Transition metallic oxide-silicon heterojunction solar cell and preparation method thereof

A solar cell, transition metal technology, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effect of improving separation and transmission efficiency, enhancing stability, and improving absorption

Active Publication Date: 2015-10-21
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to reduce the manufacturing cost of silicon solar cells and reduce the problem of poor stability caused by the introduc...

Method used

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  • Transition metallic oxide-silicon heterojunction solar cell and preparation method thereof
  • Transition metallic oxide-silicon heterojunction solar cell and preparation method thereof
  • Transition metallic oxide-silicon heterojunction solar cell and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Prepare a transition metal oxide-silicon heterojunction solar cell according to the following steps:

[0042] (1) Use commercialized double-sided polishing, N-type monocrystalline silicon wafers with a resistivity of 1-10 ohms per centimeter and a crystal orientation of 100; clean the silicon wafers with RCA standard cleaning method, and then dry them with nitrogen. Obtain an N-type silicon substrate;

[0043] Put the N-type silicon substrate into a mixed aqueous solution with a mass fraction of 2% NaOH and a mass fraction of 10% absolute ethanol, etch at 80°C for 30 minutes; then take it out and soak it in dilute hydrochloric acid for 10 minutes to remove the residual Alkaline solution, then rinse with deionized water to obtain an N-type silicon substrate with a silicon pyramid array on the upper surface and an inverted silicon pyramid array on the lower surface; the scanning electron microscope of the silicon pyramid array is as follows figure 2 shown, from figure...

Embodiment 2

[0050] Prepare a transition metal oxide-silicon heterojunction solar cell according to the following steps:

[0051] (1) Use commercialized double-sided polishing, N-type monocrystalline silicon wafers with a resistivity of 1-10 ohms per centimeter and a crystal orientation of 100; clean the silicon wafers with RCA standard cleaning method, and then dry them with nitrogen. Obtain an N-type silicon substrate;

[0052] Put the cleaned silicon chip into a mixed aqueous solution of 2% NaOH and 10% absolute ethanol, etch at 80°C for 30 minutes; then take it out and soak it in dilute hydrochloric acid for 10 minutes to remove The residual alkali solution is rinsed with deionized water to obtain an N-type silicon substrate with a silicon pyramid array on the upper surface and an inverted silicon pyramid array on the lower surface; as can be seen from the scanning electron microscope diagram of the silicon pyramid array, The silicon pyramid array grown with anisotropy has a good arra...

Embodiment 3

[0058] Prepare a transition metal oxide-silicon heterojunction solar cell according to the following steps:

[0059] (1) Use commercialized double-sided polishing, N-type monocrystalline silicon wafers with a resistivity of 1-10 ohms per centimeter and a crystal orientation of 100; clean the silicon wafers with RCA standard cleaning method, and then dry them with nitrogen. Obtain an N-type silicon substrate;

[0060] Put the cleaned silicon chip into a mixed aqueous solution of 2% NaOH and 10% absolute ethanol, etch at 80°C for 30 minutes; then take it out and soak it in dilute hydrochloric acid for 10 minutes to remove The residual alkali solution is rinsed with deionized water to obtain an N-type silicon substrate with a silicon pyramid array on the upper surface and an inverted silicon pyramid array on the lower surface; as can be seen from the scanning electron microscope diagram of the silicon pyramid array, The silicon pyramid array grown with anisotropy has a good arra...

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Abstract

The invention discloses a transition metallic oxide-silicon heterojunction solar cell and a preparation method thereof. The solar cell comprises a metal back electrode, a silicon inverted pyramid array, an N-type silicon substrate, a silicon pyramid array, a hole transport layer and a positive electrode. The hole transport layer is a transition metallic oxide thin film. According to the invention, by using the transition metallic oxide thin film as the hole transport layer, so on one hand, compared with the P-type conjugated organic matters, stability of the solar cell is improved and technical requirements on encapsulation are reduced, thereby reducing manufacturing cost; and on the other hand, compared with a traditional silicon solar cell, technology of high-temperature phosphorus diffusion and diffusion layer removing are not required, so technology is simplified, and manufacturing cost is reduced. In addition, methylation processing is performed on surface of the silicon substrate, so performance of a device is improved and stability in air of the device is also improved.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, and in particular relates to a transition metal oxide-silicon heterojunction solar cell and a preparation method thereof. Background technique [0002] The first-generation monocrystalline silicon solar cells are widely used in daily life due to their higher conversion efficiency and stability compared with other solar cells. But on the one hand, as an indirect bandgap semiconductor material, silicon has a small absorption coefficient, and silicon wafers larger than 200 microns are needed to better absorb light. On the other hand, high-purity silicon wafers must be required to manufacture devices with high conversion efficiency. Moreover, the manufacturing process of solar cells is complicated, and the energy consumption is also very large during the manufacturing process. How to reduce the impact of these factors and reduce costs has become the focus of attention. [0003] In o...

Claims

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Application Information

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IPC IPC(8): H01L31/074H01L31/032H01L31/0236H01L31/18
CPCH01L31/02363H01L31/032H01L31/074H01L31/1804H01L31/186Y02E10/547Y02P70/50
Inventor 谢伟广梁智敏苏明泽
Owner JINAN UNIVERSITY
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