Normal temperature texturing method, silicon wafer prepared by texturing, solar battery piece and preparation method thereof
A technology of solar cells and solar cells, applied in the field of solar cells, can solve the problems of high average reflectance of the silicon surface, low conversion efficiency, long reaction time, etc., achieve smooth and orderly inner surface, and decrease light reflectance Visible, easy-to-apply results
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Embodiment 1
[0054] 1) Surface cleaning steps
[0055] The size is 156×156cm 2 P-type silicon wafer (resistivity 1~3Ωcm), put it into acetone and ultrasonically clean it for 5 minutes, put it into ethanol and ultrasonically clean it for 5 minutes, and then place it in the mixed solution of sulfur solution and hydrogen peroxide solution (the sulfuric acid solution) Concentration is 70wt%, the concentration of hydrogen peroxide solution is 35wt%, the volume ratio of sulfuric acid solution and hydrogen peroxide solution is 3: 1), the silicon chip is heated and boiled and maintained for 0.5 hours, and finally cleaned with deionized water ultrasonically.
[0056] 2) Etching step
[0057] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in the acidic texturing solution consisting of copper nitrate, hydrofluoric acid and hydrogen peroxide (wherein the concentration of copper nitrate is 80mmol / L, and the concentration of hydrofluoric acid is 5.6mol / L, the concentration of hydr...
Embodiment 2-5
[0061] Its operating steps are the same as in Example 1, except that the concentration of copper nitrate, hydrofluoric acid and hydrogen peroxide in the acidic texturing solution and the temperature and time during texturing are different.
[0062] In Example 2, the concentration of copper nitrate was 70 mmol / L, the concentration of hydrofluoric acid was 7 mol / L, the concentration of hydrogen peroxide was 0.4 mol / L, the temperature of the acidic texturing solution was 35° C., and the texturing time was 6 minutes.
[0063] In Example 3, the concentration of copper nitrate is 120mmol / L, the concentration of hydrofluoric acid is 2.4mol / L, the concentration of hydrogen peroxide is 1.2mol / L, the temperature of the acidic texturing solution is 25°C, and the texturing time is 8 minutes .
[0064] In Example 4, the concentration of copper nitrate was 100 mmol / L, the concentration of hydrofluoric acid was 4.5 mol / L, the concentration of hydrogen peroxide was 1 mol / L, the temperature of...
Embodiment 6
[0089] 1) Surface cleaning steps
[0090] The size is 156×156cm 2 N-type silicon wafers (resistivity 1~3Ωcm), put them into acetone and ultrasonically clean them for 5 minutes, put them into ethanol for 5 minutes, and then place them in a mixture of sulfuric acid and hydrogen peroxide (the volume of sulfuric acid and hydrogen peroxide The ratio is 3:1, the concentration of sulfuric acid is 70wt%, and the concentration of hydrogen peroxide is 35wt%), heat and boil the silicon chip and keep it for 1 hour, and finally clean it with deionized water ultrasonically.
[0091] 2) Etching step
[0092] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in the acidic texturing solution consisting of copper nitrate, hydrofluoric acid and hydrogen peroxide (wherein the concentration of copper nitrate is 80mmol / L, and the concentration of hydrofluoric acid is 5mol / L L, the concentration of hydrogen peroxide is 0.9mol / L), the temperature of the acidic texturing solution is...
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