59 results about "Silver-palladium alloy" patented technology

The invention discloses a zinc oxide piezoresistor material which comprises a main material and an additive, wherein the main material comprises 92-97mol% of ZnO; and the additive comprises 0.5-1.5mol% of Bi2O3, 0.1-1.2mol% of Cr2O3, 0.1-1.5mol% of MnCO3, 0.1-1.0mol% of BaCO3, 0.1-1.5mol% of Co3O4, 0.1-1.2mol% of SnO2, 0.1-1.0mol% of SrCO3, 0.1-1.0mol% of V2O5, 0.1-1mol% of H3BO3, and 0.005-0.1mol% of Al2(NO3)3.9H2O. When the zinc oxide piezoresistor material is adopted for preparing a finished product, the sintering temperature can be reduced to 900-940 DEG C while various excellent properties are ensured; when the zinc oxide piezoresistor material is adopted for preparing a sheet zinc oxide piezoresistor, a silver palladium alloy with a silver mass fraction greater than or equal to 85% can be matched as an inner electrode or pure silver can serve as the inner electrode; and the cost is lowered greatly.

The invention provides a composite wire for electronic package, the composite wire including an alloy core member and a plating layer forming on a surface of the alloy core member. The alloy core member is silver-palladium alloy. The plating layer is at least one layer of thin film of pure gold, pure palladium or gold-palladium alloy. The invention also provides a method for manufacturing the composite wire. The method includes steps of: (a) providing a wire rod, (b) forming a wire having a predetermined diameter from the wire rod by a plurality of processes including cold working and annealing and (c) forming a plating layer on a surface of the wire rod before step (b) or forming a plating layer on a surface of the wire after step (b) by electroplating, sputtering or vacuum evaporation.

The invention discloses a metal substrate based sintering temperature adjustable thick film circuit resistor paste and the preparation process thereof. The metal substrate based sintering temperature adjustable thick film circuit resistor paste is formed by a functional phase and an organic carrier; the ratio of the functional phase and the organic carrier is 70 to 80 to 20 to 30; the functional phase is mainly formed by, by weight, 25 to 50% of silver palladium alloy powder and 50 to 75% of microcrystalline glass powder. The preparation process comprises the preparation of the microcrystalline glass powder, the match of microcrystalline glass, the boiling of the organic solvent carrier and the integrated preparation of the resistor paste. According to the metal substrate based sintering temperature adjustable thick film circuit resistor paste, the square resistance is as low as 50 to 100 milliohms every meter, the temperature coefficient is small, the controllability is good, the sintering temperature can be adjusted to 550 to 850 DEG C, the electrical property is good, and the wetting property with and the compatibility to a medium paste and a conductor paste is excellent. The metal substrate based sintering temperature adjustable thick film circuit resistor paste and the preparation process thereof are suitable for ferrite series of stainless steel substrates.

The invention provides nickel-copper conductive paste which comprises the following components in percent by weight: 50 to 80% (wt) of nickel-copper mixed powder, 2 to 5% (wt) of glass powder, 3 to 10% (wt) of inorganic packing powder and 15 to 35% (wt) of organic carrier, wherein the total percentage of all the components is 100%. Compared with the pure copper conductive paste, the nickel-copper conductive paste has ensures that adhesive force of a nickel-copper conductive film generated by the nickel-copper conductive paste is increased; compared with the pure nickel conductive paste, the nickel-copper conductive paste ensures that the nickel-copper conductive film generated by the nickel-copper conductor paste has weldability; and a mixture of cheap metallic nickel and copper is used for replacing noble metal silver or silver-palladium alloy to serve as an electrode of the electronic element, thus the nickel-copper conductive paste has obvious advantages in economic aspects.

The invention discloses a tri-metal nano particle with an asymmetric structure, a preparation method and application thereof. The preparation method comprises the steps: utilizing a golden rod as a seed and a silver nitrate solution as a metal precursor, utilizing a seed growing method to prepare rod-like template nano particles with core-shell structures and with silver coated outside the golden rod, centrifugally dispersing the particles in ultrapure water; utilizing a modified electric displacement reaction and a common reduction reaction, adding chloropalladic acid to the obtained aqueous solution containing template nano particles, utilizing ascorbic acid as a reducing agent and standing at room temperature; adjusting the molar ratio of silver nitrate and chloropalladic acid and the amount of surfactant and ascorbic acid, and obtaining dandelion-shaped nano particles under the action of Oswald ripening effect, wherein the brace is of a golden rod structure; one end of the golden rod is coated with spherical silver-palladium alloy with a branch-like structure and the other end is a pure golden rod. In the organic reaction using palladium as a catalyst, the palladium can be used as the catalyst with good activity and can be used as the tracking and detection for Raman spectrum signals.

The invention discloses a method for welding an LED chip to a ceramic body through ultrasonic waves at a normal temperature. The method includes the steps of conducting screen printing on the ceramic body through silver palladium alloy slurry by means of a template, sending the ceramic body into a ceramic sintering furnace to be sintered at a high temperature so that a welding disc circuit formed by the silver palladium alloy slurry can be tightly combined with the ceramic body, welding a welding disc on the ceramic body to an electrode of the LED chip through the ultrasonic waves by means of alloy wires or gold wires so that current of a power supply can flow into the LED chip from the welding disc of the ceramic body through the alloy wires or the gold wires and enable the LED chip to work. Due to the fact that high-temperature tin soldering at the temperature of 200 DEG C or higher such as reflow soldering is avoided, the LED chip is protected, the service life of the LED chip is greatly prolonged, supports, printing plates and other materials are reduced, the processes such as the support arranging process, the reflow soldering process and the circuit printing process are reduced, and high practical value is achieved.

Provided are a gold-silver-palladium alloy single-crystal bonding wire and a manufacturing method thereof. The main material of the gold-silver-palladium alloy single-crystal bonding wire is high-purity silver, and the gold-silver-palladium alloy single-crystal bonding wire further comprises gold, palladium, europium, lanthanum and other trace metal materials. The gold-silver-palladium alloy single-crystal bonding wire comprises, by weight, 98.713%-99.157% of the silver, 0.8%-1.2% of the gold, 0.04%-0.08% of the palladium, 0.002%-0.004% of the europium and 0.001%-0.003% of the lanthanum. The manufacturing method comprises the steps that the high-purity silver with the purity higher than 99.9999% is extracted and manufactured into silver alloy ingots, as-cast gold-silver-palladium alloy single-crystal main wires are manufactured, the single-crystal main wires are manufactured into single-crystal wires of around 1mm through a drawing mode, heat treatment is carried out on the single-crystal wires, and then gold-silver-palladium alloy single-crystal bonding wires of different specifications are manufactured through precise drawing, heat treatment and cleaning.

The invention provides a gold-plating gold and silver palladium alloy single-crystal bonding filament and a manufacturing method thereof. The bonding filament is mainly made of high-purity silver and comprises metal, palladium, europium, lanthanum and other trace metal materials. The bonding filament comprises, by weight, 97.713%-98.157% of silver, 1.8%-2.2% of gold, 0.04%-0.08% of palladium, 0.002%-0.004% of europium and 0.001%-0.003% of lanthanum. The manufacturing method of the gold-plating gold and silver palladium alloy single-crystal bonding filament comprises the steps that high-purity silver with the purity larger than 99.9999% is extracted, a silver alloy ingot is manufactured, a cast-condition gold and silver palladium alloy single-crystal bus is manufactured, the single-crystal bus is pulled to be a single-crystal filament which is about 1mm long, after thermal processing, a pure-gold protection layer is electroplated on the surface of the single-crystal filament, and gold-plating gold and silver palladium alloy single-crystal bonding filament of different specifications are manufactured after precise pulling, thermal processing and washing.

The invention provides a gold-plated palladium-silver alloy single crystal bonding wire and a manufacturing method thereof and relates to a metal bonding wire for a micro-electronic later packaging process and a manufacturing method thereof. Components of a material for the bonding wire include gold, palladium, copper, calcium, beryllium, europium, lanthanum and the balance silver, and the sum of the components is equal to 100%. The manufacturing method sequentially comprises the following steps of 1 extracting high-purity silver; 2 preparing a silver alloy ingot; 3 performing continuous casting to form a cast-condition palladium-silver alloy single crystal bus; 4 performing coarse drawing; 5 performing heat treatment; 6 plating gold on the surface; 7 performing finishing drawing; 8 performing heat treatment; 9 cleaning the surface; 10 performing shunt winding. The gold-plated palladium-silver alloy single crystal bonding wire has the advantages of a gold type bonding wire and the advantages of a silver based type bonding wire and is relatively low in price. The bonding wire is relatively low in price, excellent in electrical performance, good in oxidation resistance and stable and reliable in performance.

The invention discloses a bonding wire. The bonding wire comprises a bonding wire base body and three plating layers, wherein the bonding wire base body is coated with the three plating layers; the bonding wire base body is gold-silver-palladium alloy; the three plating layers comprise a gold plating layer, a palladium plating layer and a platinum plating layer from interior to exterior in sequence; and the platinum plating layer is the thickest among the three plating layers. The bonding wire provided by the invention adopts the three-plating-layer structure; the bonding wire is high in antioxidant performance and sulfidation resistance, and the problem of silver migration can be solved as well; the electronically packaged bonding wire is high in subsequent performance stability; and the bonding wire is low in preparation cost, so that the bonding wire can fully replace the gold wire.

The invention discloses a silver palladium alloy monocrystal bonding wire and a manufacturing method thereof. The materials forming the bonding wire are as follows, by weight, silver content is 99.9868%-99.9943%, palladium content is 0.003%-0.008%, copper content is 0.002%-0.004%, calcium content is 0.0001-0.0003%, and beryllium content is 0.0006%-0.0009%. The bonding wire has the advantages of being low in price, good in electrical properties, good in oxidation resistance properties, and stable and reliable in properties. The bonding wire can be used for bonding gold wires and gold-plating bonding copper wires in the fields of middle and low end light emitting diode (LED) package, semiconductor devices, and integrated circuit (IC) package in a replaced mode.

The laminated piezoelectric element having a thickness of 100 μm or less of the present invention comprises a laminate which comprises a plurality of piezoelectric ceramic layers 1, and electrodes 2,3 provided the surface and the inside of the laminate, wherein the electrode 2 comprises a silver-palladium alloy containing 71 to 99.9% by volume of silver and 0.1 to 29% by volume of palladium.

The present invention discloses a preparation method of a gas sensor for volatile organic matter detection. The preparation method specifically comprises: preparing a molybdenum disulfide loaded silver-palladium alloy nanometer composite material by using a one-pot method, and coating the obtained material on a gas sensitive element so as to prepare the aromatic hydrocarbon gas sensor. The prepared gas sensor of the present invention can achieve rapid and sensitive detection on the volatile organic matters.

The invention provides a method for preparing a high voltage-resisting chip type ceramic capacitor and relates to the technical field of electronic information materials and elements. The method comprises the procedures of dispersing of ceramic slurry, curtain coating of ceramic membranes, printing of inner electrode, staggered lamination, uniform pressing, cutting, plastic removal, sintering, chamfering, end coating and silver electrode firing, wherein a solvent for the ceramic slurry adopts methylbenzene and ethanol, during printing of inner electrode, the inner electrode is made of a silver palladium alloy which is sintered at a low temperature, during end coating, the end electrode is made of silver (Ag), particularly, during dispersing of ceramic slurry, ceramic powder adopts Ba-Ti-Nd based ceramic powder, particle sizes of the Ba-Ti-Nd based ceramic powder are within a range of 0.22-0.95mu m of spherical or approximately spherical bodies, and the solvent for the ceramic slurry adopts a mixture of the methylbenzene and the ethanol in a proportion of (1-2.5):1. By the aid of the method for preparing the high voltage-resisting chip type ceramic capacitor, the high-frequency high voltage-resisting chip type ceramic capacitor can be manufactured effectively, and simultaneously, the manufacturing cost can be reduced effectively.

The invention provides a manufacture method of a composite gold wire, comprising the steps of providing a main metal raw material containing a silver componnet; putting the main metal raw material in a vacuum melting furnace and carrying out mixing melting after adding a minor metal material containing a palladium component in the vacuum melting furnace and mixing to prepare a silver-palladium alloy melting liquid; then continuously casting and pulling and stretching the silver-palladium alloy melting liquid into a silver-palladium alloy wire rod; and at last, stretching the silver-palladium alloy wire rod into a silver-palladium alloy bonding wire with the preset wire diameter. The invention also provides the composite gold wire comprising the following ingredients in percentage by weight: 90.00-99.99 percent of silver and 0.01-10.00 percent of palladium. By dint of the silver-palladium alloy bonding wire prepared by mixing the two metal raw materials such as silver and palladium, the invention can not only achieve the effect of metal wire rods made of pure gold but also greatly reduce the cost.

Embodiments of the invention are directed towards a sliding liquid level sensor which is mounted in a fuel tank of a vehicle for detecting a remaining amount of a liquid fuel in the tank. The liquid level sensor has a float, a plurality of electrodes, and a sliding contact point configured to slide on the electrodes in accordance with a displacement of the float. The electrodes preferably contain 100 parts by weight of a silver-palladium alloy and preferably 3-20 parts by weight of glass. The silver-palladium alloy preferably contains 20-60% by weight of silver and preferably 80-40% by weight of palladium. The sliding contact point is made from a palladium-nickel alloy that preferably contains 70-90% by weight of palladium and preferably 30-10% by weight of nickel.

The invention relates to a lead wire for capsulation. The lead wire comprises a core wire and a plating layer, wherein the core wire is made of silver, silver-gold alloy, silver-copper alloy, silver-palladium alloy, copper, aluminum or alloy thereof; the plating layer is coated on the surface of the core wire; and the plating layer is made of gold, silver, palladium, platinum, ruthenium, nickel or alloy thereof. A manufacturing method of the lead wire comprises the following steps of: introducing the core wire to a reaction chamber to generate plasma for cleaning the surface of the core wire in the reaction chamber; and then coating the plating layer on the surface of the core wire. Because the surface of the core wire can be cleaned and activated fast and completely by the plasma, the plating layer can be firmly coated on the surface of the core wire and is not easy to fall off.

The invention belongs to the technical field of silver-palladium alloy and particularly relates to a metallographic phase corrosive agent suitable for silver-palladium copper alloy, and a preparation method and a use method thereof. The invention aims to solve the technical problem of providing the metallographic phase corrosive agent by which a precipitated phase in the metallographic phase in a metallographic structure of the silver-palladium copper alloy can be clearly and easily distinguished. In the technical scheme in the invention, the metallographic phase corrosive agent used in silver-palladium copper alloy is composed of following components, by volume, 5-15% of hydrofluoric acid being 40% in mass percentage concentration, 5-15% of nitric acid being 95-98% in mass percentage concentration and 70-90% of sulfuric acid being 95-98% in mass percentage concentration. The invention also provides the preparation method of the metallographic phase corrosive agent and a metallographic structure display method of the silver-palladium copper alloy. The novel metallographic phase corrosive agent allows the precipitated phase in the metallographic phase in the metallographic structure to be clearly and easily distinguished.

The invention provides a manufacture method of a composite gold wire, comprising the steps of providing main metal raw materials containing components of gold and silver; putting the main metal raw materials in a vacuum melting furnace and carrying out mixing melting by adding minor metal materials containing a palladium component in the vacuum melting furnace to prepare a gold-silver-palladium alloy melting liquid; then continuously casting and pulling and stretching the gold-silver-palladium alloy melting liquid into a gold-silver-palladium alloy wire rod; and at last, stretching the gold-silver-palladium alloy wire rod into a gold-silver-palladium alloy bonding wire with the preset wire diameter. The invention also provides the composite gold wire comprising the following ingredients in percentage by weight: 8.00-30.00 percent of gold, 66.00-90.00 percent of silver and 0.01-6.00 percent of palladium. By dint of the gold-silver-palladium alloy bonding wire prepared by mixing the three metal raw materials such as gold, silver and palladium, the invention can not only achieve the effect of metal wire rods made of pure gold but also greatly reduce the cost.

A piezoelectric ceramic composition including three components, Pb(Zn_1/3Nb_2/3)O₃, PbTiO₃, and PbZrO₃, and having a basic composition formula of Pb(Zn_1/3Nb_2/3)_xZr_yTi_zO₃, where 0.90<x+y+z<1.0, exhibits excellent piezoelectric characteristics and heat resistance and has a low sintering temperature of about 900° C., a coupling coefficient Kp not less than 0.50, and a Curie temperature not lower than 300° C. A piezoelectric device using this composition may employ inexpensive silver and silver-palladium alloys containing a high percentage of silver as material of an internal electrode, thus being inexpensive and having excellent characteristics.

The invention relates to the technical fields of ceramic dielectric materials and obtained components and parts, and specifically discloses voltage-sensitive ceramic powder and an obtained piezoresistor. The voltage-sensitive ceramic powder is obtained by doping a rare earth oxide into a ZnO-Bi2O3 voltage-sensitive ceramic system; the rare earth oxide is at least one of Y2O3, Dy2O3, Ho2O3 or La2O3; the weight of the added oxide is (1-3)% of the total weight of the ZnO-Bi2O3 voltage-sensitive ceramic system; when the voltage-sensitive ceramic powder is used for manufacturing the piezoresistor, the multi-layer-chip ceramic piezoresistor with the varistor voltage V1m that can reach 1, 000 V is realized, and the ceramic piezoresistor can replace a corresponding wafer high voltage piezoresistor; and a silver-palladium alloy electrode with a low content of palladium is used as the inner electrode, so that the low manufacturing cost of the product is realized, and the obtained piezoresistor can be widely applied to civil electronic products having requirements on low cost.

The invention discloses a method for separating and recovering silver and palladium from silver-palladium alloy scrap. The comprises the following steps of dissolving and leaching high-silver low-palladium alloy scrap by using nitric acid; conducting selective palladium precipitation on the leachate by adding a first palladium precipitation agent, and filtering to obtain silver-rich filtrate and palladium-rich salt; preparing high-purity silver powder from the silver-rich filtrate by adopting a reduction method; and after palladium-rich salt oxidation acid leaching, adding a second palladium precipitation agent for further purification and recovery. By adopting the recovery method to recover palladium, the problem of entrainment loss of precious metal ions caused by a traditional chlorination precipitation method is optimized, the tedious step of repeatedly washing silver chloride precipitates to recover the precious metal ions is avoided, the recovery process of the palladium is greatly shortened, the recovery rate and purity of the palladium are remarkably improved, meanwhile, the influence of the palladium on recovery of the high-purity silver powder is avoided, the energy consumption can be effectively reduced, the difficulty in wastewater treatment is reduced, and the method is environment-friendly.