The glass softening temperature of the single glass powder is 300-550 DEG C.The glass powder has low contact resistance, high fill factor, high open circuit voltage and high conversion efficiency, and the glass component particularly contains cadmium oxide, and the maximum advantage is that it has a wide sintering window and a suitable corrosion rate.

The application provides a low-temperature one-pot green synthesis method of CdSe quantum dots, and relates to the technical field of nanometer semiconductor materials, wherein cadmium oxide, selenium powder and long-chain fatty acid are mixed under an air atmosphere, a non-coordination solvent with a boiling point of greater than or equal to 250 DEG C is added, and stirring reaction is carried out at 160-250 DEG C for 5-180 minutes; and CdSe quantum dots are obtained after purification after cooling. The synthesized quantum dots have a narrow half-peak width (24 nm) and a large controllable range (485-650 nm), and have excellent performance, thereby providing strong support for the wide application of colloidal cadmium selenide quantum dots in the fields of optoelectronic devices, biological imaging and display technology; and the method is easy to scale up, can meet the needs of industrial large-scale preparation, and has good economic and social benefits.

The invention provides a CdSe / CdS core-shell quantum dot and a preparation method and application thereof.The preparation method comprises the following steps that cadmium oxide, oleic acid and 1-octadecene are mixed and heated, then a selenium-containing precursor solution is added, and CdSe quantum dots are obtained after a reaction; mixing the CdSe quantum dots with a mixture of 1-octadecene and oleic acid, heating, adding cadmium oleate and octyl mercaptan for reaction, and purifying to obtain oleic acid coated core-shell quantum dots; and dispersing the oleic acid coated CdSe / CdS core-shell quantum dots in n-hexane, mixing with a toluene solution of 3-mercaptopropyl glycidyl ether, stirring at a constant temperature in a protective atmosphere, and carrying out ligand replacement to obtain the CdSe / CdS core-shell quantum dots. The CdSe / CdS core-shell quantum dots are used for preparing the light guide rod coating. Compared with the prior art, the light signal capturing capability of the light guide rod focused on power equipment partial discharge detection is optimized, the light guide efficiency is enhanced through the ultraviolet-visible light conversion function of the quantum dot coating, and the long-term stability of the coating in a dynamic stress environment is guaranteed in combination with a covalent cross-linking technology.

The application relates to the technical field of high-purity inorganic nanomaterial preparation, and discloses a controllable preparation method of high-purity cadmium telluride nanocrystals, which comprises the following steps: pre-dissolving a conjugate acid salt in an aqueous phase reaction system, introducing ammonia as an inorganic gaseous ligand, and making a cadmium salt precursor and a tellurium source precursor react; the ammonia and the conjugate acid salt construct a pH buffer system, transiently stabilize the generated cadmium telluride nanocrystals in a pH range for inhibiting cadmium hydroxide impurities; and the ammonia and the conjugate acid salt are physically removed after the reaction. The application decouples the ligand stability function of the ammonia from the alkaline side reaction of the ammonia by constructing an in-situ pH buffer system, prevents agglomeration while inhibiting impurities, and completely removes the ligand and the salt after the reaction, so that the technical problem that controllability and high purity cannot be achieved simultaneously in the inorganic aqueous phase method is solved.

The application relates to a liquid sunlight methanol synthesis catalyst and a preparation method and application thereof. The catalyst comprises a metal oxide solid solution; the metal oxide comprises cadmium oxide, zinc oxide and zirconium oxide; the ratio of the molar amount of cadmium elements to the total molar amount of zinc elements and zirconium elements in the catalyst is 1:100-10:100; the ratio of the molar amount of zinc elements to the molar amount of zirconium elements in the catalyst is 1:9-9:1; the catalyst is mainly used for liquid sunlight methanol synthesis. After the zinc-zirconium solid solution catalyst is doped with a third component Cd, the carbon dioxide conversion rate and the methanol space-time yield of the catalyst are improved compared with those of the original zinc-zirconium solid solution catalyst.

The application provides an adjustable electric control and all-optical double control photoelectric modulator and a control method, realizes phase modulation and amplitude under all-optical and electric double modulation, and adopts a cadmium oxide layer on the surface of a silicon single groove structure of the modulator, so that the extinction ratio of the modulator is obviously improved, and the phase modulation depth and modulation range are large; the insertion loss of the structure can be adjusted through an external voltage or a pumping light irradiation mode, so that the extinction ratio of different wavelengths is adjusted, and thus corresponding adjustment can be made according to actual conditions; the modulator works at a communication wavelength, and has a wide application prospect; the manufacturing process of the modulator is simple, is compatible with an existing CMOS process, can be produced on a large scale by using an integrated process, and reduces production cost; has a nanoscale integrated size, and is convenient for technicians to carry out integrated application; one metal electrode is arranged on the cadmium oxide thin layer, and the other electrode is arranged on a silicon substrate, so that the device structure is simplified.

The invention relates to the technical field of MOS semiconductors, and discloses a heterogeneous integration-based adaptive sensing, storage and calculation integrated chip and a preparation method thereof, the heterogeneous integration-based adaptive sensing, storage and calculation integrated chip comprises an IGCdO transistor and a TaOx memristor, the IGCdO transistor comprises a substrate, a hafnium aluminum oxide layer, a grid electrode, a source metal layer, drain electrode metal, an indium gallium cadmium oxide layer and a color-changing film; the grid electrode is in direct contact with the substrate, and the grid electrode is located under the indium gallium cadmium oxide layer; and the color-changing film covers the surface of the indium gallium cadmium oxide layer. According to the invention, by integrating the color-changing film with light adaptive capability, the wide bandgap oxide semiconductor phototransistor and the threshold switch memristor in a single chip, on-chip closed-loop processing of illumination perception, signal conversion and pulse coding is realized; physical separation and data migration among the sensing unit, the storage unit and the computing unit in a traditional visual system are eliminated, so that real sensing, storage and computing integrated collaboration is achieved on the device level, and system power consumption and processing delay are greatly reduced.

The composite diaphragm for a zinc secondary battery, including: a base diaphragm and a conductive film for the zinc secondary battery, the conductive film being connected to one end of the base diaphragm. The conductive film includes a porous polymer film, and pores of the porous polymer film are filled with conductive compositions, the conductive compositions including 1-10 parts by weight of a conductive agent and 0.1-1 part by weight of an additive. The conductive agent includes at least one of graphite, conductive carbon black, acetylene black, or a graphene carbon nanotube; and the additive includes at least one of a tin powder, a tin dioxide powder, a bismuth powder, a bismuth oxide powder, an indium powder, an indium oxide powder, a lead powder, a lead oxide powder, a cadmium powder, or a cadmium oxide powder.