33results about How to "Reduced packaging requirements" patented technology

The invention provides a capacitive micromachined tuning fork gyroscope. The gyroscope is the symmetrical dual-mass structural gyroscope, comprising a substrate and a framework arranged in the centre of the substrate, wherein the middle of the framework is provided with a framework beam perpendicular to the framework; two detection mass blocks are symmetrically arranged in the framework with the framework beam as a symmetry axis, and four corners of each detection mass block are connected with the framework and the framework beam through at least four drive beams; decoupling drive comb capacitors are respectively arranged at both ends of each detection mass block in the direction of a vertical axis; detection comb capacitors are symmetrically arranged on both outer sides of the framework in the direction of a horizontal axis; at least four detection beams are arranged on both outer sides of the framework in the direction of the vertical axis; and the detection beams are distributed symmetrically relative to the vertical axis and the horizontal axis and are fixed on the substrate through corresponding anchor points. According to the capacitive horizontal-axis micromachined tuning fork gyroscope provided by the invention, the mechanical coupling between the detection mode and the driving mode of the micromachined tuning fork gyroscope can be solved easily and effectively.

A radio frequency (“RF”) harmonic filter circuit as disclosed herein is fabricated using integrated passive device (“IPD”) technology. The RF harmonic filter circuit is configured to provide second, third, and fourth harmonic rejection while providing good input and output impedance matching. The RF harmonic filter circuit employs only one IPD loop inductance (preferably used for a second harmonic resonance circuit), which results in a significant die/package size reduction. The RF harmonic filter circuit also employs a combined circuit that performs input and/or output impedance matching and third harmonic rejection.

The invention discloses a nanometer luminescent fiber and a preparation method thereof. The method comprises the steps that quantum dots are taken to be added into an organic solvent, stirring dissolution is performed to obtain a quantum dot solution; a solution additive is added into the quantum dot solution, mixing is performed to be uniform, then, solid polymer is added, stirring dissolution is performed to obtain an uniform quantum dot spinning solution; the quantum dot spinning solution is placed into a jet apparatus device of electrostatic spinning equipment for performing electrostatic spinning, and nanometer luminescent fiber is obtained. The method is simple, controllable and easy to repeat, the oil soluble quantum dot solution of any kind can be adopted for spinning, in the electrostatic spinning process, and the nanometer luminescent fiber of different shapes such as solid nanometer fiber, tubular nanometer fiber and strap nanometer fiber is obtained by adjusting the conditions such as the mass percentage of the components in the electrostatic spinning solution, electrostatic spinning voltage, the solution injection rate, the solution injection distance and the spun nanometer luminescent fiber drying temperature.

A composite electrode for use in an all-solid-state electrochemical cell that cycles lithium ions is provided. The composite electrode comprises a solid-state electroactive material that undergoes volumetric expansion and contraction during cycling of the electrochemical cell and a solid-state electrolyte. The solid-state electroactive material is in the form of a plurality of particles and each particle has a plurality of internal pores formed therewithin. Each particle has an average porosity ranging from about 10% to about 75%, and the composite electrode has an interparticle porosity between the solid-state electroactive material and solid-state electrolyte particles ranging from about 5% to about 40%. The intraparticle pores and the interparticle porosity accommodate the volumetric expansion and contraction of the solid-state electroactive material so to minimize outward expansion of the electroactive particles, micro-cracking of the solid-state electrolyte, and delamination within the electrochemical cell.

The invention discloses a solar battery based on a silicon nano material. The solar battery based on the silicon nano material comprises a silicon wafer on which conductive glass is arranged; an insulation sealing layer is encircled between the conductive glass and the silicon wafer; an electrolyte chamber is formed between the conductive glass and the silicon wafer; ion liquid electrolyte is arranged in the electrolyte chamber; and lead-out electrodes are arranged on the backs of the conductive glass and the silicon wafer so as to form an ohm electrode structure. The solar battery has the characteristics of high thermal stability and chemical stability; a thinner silicon wafer can be used as a silicon electrode, the requirement for purity of the silicon is relatively low and the encapsulation requirement on the battery is reduced greatly at the same time. The invention also provides a low-cost, high-efficiency and stable technology for preparing the solar battery, which has a positive practical significance.

The invention discloses an intelligent recognition, counting, and detection algorithm for a quasi-circle object facing a packaging industry. According to images collected by an industrial camera, effective regions where quasi-circle objects are located are obtained. An image pretreatment method includes: removing original image noises by using a median filtering algorithm and obtaining binary images after image denoising by using an adaptive local binary algorithm. Geometric feature extraction is carried out by detection for four times; to be specific, quasi-circle objects with normal areas after binaryzation are detected for first detection; the rest of quasi-circle objects with defects are detected after first detection during the second detection process; quasi-circle objects at an uneven region are detected during the third detection process; and quasi-circle objects may existing at a detection boundary are detected during the fourth detection process. Therefore, the counting accuracy of quasi-circle three-dimensional objects is improved; and the packaging requirement is low and the detection robustness is high. Meanwhile, real-time, rapid, on-line monitoring can be realized. The algorithm is applied to detection of various quasi-circle objects.

The invention relates to the field of sodium-ion batteries and discloses a perfluoro sodium polymer electrolyte, a preparation method and an application of the perfluoro sodium polymer electrolyte, anall-solid-state sodium-ion battery and a friction nano-generator system; the preparation method of the perfluoro sodium polymer electrolyte comprises implementing ion exchange between perfluorinatedsulfonic acid resin and a Na+ containing solution. The provided all-solid-state sodium-ion battery comprises the above perfluoro sodium polymer electrolyte, and in addition, compared with a battery using a liquid electrolyte, the all-solid-state sodium-ion battery is excellent in safety and the energy density is higher.

The invention relates to a thermoelectric component device with a wrapping body structure, comprising: a first thermoelectric material; and a second thermoelectric material that wraps the first thermoelectric material; wherein the first thermoelectric material is one of a P-type thermoelectric material or an N-type thermoelectric material, and the second thermoelectric material is the other of theP-type thermoelectric material or the N-type thermoelectric material, and the sublimation stability or oxidation resistance of the second thermoelectric material at a high temperature in the range ofoperating temperature thereof is greater than that of the first thermoelectric material.

The invention discloses an automatic weighing, sealing and seaming device for a wire and cable material, and belongs to the technical field of packaging machinery for plastic particles for the wires and cables. The automatic weighing, sealing and seaming device comprises a weighing device supported on the terrace under a used state, a sealing device, a seaming device and a packaging bag supporting device, and is characterized in that the weighing device, the sealing device and the seaming device are arrayed on the same straight line in an arranging manner of left to right; the packaging bag supporting device is supported on a terrace of the use place at the position simultaneously corresponding to the lower parts of the front sides of weighing device, the sealing device and the seaming device. The automatic weighing, sealing and seaming device achieves a good coherence effect; the space is saved, and the adaptability to a packaging place is improved; the labor investment is reduced; furthermore, the sealing efficiency is improved; the labor intensity of an on-line worker is relieved, and the labor cost is reduced so as to save precious labor resources; the sealing quality is guaranteed; the packaging bag can be sealed under a vertical state; the automatic weighing, sealing and seaming device has an effect of preventing the wire and cable material in the bag from leaking from the bag opening.

The invention discloses a neutron absorber material and a preparation method thereof. The preparation method comprises the following steps: S1, preparing 30-90 parts by weight of an europium oxide rawmaterial and 10-70 parts by weight of a hafnium oxide raw material into slurry, and grinding solid particles in the slurry to be below a submicron level; s2, drying the prepared slurry below the submicron level, and then crushing and sieving the slurry to obtain powder particles with required particle sizes; s3, pressing the sieved powder particles into a biscuit; and S4, carrying out high-temperature sintering on the biscuit to obtain the neutron absorber. The invention further discloses a control rod, and an absorber of the control rod adopts a neutron absorbing material. The method is simple in process, and the prepared neutron absorbing material and the control rod are small in irradiation swelling, small in irradiation creep and long in service life.

The invention belongs to the field of electronic technology and discloses a high-speed transistor and a manufacturing method thereof. The high-speed transistor comprises a substrate laye; a channel layer disposed on the upper surface of the substrate layer; a first undoped (AlxGa1-x) 2O3 layer disposed on the upper surface of the channel layer; a highly doped (AlxGa1-x) 2O3 layer disposed on the upper surface of the first undoped (AlxGa1-x) 2O3 layer; a voltage modulation layer disposed on the upper surface of the highly doped (AlxGa1-x) 2O3 layer; a source electrode and a drain electrode spaced apart on an upper surface of the voltage modulation layer; and a gate electrode disposed on the upper surface of the voltage modulation layer and located in a region between the source electrode and the drain electrode; As that novel high-speed and high-power transistor are fabricated by the ultra-wide band-gap semiconductor material system and the high-doping (AlxGa1-x) 2-D heterojunction electron gas is formed by the modulation of 2O 3 layer, which effectively improves the frequency and power performance of the device, improves the breakdown voltage of the device material, reduces the requirement of device packaging, and increases the market competitiveness of the device.

The invention provides a gate-turn-off thyristor. A plurality of strips formed by repeatedly arraying a plurality of high-doping-concentration upper tube N type emission regions are arranged on an upper surface of an N type silicon substrate chip; an upper tube P-type concentrated basic region bus bar is arranged around the periphery of each strip; a cathode metal layer is arranged on the upper surface of one upper tube N type emission region, an upper tube P-type basic region is arranged below the upper tube N type emission region, and a side face of the upper tube P-type basic region is connected with an upper tube P-type concentrated basic region or the upper tube P-type concentrated basic region bus bar; an upper tube N-type current collection region is arranged below the upper tube P-type basic region, the upper tube P-type concentrated basic region and the upper tube P-type concentrated basic region bus bar; a lower tube P-type emission region is arranged below the upper tube N-type current collection region; a lower surface of the lower tube P-type emission region is connected with an anode metal layer; a gate metal layer is arranged above the silicon substrate chip. According to the gate-turn-off thyristor provided by the invention, anti-dI/dt ad anti-dV/dt capabilities of turn-off thyristor are remarkably enhanced, and breakdown voltage and a current capacity have a wide application range.

The invention discloses a neutron absorber material and a preparation method thereof. The preparation method comprises the steps: S1, processing raw materials including, by weight, 30-90 parts of samarium oxide raw materials and 10-70 parts into slurry, and grinding the slurry until the solid particles reaches submicron level or below; S2, drying, crushing and sieving the prepared slurry of whichthe particle size is less than submicron to obtain powder particles of which the particle size is required; S3, pressing the sieved powder particles into a biscuit; and S4, sintering the biscuit at high temperature to obtain the neutron absorber. The invention also discloses a control rod, and an absorber of the control rod adopts the neutron absorbing material. The method is simple in process, and prepared neutron absorber material and the control rod are small in irradiation swelling, small in irradiation creep and long in service life.

The invention provides a GaN-based laser diode structure and a manufacturing method. The GaN-based laser diode structure comprises an N electrode, an n-type GaN substrate, an N covering layer, an N waveguide layer, a light-emitting active layer, a P waveguide layer, an electron blocking layer and a passivation layer which are sequentially arranged in a stacked mode. A ridge strip is arranged on the upper surface of the P-type electron barrier layer and comprises a P covering layer, and a P contact layer and a P contact electrode layer which are sequentially stacked on the P covering layer; the passivation layer comprises a first passivation layer and a second passivation layer which are arranged in a stacked mode, the first passivation layer is arranged on the upper surface of the P-type electron blocking layer and located on the two sides of the ridge strip, a groove is formed in the second passivation layer, a first metal layer is arranged on the upper surface of the second passivation layer and on the ridge strip, the first metal layer is provided with a protruding part corresponding to the groove, and a second metal layer is arranged on the protruding part. And a P electrode is arranged on the upper surface of the first metal layer. The stress of the electrode structure is reduced, the adhesive force between the metal electrode and the passivation layer is improved, a thick metal electrode can be formed, the packaging requirement is reduced, the heat dissipation performance is improved, and application is expanded.