Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer

A technology of solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve problems such as difficulties in the industrialization of copper indium gallium selenide thin-film solar cells, rough CIGS thin film surfaces, environmental pollution, etc., and achieve low cost, high repeatability, and reduced pollution effect

Inactive Publication Date: 2013-09-11
TIANJIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For large-scale and large-area CIGS thin-film solar cells, the three-step co-evaporation method is more complicated, and it is difficult to precisely control the composition and deposition process and improve the repeatability of film properties; and the two-step sputtering method also has shortcomings In the process of sputtering pre-layers, In-rich and Ga-rich pre-layers are likely to cause r

Method used

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  • Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer
  • Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer
  • Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer

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Experimental program
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Embodiment 1

[0036]The film samples were obtained by DC magnetron sputtering and radio frequency magnetron sputtering on the JGP-450 magnetron sputtering deposition system. The sputtering targets were high-purity (99.99% ) metal molybdenum (Mo) target and high-purity (99.99%) copper indium gallium selenide (CuIn 0.7 Ga 0.3 Se 2 ) quaternary alloy target, using a square Soda-lime glass with a side length of 2.5 cm and a thickness of 1 mm as the substrate. Before putting the soda-lime glass into the chamber, it was cleaned with acetone ultrasonically for 20 min, and then with alcohol ultrasonically. 5 minutes and blow dry. The background vacuum of the experiment is 4.0×10 -4 Pa, before depositing the Mo film, the substrate was bias cleaned for 15 min, the air pressure during cleaning was 2.0 Pa, and the bias voltage was -400 V. During the deposition of the film, the substrate is continuously rotated to improve the uniformity of the film. At room temperature, a Mo back electrode with a...

Embodiment 2

[0039] The film samples were obtained by DC magnetron sputtering and radio frequency magnetron sputtering on the JGP-450 magnetron sputtering deposition system. The sputtering targets were high-purity (99.99% ) metal molybdenum (Mo) target and high-purity (99.99%) copper indium gallium selenide (CuIn 0.7 Ga 0.3 Se 2 ) quaternary alloy target, using a square Soda-lime glass with a side length of 2.5 cm and a thickness of 1 mm as the substrate. Before putting the soda-lime glass into the chamber, it was cleaned with acetone ultrasonically for 20 min, and then with alcohol ultrasonically. 5 minutes and blow dry. The background vacuum of the experiment is 4.0×10 -4 Pa, before depositing the Mo film, the substrate was bias cleaned for 15 min, the air pressure during cleaning was 2.0 Pa, and the bias voltage was -400 V. During the deposition of the film, the substrate is continuously rotated to improve the uniformity of the film. At room temperature, a Mo back electrode with ...

Embodiment 3

[0041] The film samples were obtained by DC magnetron sputtering and radio frequency magnetron sputtering on the JGP-450 magnetron sputtering deposition system. The sputtering targets were high-purity (99.99% ) metal molybdenum (Mo) target and high-purity (99.99%) copper indium gallium selenide (CuIn 0.7 Ga 0.3 Se 2 ) quaternary alloy target, using a square Soda-lime glass with a side length of 2.5 cm and a thickness of 1 mm as the substrate. Before putting the soda-lime glass into the chamber, it was cleaned with acetone ultrasonically for 20 min, and then with alcohol ultrasonically. 5 minutes and blow dry. The background vacuum of the experiment is 4.0×10 -4 Pa, before depositing the Mo film, the substrate was bias cleaned for 15 min, the air pressure during cleaning was 2.0 Pa, and the bias voltage was -400 V. During the deposition of the film, the substrate is continuously rotated to improve the uniformity of the film. At room temperature, a Mo back electrode with ...

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Abstract

The invention discloses a preparation method of a CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer. The method includes adopting a direct-current magnetron sputtering method for depositing a double-layer metal Mo electrode on soda-lime glass, and then using a radio-frequency magnetron sputtering method for sputtering a single CIGS quaternary alloy target (CuIn0.7Ga0.3Se2) to deposit a CIGS thin film on the Mo electrode. Certain substrate temperature and sputtering power are kept in the sputtering process, the CIGS thin film obtained by sputtering is provided with a chalcopyrite structure and suitable for serving as the absorbing layer of a solar cell, and the method is low in cost, simple in process, capable of omitting selenization annealing and more beneficial to environment protection.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for preparing an absorbing layer of a copper indium gallium selenium thin film solar cell. Background technique [0002] Copper indium gallium selenide thin-film solar cells are considered to be the most potential next-generation solar cells. They have the advantages of long life, stable performance, low production cost, strong radiation resistance, excellent weak light response characteristics and high photoelectric conversion efficiency. . At present, the structure of copper indium gallium selenide thin film solar cells is generally composed of soda-lime glass, metal Mo electrode, absorption layer copper indium gallium selenide (CIGS) film, buffer layer cadmium sulfide (CdS), and zinc oxide (ZnO), aluminum-doped Zinc oxide (AZO), Al / Ag upper electrode composition; Mo electrode is mainly prepared by DC magnetron sputtering method, absorbing layer copper...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C14/35
CPCY02P70/50
Inventor 李德军贾涛董磊
Owner TIANJIN NORMAL UNIVERSITY
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