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Copper alloy single-crystal bonding wire for microelectronic packaging and preparation method thereof

A technology of microelectronic packaging and copper alloy, which is applied in the direction of circuits, electrical components, and electrical solid devices, can solve problems such as poor corrosion resistance, reduced electrical conductivity, and easy oxidation of the surface, and achieve low cost, low hardness, good plasticity and The effect of corrosion resistance

Active Publication Date: 2017-07-28
江西蓝微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the deficiencies of the prior art above, to provide a copper alloy single crystal bonding wire for microelectronic packaging and a preparation method thereof, which overcomes the easy oxidation of the surface of the existing copper alloy bonding wire, poor corrosion resistance, and poor electrical conductivity. problems such as reduced resistance, high hardness, and wire breakage

Method used

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Examples

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Effect test

Embodiment 1

[0020] The present invention is achieved in this way, a copper alloy single crystal bonding wire with high-purity copper as the main material. (Sc) content is 0.013%, iron (Fe) content is: 0.012%, titanium (Ti) content is 0.006%, the rest is copper and unavoidable impurities, the sum is equal to 100%; the purity of copper is required to be greater than 99.99%, The purity of silver is greater than 99.999%, the purity of scandium is greater than 99.999%, and the purity of iron and titanium is greater than 99.999%.

[0021] The preparation process steps and method of copper alloy single crystal bonding wire for microelectronic packaging are as follows:

[0022] ① Extract high-purity copper: immerse TU00 copper (99.99% copper) in the electrolyte as the anode, and immerse the high-purity copper foil in the electrolyte as the cathode; input 9V, 2.5A direct current between the anode and the cathode to replenish fresh The electrolyte method maintains the temperature of the electrolyt...

Embodiment 2

[0033] The present invention is achieved in this way, a copper alloy single crystal bonding wire with high-purity copper as the main material. (Sc) content is 0.018%, iron (Fe) content is: 0.008%, titanium (Ti) content is 0.003%, the rest is copper and unavoidable impurities, the sum is equal to 100%; the purity of copper is required to be greater than 99.99%, The purity of silver is greater than 99.999%, the purity of scandium is greater than 99.999%, and the purity of iron and titanium is greater than 99.999%.

[0034] The preparation process steps and method of copper alloy single crystal bonding wire for microelectronic packaging are as follows:

[0035] ① Extraction of high-purity copper: immerse TU00 copper (99.99% copper) in the electrolyte as the anode, and immerse the high-purity copper foil in the electrolyte as the cathode; input 8V, 3A DC between the anode and cathode to supplement fresh electrolysis The electrolyte method maintains the temperature of the electrol...

Embodiment 3

[0046] The present invention is achieved in this way, a copper alloy single crystal bonding wire with high-purity copper as the main material. (Sc) content is 0.01%, iron (Fe) content is: 0.01%, titanium (Ti) content is 0.01%, the rest is copper and unavoidable impurities, the sum is equal to 100%; the purity of copper is required to be greater than 99.99%, The purity of silver is greater than 99.999%, the purity of scandium is greater than 99.999%, and the purity of iron and titanium is greater than 99.999%.

[0047] The preparation process steps and method of copper alloy single crystal bonding wire for microelectronic packaging are as follows:

[0048] ① Extract high-purity copper: immerse TU00 copper (99.99% copper) in the electrolyte as the anode, and immerse the high-purity copper foil in the electrolyte as the cathode; input 7V, 3.5A direct current between the anode and the cathode to replenish fresh The electrolyte method maintains the temperature of the electrolyte n...

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Abstract

The invention provides a copper alloy single-crystal bonding wire for microelectronic packaging and a preparation method thereof. The bonding wire adopts high-purity copper as a main body material, and comprises micro-scale metal materials of silver, scandium, iron, titanium and the like. The bonding wire is composed by the following materials in weight percentage: 99. 9%-99. 95% of copper, 0.01-0.02% of silver, 0.01-0.02% of scandium, 0.001-0.015% of iron and 0.001-0.01% of titanium. The preparation method comprises the following steps: extracting the high-purity copper, the purity of which is larger than 99.99%; preparing a copper alloy ingot; preparing a cast copper alloy single crystal bus; drawing the single crystal bus into a single crystal wire, the diameter of which is about 1 mm, and then, carrying out heat treatment; and then, carrying out precision drawing, heat treatment and cleaning to prepare copper alloy single crystal bonding wires in different specifications.

Description

technical field [0001] The invention relates to a metal bonding wire used in a microelectronic subsequent packaging process and a preparation method thereof, in particular to a copper alloy single crystal bonding wire used in a microelectronic packaging and a preparation method thereof. Background technique [0002] At present, gold and silver bonding wires are most widely used in wire packaging bonding wires used in integrated circuits, semiconductor discrete devices and other fields. Since gold and silver are precious metals, the price is expensive and rising day by day, which brings heavy cost pressure to the users of low-end LED and IC packaging with the largest consumption. At the same time, with the development of integrated circuit and semiconductor device packaging technology to multi-lead, high integration and miniaturization, packaging materials require the use of bonding wires with thinner wire diameters and better electrical properties for narrow-pitch and long-d...

Claims

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Application Information

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IPC IPC(8): H01L23/49H01L21/48
CPCH01L24/43H01L24/45H01L2224/45166H01L2224/45147H01L2224/4516H01L2224/45139H01L2224/4321H01L2224/4381H01L2924/01029H01L2924/01026H01L2924/01021H01L2924/01022H01L2924/01047H01L2224/43848H01L2924/00011H01L2924/01049
Inventor 袁斌徐云管彭庶瑶章敏
Owner 江西蓝微电子科技有限公司
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