Semiconductor template substrate, light-emitting element using a semiconductor template substrate, and a production method therefor

Abstract

A light-emitting element comprises a semiconductor layer, a light-emitting laminated structure and a plurality of inverted pyramid structures formed in one surface of the light-emitting laminated structure. The transverse cross-sectional areas of the inverted pyramid structures decrease extending perpendicularly relative to the light-emitting laminated structure. The light-emitting element is rendered easier to produce due to the inverted pyramid structures.

Description

technical field [0001] The present invention relates to a semiconductor template substrate, a light-emitting device using the semiconductor template substrate, and a method for manufacturing the light-emitting device, and more particularly, to a semiconductor template substrate for reducing crystal defects and capable of being easily separated, using the semiconductor template substrate A light-emitting device at the bottom and a method for manufacturing the light-emitting device. Background technique [0002] Conventional semiconductor light emitting devices are formed as horizontal devices or vertical devices with an insulating substrate such as sapphire. For example, FIG. 6A shows a conventional horizontal semiconductor light emitting device, and FIG. 6B shows a conventional vertical semiconductor light emitting device. [0003] The horizontal semiconductor light emitting device includes a buffer layer 2 , an n-type nitride semiconductor layer 3 , an active layer 4 and a...

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Problems solved by technology

However, the laser lift-off process induces thermal / mechanical deformation of the light emitting stack structure including the active layer

For example, due to different lattice constants and thermal expansion coefficients, mechanical stress occurs between the nitride semiconductor layer and the thick sapphire substrate. Since the vertical nitride semiconductor light-emitting element light-emitting device cannot withstand mechanical stress, the vertical nitride semiconductor emits light. The device is subjected to mechanical / thermal damage

[0005] As described above, when the thin films of the stacked light-emitting structure are damaged, high leakage current is caused, and in addition, the chip yield of the light-emitting device is greatly reduced, resulting in a decrease in the overall performance of the light-emitting device

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