Gallium nitride-based light-emitting diode

A light-emitting diode, gallium nitride-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of poor hole injection efficiency and achieve the effect of improving efficiency and good electron blocking effect

Active Publication Date: 2017-05-31
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is also a certain amount of hole injection in the non-V-type defect region (C-plane), and the hole injection efficiency in this region is poor, so how to improve the hole injection of the C-plane has become a topic of discussion

Method used

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  • Gallium nitride-based light-emitting diode
  • Gallium nitride-based light-emitting diode
  • Gallium nitride-based light-emitting diode

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Embodiment Construction

[0039] The light-emitting diode of the present invention and its manufacturing method are described in detail below in conjunction with the schematic diagram, so as to fully understand how the present invention applies technical means to solve technical problems and achieve the realization process of technical effects and implement them accordingly. It should be noted that, as long as there is no conflict, each embodiment of the present invention and each feature in each embodiment can be combined with each other, and the technical solutions formed are all within the protection scope of the present invention.

[0040] figure 1 A GaN-based light-emitting diode with a traditional structure is shown, which in turn includes: a growth substrate 100, a buffer layer 110, an n-type gallium nitride layer 120, an InGaN / GaN superlattice structure 130, and a multiple quantum well active layer 140 Layer, a p-type AlGaN electron blocking layer 150 and a p-type gallium nitride layer 160, wherein...

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Abstract

The invention discloses a gallium nitride-based light-emitting diode, which successively comprises a n-type nitride layer, an active layer, an electron blocking layer, an energy band contorted layer and a p-type nitride layer, which is characterized in that the surface of the active layer is provided with a V-type defect and a planar area connected with the V-type defect. The material of the energy band contorted layer possesses low-enough gap, which makes the energy band of the electron blocking layer contorted, the effective barrier height of the electron blocking layer for the electron hole is reduced, the efficiency of the electron hole injected from C-plane is strengthened and the light-emitting efficiency of the LED is improved.

Description

Technical field [0001] The invention belongs to the field of semiconductor lighting, and specifically relates to a gallium nitride-based light-emitting diode. Background technique [0002] GaN-based light-emitting diodes (Light Emitting Diodem, LED for short) have been widely used in various light source fields such as backlighting, lighting, car lights, and decorations due to their high luminous efficiency. Further improving the luminous efficiency of LEDs is still the focus of the current industry development. The luminous efficiency is mainly determined by two factors. The first is the radiation recombination efficiency of electrons and holes in the active area, that is, the internal quantum efficiency; the second is optical Extraction efficiency. There have been extensive reports on techniques to improve these two efficiencies. In terms of improving internal quantum efficiency, such as quantum well band design, improving crystal quality, and improving hole injection efficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/06H01L33/14
CPCH01L33/02H01L33/06H01L33/145
Inventor 陈秉扬张中英赖昭序曾建尧张洁朱学亮刘信佑卢德恩刘建明
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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