Normal temperature texturing method, silicon wafer prepared by texturing, solar battery piece and preparation method thereof

A technology of solar cells and solar cells, applied in the field of solar cells, can solve the problems of high average reflectance of the silicon surface, low conversion efficiency, long reaction time, etc., achieve smooth and orderly inner surface, and decrease light reflectance Visible, easy-to-apply results

Inactive Publication Date: 2018-04-17
北京普扬科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the existing technology of texturing process, there are common problems such as high heating temperature, long reaction time, relatively large average reflectance of the obtained silicon surface, and low fill factor and conversion efficiency of the solar cells after texturing.

Method used

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  • Normal temperature texturing method, silicon wafer prepared by texturing, solar battery piece and preparation method thereof
  • Normal temperature texturing method, silicon wafer prepared by texturing, solar battery piece and preparation method thereof
  • Normal temperature texturing method, silicon wafer prepared by texturing, solar battery piece and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] 1) Surface cleaning steps

[0055] The size is 156×156cm 2 P-type silicon wafer (resistivity 1~3Ωcm), put it into acetone and ultrasonically clean it for 5 minutes, put it into ethanol and ultrasonically clean it for 5 minutes, and then place it in the mixed solution of sulfur solution and hydrogen peroxide solution (the sulfuric acid solution) Concentration is 70wt%, the concentration of hydrogen peroxide solution is 35wt%, the volume ratio of sulfuric acid solution and hydrogen peroxide solution is 3: 1), the silicon chip is heated and boiled and maintained for 0.5 hours, and finally cleaned with deionized water ultrasonically.

[0056] 2) Etching step

[0057] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in the acidic texturing solution consisting of copper nitrate, hydrofluoric acid and hydrogen peroxide (wherein the concentration of copper nitrate is 80mmol / L, and the concentration of hydrofluoric acid is 5.6mol / L, the concentration of hydr...

Embodiment 2-5

[0061] Its operating steps are the same as in Example 1, except that the concentration of copper nitrate, hydrofluoric acid and hydrogen peroxide in the acidic texturing solution and the temperature and time during texturing are different.

[0062] In Example 2, the concentration of copper nitrate was 70 mmol / L, the concentration of hydrofluoric acid was 7 mol / L, the concentration of hydrogen peroxide was 0.4 mol / L, the temperature of the acidic texturing solution was 35° C., and the texturing time was 6 minutes.

[0063] In Example 3, the concentration of copper nitrate is 120mmol / L, the concentration of hydrofluoric acid is 2.4mol / L, the concentration of hydrogen peroxide is 1.2mol / L, the temperature of the acidic texturing solution is 25°C, and the texturing time is 8 minutes .

[0064] In Example 4, the concentration of copper nitrate was 100 mmol / L, the concentration of hydrofluoric acid was 4.5 mol / L, the concentration of hydrogen peroxide was 1 mol / L, the temperature of...

Embodiment 6

[0089] 1) Surface cleaning steps

[0090] The size is 156×156cm 2 N-type silicon wafers (resistivity 1~3Ωcm), put them into acetone and ultrasonically clean them for 5 minutes, put them into ethanol for 5 minutes, and then place them in a mixture of sulfuric acid and hydrogen peroxide (the volume of sulfuric acid and hydrogen peroxide The ratio is 3:1, the concentration of sulfuric acid is 70wt%, and the concentration of hydrogen peroxide is 35wt%), heat and boil the silicon chip and keep it for 1 hour, and finally clean it with deionized water ultrasonically.

[0091] 2) Etching step

[0092] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in the acidic texturing solution consisting of copper nitrate, hydrofluoric acid and hydrogen peroxide (wherein the concentration of copper nitrate is 80mmol / L, and the concentration of hydrofluoric acid is 5mol / L L, the concentration of hydrogen peroxide is 0.9mol / L), the temperature of the acidic texturing solution is...

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PUM

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Abstract

The invention discloses an acid texturing liquid used for etching a solar battery silicon wafer, a texturing method, a solar battery piece and a manufacturing method thereof. The acid texturing liquidcomprises a copper ion source used for providing copper ions at the concentration of 20-150.0 mmol / L, a fluorine ion source used for providing fluorine ions at the concentration of 0.5-10.0 mol / L andan oxidizing agent at the concentration of 0.2-2.0 mol / L for oxidizing copper into copper ions. By adoption of the acid texturing liquid, the silicon wafer surface can be well textured, so that an independent, complete and tightly arranged inverted pyramid structure can be formed on the silicon wafer surface at the room temperature within extremely short time; by virtue of the structure, the reflectivity of incident light on the textured surface can be lowered to 4-12%, so that the solar battery efficiency is improved; and by adoption of the acid texturing liquid and the texturing method, production cost can be lowered, the reaction temperature can be lowered, the reaction time can be shortened, and production yield can be increased.

Description

technical field [0001] The present invention relates to the technical field of solar cells, in particular, to a normal-temperature texturing method for silicon chip inverted pyramids, and silicon chips made of texturing, solar cells and their preparation methods. Background technique [0002] With the development of society, the demand for energy in all countries in the world has increased sharply, while non-renewable resources such as fossil energy have been decreasing day by day, and fossil energy has caused serious environmental pollution. As a new type of green renewable energy, solar energy is expected to become one of the main energy sources in the future. At present, crystalline silicon solar cells are one of the effective ways to utilize solar energy, and occupy a mainstream position in the photovoltaic industry. In the photovoltaic industry, solar cells have been developing towards high conversion efficiency and low cost. An important part of improving the conversio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L31/0236H01L31/18
CPCH01L31/02363H01L31/1804H01L21/30604Y02E10/547Y02P70/50
Inventor 陈伟吴俊桃陈全胜赵燕王燕刘尧平杜小龙
Owner 北京普扬科技有限公司
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