Silver palladium alloy monocrystal bonding wire and manufacturing method thereof

A silver-palladium alloy and bonding wire technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve the problems of difficulty in drawing, increased operational risk, and excellent copper wire, and achieves good oxidation resistance. , stable and reliable performance, excellent electrical performance

Active Publication Date: 2013-07-10
江西蓝微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, most domestic research and application for replacing gold-based bonding wires focus on copper-based bonding wires, but this type of bonding wire also has its shortcomings: ① Copper wires are difficult to pull due to work hardening during the drawing process. The wire diameter is as thin as that of gold bonding wire; ②Because the copper wire is too hard, it will cause the first solder joint to easil

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The present invention is achieved in this way, a silver-palladium alloy single crystal bonding wire, the material that makes up the bonding wire is composed of the following raw materials in weight percentage: palladium (Pd) accounts for 0.003%, copper (Cu) accounts for 0.002%, calcium (Ca) accounts for 0.0001%, beryllium (Be) accounts for 0.0006%, and the rest is silver. 99.0%-99.5%, the purity of beryllium is greater than 99.999%.

[0018] The manufacturing method of silver palladium alloy single crystal bonding wire: the manufacturing process steps and method of silver palladium alloy single crystal bonding wire are as follows:

[0019] ①Extraction of high-purity silver: Using the national standard GB / T 4135 No. 1 silver (IC-Ag99.99) as the base material, high-purity silver with a purity greater than 99.9999% is extracted, washed and dried for later use.

[0020] 2. Prepare silver alloy ingots: according to the above-mentioned relevant regulations of embodiment 1, a...

Embodiment 2

[0029] The present invention is achieved in this way, a silver-palladium alloy single crystal bonding wire, the material that makes up the bonding wire is composed of the following raw materials in weight percentage: palladium (Pd) accounts for 0.008%, copper (Cu) accounts for 0.004%, calcium (Ca) accounts for 0.0003%, beryllium (Be) accounts for 0.0009%, and the rest is silver. 99.0%-99.5%, the purity of beryllium is greater than 99.999%.

[0030] The manufacturing method of silver palladium alloy single crystal bonding wire: the manufacturing process steps and method of silver palladium alloy single crystal bonding wire are as follows:

[0031] ①Extraction of high-purity silver: Using the national standard GB / T 4135 No. 1 silver (IC-Ag99.99) as the base material, high-purity silver with a purity greater than 99.9999% is extracted, washed and dried for later use.

[0032] 2. Prepare silver alloy ingots: according to the above-mentioned relevant regulations of embodiment 2, a...

Embodiment 3

[0041] The present invention is achieved in this way, a silver-palladium alloy single crystal bonding wire, the material that makes up the bonding wire is composed of the following raw materials in weight percentage: palladium (Pd) accounts for 0.005%, copper (Cu) accounts for 0.003%, calcium (Ca) accounts for 0.0002%, beryllium (Be) accounts for 0.0007%, and the rest is silver. 99.0%-99.5%, the purity of beryllium is greater than 99.999%.

[0042] The manufacturing method of silver palladium alloy single crystal bonding wire: the manufacturing process steps and method of silver palladium alloy single crystal bonding wire are as follows:

[0043] ①Extraction of high-purity silver: Using the national standard GB / T 4135 No. 1 silver (IC-Ag99.99) as the base material, high-purity silver with a purity greater than 99.9999% is extracted, washed and dried for later use.

[0044] 2. Prepare silver alloy ingots: according to the above-mentioned relevant regulations of embodiment 3, a...

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PUM

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Abstract

The invention discloses a silver palladium alloy monocrystal bonding wire and a manufacturing method thereof. The materials forming the bonding wire are as follows, by weight, silver content is 99.9868%-99.9943%, palladium content is 0.003%-0.008%, copper content is 0.002%-0.004%, calcium content is 0.0001-0.0003%, and beryllium content is 0.0006%-0.0009%. The bonding wire has the advantages of being low in price, good in electrical properties, good in oxidation resistance properties, and stable and reliable in properties. The bonding wire can be used for bonding gold wires and gold-plating bonding copper wires in the fields of middle and low end light emitting diode (LED) package, semiconductor devices, and integrated circuit (IC) package in a replaced mode.

Description

technical field [0001] The invention relates to a metal bonding wire and a manufacturing method thereof for a microelectronic subsequent packaging process, in particular to a silver-palladium alloy single crystal bonding wire and a manufacturing method thereof. Background technique [0002] At present, the most widely used wire packaging bonding wire used in the fields of integrated circuits and semiconductor discrete devices is gold bonding wire. Because yellow metal is a precious metal, the price is expensive and rising day by day, which brings heavy cost pressure to the most used medium and low-end LED and IC packages. Therefore, the industry urgently needs new bonding wire materials with relatively low cost and stable and reliable performance to replace gold-based bonding wires. [0003] At present, most domestic research and application for replacing gold-based bonding wires focus on copper-based bonding wires, but this type of bonding wire also has its shortcomings: ①...

Claims

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Application Information

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IPC IPC(8): H01L23/49H01L21/48C22C5/08
CPCH01L2224/45144H01L2224/45147H01L2224/45139H01L2224/45565H01L2924/01047H01L2924/00014H01L2924/12041H01L2224/45015H01L2224/43848H01L24/43H01L2224/45644H01L2924/00011H01L2224/45H01L2224/43H01L24/45H01L2924/01203H01L2924/01204H01L2924/01046H01L2924/01029H01L2924/0102H01L2924/01004H01L2924/00015H01L2924/013H01L2924/00H01L2224/48H01L2924/01006H01L2924/00012H01L2924/20751H01L2924/20752H01L2924/20753H01L2924/20754H01L2924/20755H01L2924/01049
Inventor 徐云管彭庶瑶梁建华
Owner 江西蓝微电子科技有限公司
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