Metal insulated semi-conductor (MIS) grid GaN base enhancing high electro mobility transistor (HEMT) device and manufacture method

Abstract

The invention discloses a metal insulated semi-conductor (MIS) grid GaN base enhancing high electro mobility transistor (HEMT) device and a manufacture method, which mainly solve the problems that the existing GaN base enhancing device is low in threshold voltage, poor in controllability and low in reliability. The device comprises a substrate (1), a transition layer (2), a GaN main buffering layer (3) and an N-type AlGaN main barrier layer (4). A source (9) and a drain (10) are arranged on two sides of the top end of the N-type AlGaN main barrier layer (4), a grid (13) is arranged in the middle of the top end of the source (9) and the drain (10), a groove (5) is etched in the middle of the GaN main buffering layer (3), the bottom of the groove is a 0001 polarity plane, a lateral side of the groove is a non-0001 plane, and an inner wall of the groove extends outwards to form a GaN auxiliary buffering layer (6), a AlGaN auxiliary barrier layer (7) and a medium layer (8). The grid (13) is deposited on the medium layer (8). The MIS grid GaN base enhancing HEMT device and the manufacture method have the advantages of being high in threshold voltage, good in regulation performance, high in current density, good in pinching-off performance, simple and mature in manufacture process and good in repeatability and can be used for high temperature high power application situations and digital circuits.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to an MIS gate GaN-based enhanced HEMT device and a manufacturing method, which can be used in high-temperature and high-power applications and form basic units of digital circuits. Background technique [0002] With the development of modern weaponry and aerospace, nuclear energy, communication technology, automotive electronics, and switching power supplies, higher requirements are placed on the performance of semiconductor devices. As a typical representative of wide bandgap semiconductor materials, GaN-based materials have the characteristics of large bandgap width, high electron saturation drift velocity, high critical breakdown field strength, high thermal conductivity, good stability, corrosion resistance, and radiation resistance. Used in the production of high temperature, high frequency and high power electronic devices. In a...

AI Technical Summary

Problems solved by technology

[0012] First, there is a trade-off relationship between threshold voltage and current density, and it is difficult to achieve coexistence of high threshold voltage and high current density, and the regulation of threshold voltage is poor;

[0013] Second, whether etching to form trench gates or fluorine ion implantation will cause damage to the material, although a certain amount of damage can be eliminated after annealing, the remaining damage will still affect device performance and reliability. At the same time, the repeatability of this process is still low. not tall;

[0014] Third, when forming short-channel devices for microwave applications, it is necessary to use high-end process equipment such as electron beam direct writing to produce short gate lengths, and the process is relatively difficult.

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