A high-speed transistor and a manufacturing method thereof

Abstract

The invention belongs to the field of electronic technology and discloses a high-speed transistor and a manufacturing method thereof. The high-speed transistor comprises a substrate laye; a channel layer disposed on the upper surface of the substrate layer; a first undoped (AlxGa1-x) 2O3 layer disposed on the upper surface of the channel layer; a highly doped (AlxGa1-x) 2O3 layer disposed on the upper surface of the first undoped (AlxGa1-x) 2O3 layer; a voltage modulation layer disposed on the upper surface of the highly doped (AlxGa1-x) 2O3 layer; a source electrode and a drain electrode spaced apart on an upper surface of the voltage modulation layer; and a gate electrode disposed on the upper surface of the voltage modulation layer and located in a region between the source electrode and the drain electrode; As that novel high-speed and high-power transistor are fabricated by the ultra-wide band-gap semiconductor material system and the high-doping (AlxGa1-x) 2-D heterojunction electron gas is formed by the modulation of 2O 3 layer, which effectively improves the frequency and power performance of the device, improves the breakdown voltage of the device material, reduces the requirement of device packaging, and increases the market competitiveness of the device.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to a high-speed transistor and a manufacturing method thereof. Background technique [0002] A high-speed transistor on the conventional market has a driving unit having an active layer formed in a structure in which a first oxide semiconductor layer and a second oxide semiconductor layer are stacked, wherein the first oxide semiconductor layer is selected from indium tin oxide , the second oxide semiconductor layer is selected from zinc oxide. Due to the small bandgap width of indium tin oxide and zinc oxide, the breakdown voltage of the device material itself is small, and the frequency performance and power performance are poor, resulting in poor stability of high-speed transistors. [0003] Traditional high-speed transistors have the defect that the bandgap of indium tin oxide and zinc oxide is small, which leads to poor stability of high-speed transistors. Co...

AI Technical Summary

Problems solved by technology

[0004] The invention provides a high-speed transistor and its manufacturing method, aiming to solve the problem of poor stability of the high-speed transistor caused by the small band gap of indium tin oxide and zinc oxide in the traditional high-speed transistor

Images