GaN-based nanorod LED epitaxial wafer growing on silicon/graphene composite substrate and preparation method of GaN-based nanorod LED epitaxial wafer

Abstract

The invention discloses a GaN-based nanorod LED epitaxial wafer growing on a silicon / graphene composite substrate and a preparation method of the GaN-based nanorod LED epitaxial wafer. The GaN-based nanorod LED epitaxial wafer comprises non-doped GaN nanorods growing on the silicon / graphene composite substrate, n-type doped GaN layers growing on the non-doped GaN nanorods, InGaN / GaN quantum wellsgrowing on the n-type doped GaN layers and p-type doped GaN layers growing on the InGaN / GaN quantum wells. The preparation method of the GaN-based nanorod LED epitaxial wafer has the advantages of simple growth process and low preparation cost, and the prepared LED epitaxial wafer is low in defect density, good in crystallization quality and good in electrical property and optical property.

Description

technical field [0001] The invention relates to the field of LED epitaxial wafers, in particular to a GaN-based nanocolumn LED epitaxial wafer grown on a silicon / graphene composite substrate and a preparation method thereof. Background technique [0002] As a new type of solid-state lighting source and green light source, light-emitting diode (LED) has outstanding features such as energy saving, environmental protection, small size, wide range of uses and long service life. It has a wide range of applications in the fields of outdoor lighting, commercial lighting and military lighting. application. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions have become important issues facing the world. A low-carbon economy based on low energy consumption, low pollution, and low emissions is an important direction for economic development. In the field of lighting, LED, as a new type of green s...

AI Technical Summary

Problems solved by technology

However, the quality of GaN thin films prepared on Si substrates is not as good as that of GaN single crystal thin films prepared on sapphire substrates. A large number of dislocations appear in the GaN epitaxial layer; secondly, the thermal expansion coefficient of Si is 2.59×10 -6 K -1 , the thermal mismatch with GaN is as high as 54%, which will lead to a huge tensile stress in the epitaxial film, which is more likely to cause cracks in the epitaxial film

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