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Flexible graphene/silicon solar cell preparation method

A technology of silicon solar cells and flexible graphite, applied in the field of solar cells, to achieve the effect of improving absorption and improving separation

Active Publication Date: 2018-03-30
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, how to improve its optical and electrical properties through reasonable structural design, so as to achieve stable and reliable high efficiency of flexible graphene-silicon devices is the main challenge at present.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0024] Embodiment 1: the preparation method of flexible graphene silicon solar cell of the present invention, concrete operation is as follows:

[0025] Divide the area into 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 10 minutes in sequence, and the cleaned silicon wafers were soaked in a KOH solution with a mass fraction of 45% for 4 hours at a temperature of 60°C. After etching, the silicon wafers The thickness of the wafer is about 30 microns; leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, and seal the rest of the upper surface except the window, and then place the processed silicon wafer in a 1% Soak in HF acid solution for 60 minutes to remove the oxide layer on the surface of the window and the back of the silicon wafer;

[0026] Place the flexible silicon wafer on HF-Cu(NO 3 ) 2 -H 2 o 2 In the etching solution, the concentration of HF in the etching s...

Embodiment 2

[0031]Embodiment 2: the preparation method of flexible graphene silicon solar cell of the present invention, concrete operation is as follows:

[0032] Divide the area into 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 15 minutes in turn, and the cleaned silicon wafers were soaked in 20% KOH solution for 3 hours at a temperature of 40°C. After etching, the silicon wafers The thickness is about 80 microns; leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, and seal the rest of the upper surface except the window, and place the treated silicon wafer in 40% HF acid Soak in the solution for 1min to remove the oxide layer on the back of the silicon wafer;

[0033] Place the flexible silicon wafer on HF-Cu(NO 3 ) 2 -H 2 o 2 In the etching solution, the concentration of HF in the etching solution is 0.1mol / L, Cu(NO 3 ) 2 The concentration is 0.01mol / L, H 2 o 2 The con...

Embodiment 3

[0034] Embodiment 3: the preparation method of flexible graphene silicon solar cell of the present invention, concrete operation is as follows:

[0035] Divide the area into 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 15 minutes in turn, and the cleaned silicon wafers were soaked in 90% NaOH solution for 0.2 hours at a temperature of 60°C. After etching, the silicon wafers The thickness is about 20 microns; leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, and seal the rest of the upper surface except the window, and place the treated silicon wafer in 5% HF acid Soak in the solution for 10 minutes to remove the oxide layer on the window surface and the back of the silicon wafer;

[0036] Place the flexible silicon wafer on HF-Cu(NO 3 ) 2 -H 2 o 2 In the etching solution, the concentration of HF in the etching solution is 4.6mol / L, Cu(NO 3 ) 2 The concentration...

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Abstract

The invention discloses a flexible graphene / silicon solar cell preparation method. The method comprises the following steps: to begin with, preparing a flexible silicon wafer; then, carrying out sealing treatment on the flexible silicon wafer; introducing an inverted pyramid structure onto the surface of the flexible silicon wafer; carrying out passivation on the surface of the silicon wafer through a chemical passivation or / and field passivation method; realizing modification of graphene quantum dots on the surface of the silicon wafer through a spin-coating method; introducing a conductivelayer and transferring sheet graphene; and finally, carrying out electrode access, and thus finishing preparation of the flexible graphene / silicon solar cell. The method prepares ultra-thin flexible silicon, and allows the silicon to bend and reduces consumption of silicon amount; a large-scaleinverted pyramid array is introduced onto the surface of the ultrathin silicon substrate through low-costchemical etching and metal copper catalytic chemical etching techniques, thereby increasing silicon substrate spectrum absorption rate and reducing the surface area of the silicon; and the graphene and the quantum dot layer are introduced to the graphene and ultrathin silicon interface, so that a coating antireflection and electron blocking layer function is achieved, the cell is allowed to be more efficient, and the method is wider in application prospect.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for preparing a flexible graphene-silicon solar cell. Background technique [0002] In recent years, solar energy has attracted the attention of countries all over the world because of its advantages such as unlimited reserves, no geographical restrictions, clean and pollution-free. Solar cells are the core components of photovoltaic power generation. With the advantages of abundant reserves, suitable energy band structure, excellent reliability and mature manufacturing process, silicon materials firmly occupy the main market of commercial solar cell materials (accounting for more than 90% %). However, traditional silicon-based solar cells have problems such as large amount of silicon, complex preparation process, and high equipment cost, so that the current cost of solar cell power generation is still high. In addition, traditional silicon-based In an environmen...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 李绍元马文会邹宇新魏奎先杨春曦雷云谢克强伍继君于洁秦博吕国强杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH
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