The invention relates to a method for preparing high-temperature resistant
silicon carbide. The method is technically characterized by comprising the following steps of: uniformly mixing liquid polycarbosilane and organic
metal salt, crosslinking and curing, performing ball-milling,
cracking at the temperature of between 900 and 1,100 DEG C, and performing high-heat treatment at the temperature of between 1,600 and 1,850 DEG C to obtain the
crystalline silicon carbide containing a trace amount of
metal elements. A SiO2 protection membrane which is obtained by performing high-temperature oxidation on the synthesized
silicon carbide is SiO2
solid solution containing a trace amount of
metal elements. The trace amount of metal elements reduces the activity of SiO2, and increases the conversion temperature of active and passive oxidation of the
silicon carbide, so that the use temperature of the
silicon carbide is increased. Compared with the prior art, the method has the advantages that: by introducing a trace amount of metal elements into the
silicon carbide, the use temperature of the
silicon carbide is increased from 1,700 to 1,800-1,850 DEG C, and equipment used by the preparationprocess is simple, safe and reliable, is easy to control and contributes to large-scale production.