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Monocrystal silicon inverted pyramid array structure suede, and preparation method and application thereof

An inverted pyramid and array structure technology, which is applied in the field of monocrystalline silicon inverted pyramid array structure suede and its preparation, can solve the problems of inability to adapt to large-scale industrial production, complex processing process, and high cost.

Inactive Publication Date: 2014-07-30
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned processing technology based on double-beam interference is complex and expensive, and it is still not suitable for industrial mass production. Therefore, it is particularly important to find a cheap, fast and efficient nano-inverted pyramid etching process.
[0004] At present, there is still a lack of satisfactory, cheap, fast and efficient nano-inverted pyramid textured etching process that can adapt to industrialized large-scale production. Etching Technology of Texture with Array Structure

Method used

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  • Monocrystal silicon inverted pyramid array structure suede, and preparation method and application thereof
  • Monocrystal silicon inverted pyramid array structure suede, and preparation method and application thereof
  • Monocrystal silicon inverted pyramid array structure suede, and preparation method and application thereof

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preparation example Construction

[0069] Preparation method of monocrystalline silicon inverted pyramid array structure textured surface

[0070] The invention also provides a method for preparing the suede with the inverted pyramid array structure of the single crystal silicon of the invention. Typically, this method includes:

[0071] (1) generating a polymer microsphere monolayer film on at least one main surface of the substrate to obtain a substrate-polymer microsphere monolayer film;

[0072] (2) generating a mask layer on the substrate-polymer microsphere monolayer film to obtain a substrate-polymer microsphere monolayer film-mask layer;

[0073] (3) removing the polymer microspheres in the substrate-polymer microsphere monolayer film-mask layer, so that the main surface exposes a plurality of units not covered by the mask;

[0074] (4) The units not covered by the mask are etched into inverted pyramid-shaped embossed grooves, and an inverted pyramid array structure texture is obtained on the main sur...

Embodiment 1

[0094] Monocrystalline Silicon Inverted Pyramid Array Structure Texture No.1

[0095] Such as figure 1 As mentioned, the method for preparing the monocrystalline silicon inverted pyramid structure suede in this embodiment comprises the following steps:

[0096] The silicon substrate is cleaned and ready for use, such as Picture 1-1 shown;

[0097] The drift method in self-assembly is used to form the array of polymer nanospheres, and then paved on the substrate, where the average diameter of the polymer microspheres can be selected between 50nm and 10000nm, such as Figure 1-2 shown;

[0098] Using PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) in Figure 1-2 A silicon nitride mask layer is grown on the surface of the object shown to protect the surface of the silicon substrate, and the thickness of the silicon nitride film is controllable, such as Figure 1-3 shown;

[0099] pyrolysis Figure 1-3 The polymer balls o...

Embodiment 2

[0104] Monocrystalline Silicon Inverted Pyramid Array Structure Texture No.2

[0105] Such as figure 1 As mentioned, the method for preparing the monocrystalline silicon inverted pyramid structure suede in this embodiment comprises the following steps:

[0106] The silicon substrate is cleaned and ready for use, such as Picture 1-1 shown;

[0107] The drift method in self-assembly is used to form the array of polymer nanospheres, and then paved on the substrate, where the average diameter of the polymer microspheres can be selected between 50nm and 10000nm, such as Figure 1-2 shown;

[0108] Using the DC sputtering method in Figure 1-2 A metal Ti mask layer is grown on the surface of the shown object to protect the surface of the silicon substrate, and the thickness of the Ti film is controllable, such as Figure 1-3 shown;

[0109] Removal by sonication with toluene solution Figure 1-3 The polymer balls on the medium-silicon substrate are then wet-etched with lye t...

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Abstract

The invention provides a monocrystal silicon inverted pyramid array structure suede, and a preparation method and application thereof. Specifically, the preparation method of the monocrystal silicon inverted pyramid array structure suede comprises the steps of generating a polymeric microsphere monolayer film on at least one main surface of a substrate, so as to obtain a substrate-polymeric microsphere monolayer film; generating a mask layer on the substrate-polymeric microsphere monolayer film, so as to obtain a substrate-polymeric microsphere monolayer film-mask layer; removing polymeric microspheres in the substrate-polymeric microsphere monolayer film-mask layer so as to expose a plurality of units uncovered by the mask layer on the main surface; and corroding the units uncovered by the mask layer into inverted pyramid pressing tanks, and thus obtaining the inverted pyramid array structure suede on the main surface of the substrate. The method is simple and low in cost, and overcomes the defects that the suede cannot be produced in large scale and the preparation conditions are severe in the prior art.

Description

technical field [0001] The invention relates to the field of micro-nano processing, in particular to a monocrystalline silicon inverted pyramid array structure suede and its preparation method and application. Background technique [0002] With the rapid development of the global economy, the human demand for energy is increasing, and actively developing new energy has become one of the main issues in the world today. As a very important renewable and clean energy, solar energy has rapidly entered the world stage. With the rise of the photovoltaic industry, the green power brought by solar cells is gradually changing people's way of life. In order to increase the proportion of solar battery power generation in the entire power system in the future, it is necessary to further reduce its production cost and improve battery efficiency. Ultra-thin crystalline silicon solar cells (10 μm) can greatly reduce the cost of raw materials and maintain high photoelectric conversion effi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06H01L31/0236H01L31/18
CPCY02P70/50
Inventor 叶继春高平奇李思众杨熹韩灿
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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