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Gold-plated palladium-silver alloy single crystal bonding wire and manufacturing method thereof

A silver-palladium alloy, manufacturing method technology, applied in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve the problems of high price, heavy cost pressure, rising, etc., and achieve low price, stable and reliable performance, and electrical performance. excellent effect

Inactive Publication Date: 2015-02-25
江西蓝微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high price of yellow metal and precious metals, the price is rising day by day, which brings heavy cost pressure to the most used low-end LED and IC packages.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A gold-plated silver-palladium alloy single crystal bonding wire, the bonding wire is composed of the following raw materials in weight percentage: gold (Au) accounts for 0.8%, palladium (Pd) accounts for 0.003%, copper (Cu) accounts for 0.002% Calcium (Ca) accounts for 0.0001%, beryllium (Be) accounts for 0.0006%, europium (Eu) accounts for 0.002%, lanthanum (La) accounts for 0.001%, the rest is silver, and the sum is equal to 100%; the purity of gold is required to be greater than 99.99% The purity of silver is greater than 99.9999%, the purity of copper is greater than 99.9995%, the purity of palladium is greater than 99.999%, the purity of calcium is greater than 99.0%-99.5%, the purity of beryllium is greater than 99.999%, the purity of europium is greater than 99.9%, and the purity of lanthanum is greater than 99.5% %.

[0027] The manufacturing process steps and method of gold-plated silver-palladium alloy single crystal bonding wire are as follows:

[0028] ① E...

Embodiment 2

[0039] The present invention is achieved in this way, a gold-plated silver-palladium alloy single crystal bonding wire, the material that makes up the bonding wire is composed of the raw materials in the following weight percentages: gold (Au) accounts for 1.2%, palladium (Pd) accounts for 0.008%, Copper (Cu) accounts for 0.004%, calcium (Ca) accounts for 0.0003%, beryllium (Be) accounts for 0.0009%, europium (Eu) accounts for 0.004%, lanthanum (La) accounts for 0.003%, the rest is silver, and the sum is equal to 100%; The purity of gold is required to be greater than 99.99%, the purity of silver to be greater than 99.9999%, the purity of copper to be greater than 99.9995%, the purity of palladium to be greater than 99.999%, the purity of calcium to be greater than 99.0%-99.5%, the purity of beryllium to be greater than 99.999%, and the purity of europium to be greater than 99.9% %, the purity of lanthanum is greater than 99.5%.

[0040] The manufacturing process steps and met...

Embodiment 3

[0052] The present invention is achieved in this way, a gold-plated silver-palladium alloy single crystal bonding wire, the material that makes up the bonding wire is composed of the raw materials in the following weight percentages: gold (Au) accounts for 1.0%, palladium (Pd) accounts for 0.005%, Copper (Cu) accounts for 0.003%, calcium (Ca) accounts for 0.0002%, beryllium (Be) accounts for 0.0007%, europium (Eu) accounts for 0.003%, lanthanum (La) accounts for 0.002%, the rest is silver, and the sum is equal to 100%; The purity of gold is required to be greater than 99.99%, the purity of silver to be greater than 99.9999%, the purity of copper to be greater than 99.9995%, the purity of palladium to be greater than 99.999%, the purity of calcium to be greater than 99.0%-99.5%, the purity of beryllium to be greater than 99.999%, and the purity of europium to be greater than 99.9% %, the purity of lanthanum is greater than 99.5%.

[0053] The manufacturing process steps and met...

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Abstract

The invention provides a gold-plated palladium-silver alloy single crystal bonding wire and a manufacturing method thereof and relates to a metal bonding wire for a micro-electronic later packaging process and a manufacturing method thereof. Components of a material for the bonding wire include gold, palladium, copper, calcium, beryllium, europium, lanthanum and the balance silver, and the sum of the components is equal to 100%. The manufacturing method sequentially comprises the following steps of 1 extracting high-purity silver; 2 preparing a silver alloy ingot; 3 performing continuous casting to form a cast-condition palladium-silver alloy single crystal bus; 4 performing coarse drawing; 5 performing heat treatment; 6 plating gold on the surface; 7 performing finishing drawing; 8 performing heat treatment; 9 cleaning the surface; 10 performing shunt winding. The gold-plated palladium-silver alloy single crystal bonding wire has the advantages of a gold type bonding wire and the advantages of a silver based type bonding wire and is relatively low in price. The bonding wire is relatively low in price, excellent in electrical performance, good in oxidation resistance and stable and reliable in performance.

Description

technical field [0001] The invention relates to a metal bonding wire used in a microelectronic back-end packaging process and a manufacturing method thereof, in particular to a gold-plated silver-palladium alloy single crystal bonding wire and a manufacturing method thereof. Background technique [0002] At present, the most widely used wire packaging bonding wire used in the fields of integrated circuits and semiconductor discrete devices is gold bonding wire. Because yellow metal is a precious metal, the price is expensive and rising day by day, which brings heavy cost pressure to the most used medium and low-end LED and IC packages. Therefore, the industry urgently needs new bonding wire materials with relatively low cost and stable and reliable performance to replace gold bonding wires. Contents of the invention [0003] The object of the present invention is to provide a gold-plated silver-palladium alloy single-crystal bonding wire with relatively low price and exce...

Claims

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Application Information

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IPC IPC(8): H01L23/49H01L21/48C22C5/06C22C1/02
CPCH01L24/43H01L2224/43H01L2224/45164H01L2224/45644H01L2224/45565H01L2224/45H01L2224/45139H01L2924/00011H01L2924/00012H01L2924/01049
Inventor 徐云管李湘平彭庶瑶梁建华
Owner 江西蓝微电子科技有限公司
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