GaN-based MS grid enhancement type high electron mobility transistor and manufacture method thereof

Abstract

The invention discloses a GaN-based MS grid enhancement type high electron mobility transistor and a manufacture method thereof which mainly resolve the problems of low current density and poor reliability of a GaN-based enhancement type device. The structure of the device is that a transition layer (2) and a GaN main buffer layer (3) are sequentially arranged on a lining (1), a groove (4) is etched in the middle of the GaN main buffer layer, an AlGaN main barrier layer (5) is respectively arranged above the GaN mian buffer layer (3) on two sides of the groove, and a GaN auxiliary buffer layer (6) and an AlGaN auxiliary barrier layer (7) are sequentially arranged on the inner wall of the groove and the surface of the AlGaN main barrier layer (5) on two sides of the groove. A source electrode (8), a drain electrode (9), a grid electrode (11) and a medium layer (10) are arranged on the AlGaN secondary barrier layer (7). The source electrode (8) and the drain electrode (9) are respectively located on two sides above the AlGaN auxiliary barrier layer (7), the grid electrode (11) is located in the middle above the AlGaN auxiliary barrier layer (7), and the medium layer (10) is distributed on an area outside the source electrode, the drain electrode and the grid electrode. The transistor has the advantages of being good in enhancement type characteristic, high in current density, high in breakdown voltage, simple and mature in manufacture process and high in reliability, thereby being capable of being used in high temperature switch devices and digital circuits.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to semiconductor materials, devices and manufacturing techniques thereof. Specifically, it is a GaN-based MS gate enhanced high electron mobility transistor and its manufacturing method, which can be used in high-temperature and high-power applications and basic units of digital circuits. Background technique [0002] With the development of modern weaponry and aerospace, nuclear energy, communication technology, automotive electronics, and switching power supplies, higher requirements are placed on the performance of semiconductor devices. As a typical representative of wide bandgap semiconductor materials, GaN-based materials have the characteristics of large bandgap width, high electron saturation drift velocity, high critical breakdown field strength, high thermal conductivity, good stability, corrosion resistance, and radiation resistance. Used in the production of high...

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Problems solved by technology

[0010] (1) The increase of the threshold voltage is often at the expense of reducing the current density, and it is difficult to achieve an enhanced device with high threshold voltage and high current density;

[0011] (2) Both trench gate technology and fluorine ion implantation technology will cause damage to the material. Although the damage can be eliminated after annealing, the residual damage will still affect the performance and reliability of the device. At the same time, the repeatability of this process is still low. not tall;

[0012] (3) The process of making a short-channel device with a short gate length is relatively difficult, resulting in low reliability of the device

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