GaN-based LED (Light-Emitting Diode) vertical chip structure and preparation method

Abstract

The invention provides a GaN-based LED vertical chip structure and a preparation method, the structure comprising: a bonding substrate; a P pad; an inverted pyramid-shaped light-emitting epitaxial structure with inclined side walls, including sequentially stacked P-GaN layers, quantum A well layer and an N-GaN layer, the surface of the N-GaN layer is formed with a roughened structure; a transparent insulating layer is formed on the surface of the inclined side wall; a reflective layer is formed on the surface of the transparent insulating layer; and an N pad. In the present invention, the side wall of the light-emitting epitaxial structure is made into an inverted pyramid, and coated with a reflective layer, which can effectively improve the existing LED vertical chip with a positive pyramid-shaped side wall and almost completely limit the light rays whose exit angle is greater than the critical angle of total reflection. defects inside the device, and transmit more of the light that strikes the sidewall over a shorter distance. The vertical chip side wall structure of the present invention increases the light extraction efficiency and is more conducive to light output. At the same time, the insulating material is used to protect the side wall, effectively avoiding chip leakage caused in the manufacturing process, and improving chip reliability.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a GaN-based LED vertical chip structure and a preparation method. Background technique [0002] In terms of the structure of LEDs, GaN-based LEDs can be divided into front-mounted structures, flip-chip structures, and vertical structures. There are two obvious disadvantages of the front-mounted structure LED. First, the p- and n-electrodes of the front-mounted LED are on the same side of the LED. The thermal conductivity of the sapphire substrate is poor, which seriously hinders the dissipation of heat. In order to solve the heat dissipation problem, the American Lumileds Lighting Company invented flip chip (Flipchip) technology. further increase the driving current. [0003] Compared with the traditional GaN-based LED front-mounted structure, the vertical structure has the advantages of good heat dissipation, high current carrying capacity, high luminous intensity, low p...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a GaN-based LED vertical c

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