InGaN/GaN quantum well grown on ScMgAlO4 substrate and preparation method of InGaN/GaN quantum well

Abstract

The invention discloses an InGaN / GaN multi-quantum well grown on a ScMgAlO4 substrate. The InGaN / GaN multi-quantum well comprises a first GaN buffer layer, an amorphous AlN insertion layer, a second GaN buffer layer and an InGaN / GaN quantum well which are sequentially grown on the ScMgAlO4 substrate. The invention also discloses a preparation method of the InGaN / GaN multi-quantum well grown on the ScMgAlO4 substrate. The InGaN / GaN multi-quantum well has the advantages of simple growth process and low preparation cost, and moreover, the prepared InGaN / GaN multi-quantum well is low in defect density, good in crystal quality and excellent in luminous performance.

Description

technical field [0001] The present invention relates to InGaN / GaN multi-quantum well and its preparation method, in particular to a kind of InGaN / GaN multiple quantum well (ScMgAlO 4 ) InGaN / GaN multiple quantum wells on a substrate and a preparation method thereof. Background technique [0002] GaN and its related group III nitrides have excellent electrical, optical, and acoustic properties, and have been widely used in the preparation of light-emitting diodes (LEDs), laser diodes (LDs), and field-effect transistors. [0003] At present, if LEDs are to be widely used on a large scale, it is necessary to further improve the luminous efficiency of LED chips. However, the luminous efficiency of commercial LEDs still needs to be improved, which is mainly due to the use of epitaxial growth on sapphire substrates. On the one hand, due to the lattice mismatch between sapphire and GaN as high as 13.3%, a high dislocation density is formed during the epitaxial GaN film process, w...

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Problems solved by technology

However, growing GaN thin films on these substrates still faces many problems

For example, although the Si substrate is cheap and large in size, the lattice mismatch between the Si substrate and the epitaxial layer is relatively large; metal substrates with high thermal conductivity are mostly face-centered cubic or body-centered cubic structures, and the grown GaN films are prone to other impurity phases; La 0.3 Sr 1.7 AlTaO 6 and LiGaO 2 There is a low lattice mismatch between the substrate and the GaN thin film, but the preparation process of the large-sized substrate is difficult, and the quality of the single crystal of the substrate is poor, which is not conducive to the growth of high-quality GaN thin film and the industrialization of high-performance GaN thin film devices

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