GaN-based laser diode structure and manufacturing method

Abstract

The invention provides a GaN-based laser diode structure and a manufacturing method. The GaN-based laser diode structure comprises an N electrode, an n-type GaN substrate, an N covering layer, an N waveguide layer, a light-emitting active layer, a P waveguide layer, an electron blocking layer and a passivation layer which are sequentially arranged in a stacked mode. A ridge strip is arranged on the upper surface of the P-type electron barrier layer and comprises a P covering layer, and a P contact layer and a P contact electrode layer which are sequentially stacked on the P covering layer; the passivation layer comprises a first passivation layer and a second passivation layer which are arranged in a stacked mode, the first passivation layer is arranged on the upper surface of the P-type electron blocking layer and located on the two sides of the ridge strip, a groove is formed in the second passivation layer, a first metal layer is arranged on the upper surface of the second passivation layer and on the ridge strip, the first metal layer is provided with a protruding part corresponding to the groove, and a second metal layer is arranged on the protruding part. And a P electrode is arranged on the upper surface of the first metal layer. The stress of the electrode structure is reduced, the adhesive force between the metal electrode and the passivation layer is improved, a thick metal electrode can be formed, the packaging requirement is reduced, the heat dissipation performance is improved, and application is expanded.

Description

technical field [0001] The present invention relates to the technical field of GaN-based laser diodes, in particular to a GaN-based laser diode structure and a manufacturing method. Background technique [0002] For edge-emitting laser diodes, in order to form a good ridge waveguide structure, the side of the ridge is covered with an optical insulating layer of SiO 2 , can form an optical confinement, allowing the current to be injected from the ridge to form a high current density and reach the laser threshold; because the contact area of ​​the ridge is very small, the metal electrode and SiO 2 The adhesion of the high-power laser diode is poor, and the thick metal electrode has a large stress and is easy to fall off; therefore, the metal electrode of the high-power laser diode adopts a thin structure, which indirectly causes many problems in packaging, such as poor heat dissipation. SUMMARY OF THE INVENTION [0003] Based on this, the purpose of the present invention is...

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Problems solved by technology

[0002] Edge-emitting laser diode, in order to form a good ridge waveguide structure, the side of the ridge is covered with an optical insulating layer SiO 2 , can form optical confinement, allowing current to be injected from the ridge to form a high current density, reaching the laser threshold; because the contact area of ​​the ridge is small, the metal electrode and SiO 2 The adhesion of the laser diode is poor, and the thick metal electrode has a large stress and is easy to fall off; so the metal electrode of the high-power laser diode adopts a thin structure, which indirectly causes many problems in the packaging, such as poor heat dissipation, etc.

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