The invention relates to a method for preparing high-temperature resistant silicon carbide. The method is technically characterized by comprising the following steps of: uniformly mixing liquid polycarbosilane and organic metal salt, crosslinking and curing, performing ball-milling, cracking at the temperature of between 900 and 1,100 DEG C, and performing high-heat treatment at the temperature of between 1,600 and 1,850 DEG C to obtain the crystalline silicon carbide containing a trace amount of metal elements. A SiO2 protection membrane which is obtained by performing high-temperature oxidation on the synthesized silicon carbide is SiO2 solid solution containing a trace amount of metal elements. The trace amount of metal elements reduces the activity of SiO2, and increases the conversion temperature of active and passive oxidation of the silicon carbide, so that the use temperature of the silicon carbide is increased. Compared with the prior art, the method has the advantages that: by introducing a trace amount of metal elements into the silicon carbide, the use temperature of the silicon carbide is increased from 1,700 to 1,800-1,850 DEG C, and equipment used by the preparationprocess is simple, safe and reliable, is easy to control and contributes to large-scale production.