AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof

An LED epitaxial wafer and deep ultraviolet technology, which is applied in electrical components, circuits, semiconductor devices, etc., can solve the problem that the quality of AlGaN-based deep ultraviolet LED epitaxial wafers needs to be improved.

Pending Publication Date: 2020-10-02
SHENZHEN GONGYAN NETWORK TECH
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[0004] The object of the present invention is AlGaN-based deep ultraviolet LED epitaxial wafer and its preparation method, aimin

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  • AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof
  • AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof
  • AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof

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[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or collections thereof.

[0031] It should also be understood that the terminology used ...

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Abstract

The invention discloses an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method thereof. The AlGaN-based deep-ultraviolet LED epitaxial wafer comprises a silicon carbide substrate, an Ag layer deposited on the silicon carbide substrate, an AlN buffer layer grown on the Ag layer, an AlGaN buffer layer grown on the AlN buffer layer, a non-doped AlGaN layer grown on the AlGaN buffer layer, an n-type doped AlGaN layer grown on the non-doped AlGaN layer, an AlGaN multi-quantum well layer grown on the n-type doped AlGaN layer, an electron blocking layer grown on the AlGaN multi-quantum well layer, and a p-type doped GaN film grown on the electron blocking layer. According to the invention, a stripping process is not needed, the external quantum efficiency is greatly improved, dislocation formation can be reduced, the radiation recombination efficiency of carriers is improved, the deep ultraviolet LED with high thermal conductivity, high electric conductivity and high light-emitting performance can be obtained, the current distribution of the deep ultraviolet LED is more uniform, the light extraction efficiency is improved, and the heat dissipation capability is good; and the preparation process is simple and has repeatability.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method. Background technique [0002] Deep ultraviolet light has broad application prospects in the fields of national defense technology, information technology, biopharmaceuticals, environmental monitoring, public health, sterilization and disinfection. The traditional ultraviolet light sources currently used are gas lasers and mercury lamps, which have the disadvantages of large volume, high energy consumption and pollution. AlGaN-based compound semiconductor ultraviolet light-emitting diode (LED) is a solid-state ultraviolet light source, which has the advantages of small size, high efficiency, long life, environmental friendliness, low energy consumption and no pollution. AlGaN material with high Al composition is an irreplaceable material system for the preparation of high-performance deep-...

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Application Information

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IPC IPC(8): H01L33/10H01L33/00H01L33/06H01L33/14H01L33/32
CPCH01L33/007H01L33/06H01L33/10H01L33/145H01L33/325
Inventor 高芳亮杨金铭
Owner SHENZHEN GONGYAN NETWORK TECH
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