Preparation method of solar cell with buried charge layer

A technology of solar cells and electric charges, applied in circuits, electrical components, and final product manufacturing, etc., can solve problems such as poor resistance to high-energy particle damage

Active Publication Date: 2010-11-10
南通东湖国际商务服务有限公司
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Problems solved by technology

But this P + The field is easily attenuated by the radiation of high-energy particles in space, and its ability to resist damage by high-energy particles is poor compared to BSR cells; (5) high-efficiency and low-resistance silicon solar cells (RESC), which use 0.2Ωcm and 0.3Ωcm p A battery made of molten silicon in the type area, which is characterized in that a passivation layer is prepared in the emission area of ​​the battery

Method used

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  • Preparation method of solar cell with buried charge layer
  • Preparation method of solar cell with buried charge layer

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Experimental program
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Effect test

Embodiment 1

[0026] 1. The structural design of the solar cell see figure 1 .

[0027] 2. Preparation of solar cells

[0028] A (100)p-type silicon wafer is selected, with a resistivity of 3Ωcm and a thickness of 200μm.

[0029] 1. Dry oxygen:

[0030] Oxygen flow, gas flow rate 1L / min, oxidation temperature 1050°C, 20 minutes, grow a 45-50nm thick silicon oxide layer;

[0031] 2. Texturing:

[0032] Use diluted 5% HF solution to remove the oxide layer on the front surface, and use NaOH plus C 2 h 5 The OH method corrodes the texture, the temperature of the lye is about 80°C, the concentration is 1-2%, and the corrosion time is 15 minutes.

[0033] 3. Diffusion knot:

[0034] The diffusion furnace is heated up to the diffusion temperature (850-900° C.) in advance. Nitrogen gas (800ml / min) is introduced first, the silicon wafer is pushed into the constant temperature zone, and preheated for 5 minutes. Then, the nitrogen flow rate was adjusted to 60ml / min, and simultaneously the flo...

Embodiment 2

[0055] The difference between scheme two and scheme one is only in the formation process of silicon dioxide, that is, the fifth step in the specific implementation scheme. The rest of the steps are the same.

[0056] Form a silicon oxide film on the back of a silicon wafer using atomic layer deposition technology:

[0057] Use H 2 N(CH 2 ) 3 Si(OEt) 3 As a silicon source, water (H 2 O) and O 3 As an oxygen source, H 2 N(CH 2 ) 3 Si(OEt) 3 Pulse time is 1s, H 2 O pulse time is 400ms, O 3 The pulse time is 300ms, the cleaning gas is nitrogen, the pulse time is 2s, the substrate temperature is 100-200°C, the working pressure is 0.08-0.10Torr, the total pulse of precursor injection is 2400 times, and the cleaning pulse is 2400 times.

[0058] Implementation effect: Finally, the performance test of the battery is carried out, at AM1.5, 100mW / cm 2 Under the irradiation of standard light intensity, the open-circuit voltage of the 4.0cm×4.0cm monocrystalline silicon solar...

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Abstract

The invention relates to a monocrystalline silicon solar cell and a preparation method thereof, in particular to a monocrystalline silicon solar cell with a buried charge layer introduced into a passivating dielectric layer, and belongs to the technical field of the preparation of solar cell devices. The monocrystalline silicon solar cell is developed based on the preparation scheme of the general monocrystalline silicon solar cell and adopts a structure of partial back contact, and the preparation method is characterized by comprising the steps of: growing an SiO2 layer on the back of a solar cell by utilizing a thermal oxidation or atomic layer deposition technology, growing a layer of SiNx thin film by using PECVD (Plasma Enhanced Chemical Vapor Deposition), etching a back electrode contact area by using a laser grooving technology, then injecting electrons with a corona mode, and finally depositing an Al electrode with a vacuum evaporation mode. The invention can effectively improve the solar cell efficiency.

Description

technical field [0001] The invention relates to a monocrystalline silicon solar cell and a preparation method thereof, in particular to a monocrystalline silicon solar cell utilizing a charge buried layer introduced into a passivation medium layer. The invention belongs to the technical field of solar cell device preparation. Background technique [0002] Energy shortage and environmental damage have made clean energy solar cells attract great attention worldwide. Many governments and civil organizations have invested a lot of manpower and financial resources in the development and production of clean energy solar cells. The low efficiency of solar cells is one of the key factors affecting its application, and it is also a difficult problem that scientists all over the world are eager to solve. The main obstacles restricting the further improvement of the photoelectric conversion efficiency of crystalline silicon solar cells are: (1) the influence of grid lines on the surfa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 丁建宁袁宁一
Owner 南通东湖国际商务服务有限公司
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