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393results about How to "Simplify the packaging process" patented technology

Method for manufacturing color temperature tunable LED lamp and LED lamp

The invention discloses a method for manufacturing a color temperature tunable LED lamp and the LED lamp. The method comprises the following steps: distributing a circuit board and fixed welding positions of LED chips on a substrate according to the luminance distribution conditions and manufacturing requirements of a plurality of LED chips; selecting a material for contact positions of the substrate and the LED chips according to material types of base layers of the LED chips, and carrying out adhesive dispensing and fixed welding on the substrate; blending different proportions of fluorescent powder according to the color temperature requirement of the LED lamp, and mixing and stirring the fluorescent powder and silica gel according to the required proportion; dispensing the mixed fluorescent powder gel on the surfaces of the LED chips; and baking the LED chips, coating with protective adhesive, and completing the encapsulation process of the plurality of LED chips. The manufacturing method has advanced process and easily controlled flow. The color temperature tunable LED lamp has good color rendering index and high luminous efficiency, and the color rendering index and the luminous efficiency cannot be reduced because of the change of the color temperature.
Owner:GUANGDONG SEEDCOM ELECTRICAL & LIGHTING +1

Double-wafer integrated silicon-based super-thin micro-hemispherical resonator gyroscope and preparation method thereof

The invention discloses a double-wafer integrated-form silicon-based ultrathin micro-hemispherical resonator gyroscope. The double-wafer integrated-form silicon-based ultrathin micro-hemispherical resonator gyroscope comprises a first silicon wafer, a second silicon wafer, a micro-hemisphere casing, driving electrodes and detecting electrodes. The micro-hemispherical casing is arranged between the first silicon wafer and the second silicon wafer. The casing bottom of the micro-hemispherical casing is fixedly connected with the second silicon wafer, and the upper edge of the micro-hemispherical casing is in contacted with the lower surface of the first silicon wafer. The driving electrodes are arranged on the periphery of the micro-hemispherical casing and between the first silicon wafer and the second silicon wafer. One ends of the driving electrodes are fixedly connected with the second silicon wafer, and the other ends of the driving electrodes are movably connected with the first silicon wafer. One ends of the detecting electrodes are fixedly connected with the first silicon wafer, and the other ends of the detecting electrodes are movably connected with the inner wall of the micro-hemispherical casing. The double-wafer integrated-form silicon-based ultrathin micro-hemispherical resonator gyroscope has the advantages of small volume, light weight, low cost, high reliability, low power consumption, mass production and the like, is expected to be widely used in the fields of aerospace, automobile, medical treatment, photography, electronics consumption and the like, and has very broad application prospects.
Owner:SOUTHEAST UNIV

High power LED phase transition heat sink structure

The invention discloses a high-power LED phase-change heat sink structure, the heat sink body of the structure is a circular or square structure with an cavity, a boiling structure and a low temperature boiling heat transfer working medium are arranged in the cavity, a sealing end cover is arranged at the upper end of the heat sink body and tightly connected with the heat sink body, thus forming the closed cavity, the inner surface of the sealing end cover is a condensation structure, and the cavity is sealed into the vacuum state; at least one high-power LED chip is fixed at the lower end of the outside of the heat sink body, an electrode is arranged outside of the phase-change heat sink, the phase-change heat sink, the electrode and a lens are connected by packaging resin, and the high-power LED chip is directly connected with the electrode by a gold wire. The high-power LED phase-change heat sink structure utilizes the liquid-gas phase change of the working medium to realize the isothermal effect of the heat sink body to reduce the temperature difference at upper and lower ends of the heat sink, thus effectively conducting the generated heat of the high-power LED chip out, realizing the integration of the high-power LED and a high-efficiency heat radiating device and having the advantages of light weight, high power, simple structure, high heat radiation efficiency, long service life and no consumption of additional energy, etc.
Owner:SOUTH CHINA UNIV OF TECH

400 Gbps hot-plug high-speed optical transceiver module

The invention provides a 400 Gbps hot-plug high-speed optical transceiver module which is suitable for the optical communication technical field. The 400 Gbps hot-plug high-speed optical transceiver module comprises an optical interface unit, a photoelectric transceiver unit and an electrical interface unit; the photoelectric transceiver unit is used for achieving the functions of photoelectric conversion and high-speed electrical signal processing through a photoelectric transceiver chip; the internal working process of the photoelectric transceiver chip comprises receiving an electrical signal input through the electrical interface unit by a transmitting terminal data clock recovery circuit, loading the electrical signal to a laser after the pretreatment through a driving circuit, converting the high-speed electrical signal into a high-speed optical signal through the laser, reusing the high-speed optical signal through a wavelength division multiplexer to be output, reusing the received optical signal into a 16-channel optical signal through a wavelength division demultiplexer to be transmitted to an optical detector and transmitting the 16-channel optical signal to a trans-impedance amplifier and a receiving terminal data clock recovery circuit after photoelectric conversion to be processed. According to the 400 Gbps hot-plug high-speed optical transceiver module, the factors such as the cost, the transmission loss, the chromatic dispersion and the size are considered to select different optical transceiver modules and accordingly the long-distance single-mode optical fiber transmission or the short-distance multimode transmission is implemented.
Owner:WUHAN TELECOMM DEVICES

Double-hollow glass ceiling module with film suspended therein

The invention discloses a double-hollow glass ceiling module with a film suspended therein. An optical control film serves as a middle layer, and an internally suspended film structure frame, a mounting structure frame, a reinforcing separating strip and glass are sealed into an integral double-hollow glass plate. An inner structure frame and an outer structure frame are made from a novel heat-isolating material with a coefficient of thermal expansion similar to that of the glass. The internally suspended film structure frame is structurally connected through a heat-isolating bridge. A butyl rubber tape on the outer surface of the internally suspended film structure frame serves as a first sealing layer. A second sealing layer consists of the external reinforcing separating strip and a silicone structural sealant, the whole structure is always consistent to the thermal deformation of the glass, so that the sealing capability of the whole system is more reliable, and the heat-isolating property, the moisture condensation-preventing property, the sound-isolating property and the like are greatly improved. Dirt is not easily accumulated on the outer surface of a mounted ceiling, so that the ceiling is convenient to clean and maintain. The double-hollow glass ceiling module has a flexible assembling and mounting way, and can be applied to different vertical surfaces of an outer building rail.
Owner:伟视幕墙(淮安)有限公司

Chip encapsulation structure and circuit structure

The invention provides a chip encapsulation structure and a circuit structure. The chip encapsulation structure comprises at least two chips, a connection part, multiple second welding balls and a substrate; the active surface of each chip in the at least two chips is positioned in the same plane; the active surface of each chip comprises a first area and a second area; multiple first bonding pads are arranged in the first area; at least one second bonding pad is arranged in the second area; the at least two chips comprise a first chip and a second chip, which are adjacent; multiple first metal wires are distributed in the connection part; both two ends of each first metal wire are exposed on the first surface of the connection part; one end of each first metal wire is connected with one first bonding pad of the first chip; the other end of each first metal wire is connected with one first bonding pad of the second chip; each second bonding pad of the first chip and the second chip is connected with the upper surface of the substrate through a second welding ball; and the upper surface of the substrate is towards the active surface of the chip. By means of the chip encapsulation structure and the circuit structure provided by the invention, the chip encapsulation efficiency is increased.
Owner:HUAWEI TECH CO LTD
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