The application discloses a high-selectivity
acetone gas sensor and a preparation method thereof, and comprises the following steps: providing a MEMS micro-hotplate substrate with a defined active window as a working substrate, in-situ growing an epsilon-WO3
nanostructure array in the active window, sequentially constructing a super-thin NiO continuous shell layer and a discrete CuO catalytic island on the surface of the epsilon-WO3
nanostructure array to form a radial p-n-p
heterojunction sensitive structure with epsilon-WO3 as the core and NiO / CuO as the shell, performing a thermal stabilization treatment on the
heterojunction sensitive structure, constructing a ZIF-8
molecular sieve film or a ring-shaped fluorinated
ionomer selective layer on the surface of the
heterojunction sensitive structure to obtain a high-selectivity sensor device, effectively blocking the passage of interfering molecules, and significantly improving the selectivity ratio and the anti-cross interference capability of the sensor device; meanwhile, based on the MEMS micro-hotplate substrate and the thermal stabilization treatment process, the device has good
structural stability, low
power consumption characteristics and compatibility with a standard
semiconductor process, and
high selectivity for
acetone is realized while high sensitivity is ensured.