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Super-hydrophobic high-transmittance SiO2 anti-reflecting thin film and preparation method thereof

An anti-reflection and high-transmission technology, which is applied in the field of superhydrophobic high-transmission SiO2 anti-reflection film and its preparation, can solve the problems of low transmittance and high refractive index of the film, and achieve obvious anti-reflection effect, small transmittance attenuation, The effect of lowering the refractive index

Inactive Publication Date: 2016-03-16
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the preparation of SiO 2 The sol is prepared by hydrochloric acid catalysis. After coating the sol prepared by acid catalysis, the film is denser and the refractive index is larger, so the transmittance of the film is not high.

Method used

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  • Super-hydrophobic high-transmittance SiO2 anti-reflecting thin film and preparation method thereof
  • Super-hydrophobic high-transmittance SiO2 anti-reflecting thin film and preparation method thereof
  • Super-hydrophobic high-transmittance SiO2 anti-reflecting thin film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0033] Superhydrophobic high transmittance SiO 2 The preparation method of anti-reflection film, the whole preparation process can be subdivided into three steps: preparation of sol, treatment of substrate and preparation of film (dipping and pulling, drying treatment).

[0034]Preparation of sol: A TMES-doped hybrid sol was prepared by a sol-gel one-step method, and the hybrid sol was labeled SolC. Before the experiment, the beaker, measuring cylinder, dropper and other equipment were acid-washed, then ultrasonically cleaned for 30 minutes, finally rinsed with deionized water, and dried in an oven for later use. Preparation steps: in the first step, 1.3ml of ammonia water is added to 40ml of absolute ethanol, and the mixed solution is magnetically stirred at a constant temperature of 50°C for 10 minutes. In the second step, 1 ml of tetraethyl orthosilicate (TEOS) and 0.8 ml of trimethylethoxysilane (TMES) were mixed, and then added dropwise to the mixed solution of the first...

Embodiment 2

[0044] A superhydrophobic and highly transparent SiO 2 The preparation method of the anti-reflection film adopts the following steps:

[0045] (1) The hybrid sol doped with trimethylchlorosilane is prepared by the sol-gel method, and the following steps are specifically adopted:

[0046] (1-1) Add ammonia water to absolute ethanol, the volume ratio of ammonia water to absolute ethanol is 1:30, stir magnetically at a constant temperature of 40°C for 20 minutes to obtain a mixed solution;

[0047] (1-2) Mix ethyl orthosilicate and trimethylethoxysilane, the volume ratio of ethyl orthosilicate and trimethylethoxysilane is 1:0.5, and then add it dropwise to (1-1 ) to form a reaction solution in the mixed solution, the volume concentration of ethyl orthosilicate in the solution is 3.08%. ;

[0048] (1-3) The reaction solution was magnetically stirred at 30° C. for 30 h, and then aged at room temperature for 4 days to prepare a hybrid sol;

[0049] (2) Clean the surface of the g...

Embodiment 3

[0056] A superhydrophobic and highly transparent SiO 2 The preparation method of the anti-reflection film adopts the following steps:

[0057] (1) The hybrid sol doped with trimethylchlorosilane is prepared by the sol-gel method, and the following steps are specifically adopted:

[0058] (1-1) Add ammonia water to absolute ethanol, the volume ratio of ammonia water to absolute ethanol is 1:50, stir magnetically at a constant temperature of 60°C for 5 minutes to obtain a mixed solution;

[0059] (1-2) Mix ethyl orthosilicate and trimethylethoxysilane, the volume ratio of ethyl orthosilicate and trimethylethoxysilane is 1:1, then add dropwise to (1- 1) A reaction solution is formed in the mixed solution, and the volume concentration of ethyl orthosilicate in the solution is 1.89%. ;

[0060] (1-3) The reaction solution was magnetically stirred at 40°C for 15 hours, and then aged at room temperature for 6 days to prepare a hybrid sol;

[0061] (2) Clean the surface of the gla...

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Abstract

The invention relates to a super-hydrophobic high-transmittance SiO2 anti-reflecting thin film and a preparation method thereof; a hybrid sol doped with trimethylchlorosilane is prepared by a sol-gel method; the surface of a glass slide is cleaned; a plating film is formed on the surface of the glass slide by a dip-coating method, and the super-hydrophobic high-transmittance SiO2 anti-reflecting thin film is obtained after the plating film is dried. Compared with the prior art, the preparation method has the advantages of simple manufacturing process and low cost, and the obtained sol has good uniformity and can be used for large-area film forming. Due to relatively high transmission, incident light transmission can be improved and the solar cell efficiency can be improved when the anti-reflecting thin film is used on a photovoltaic glass cover plate. Moreover, because the thin film has good hydrophobicity and has good self cleaning ability, the thin film is suitable for outdoor humid environments.

Description

technical field [0001] The invention relates to a multifunctional anti-reflection film material for a solar photovoltaic system, in particular to a superhydrophobic high-transmission SiO 2 Anti-reflection film and its preparation method. Background technique [0002] At present, the solar photovoltaic industry is in the trough of development. The reason is that its energy conversion efficiency is low and the cost is too high. With the increasing scarcity of fossil fuel resources such as coal and oil, coupled with the pressure of environmental protection, the development of solar energy, wind energy, etc. Renewable energy is imminent. Compared with renewable energy such as wind energy and geothermal energy, solar energy has the characteristics of extremely wide energy distribution and no pollution during use. Converting solar energy directly into electrical energy through solar panels will inevitably become an important way for human beings to solve energy problems. Howeve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/25
Inventor 刘永生徐娟杜文龙王玟苈卢晓飞于文英沈毓龙孙万荣周桃
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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