The invention belongs to the technical field of ferroelectric memories, and particularly relates to an embedded
electrode structure capable of effectively reducing coercive
voltage of a ferroelectric domain wall memory and a preparation method of the embedded
electrode structure. According to the invention, the ferroelectric film is used as a basic storage unit; the surface of the ferroelectric film is provided with an embedded
electrode groove, and the groove is filled with an
electrode material; and a
metal or
metal oxide electrode and a
silicon dioxide /
silicon-based or
perovskite type
single crystal substrate are arranged below the ferroelectric film. The embedded electrode structure can adjust the working thickness of the ferroelectric film, so that the coercive
voltage of the ferroelectric domain wall memory is regulated and controlled, and the working
voltage of the memory is continuously adjustable; a tip with a small curvature
radius exists on the contact surface of an
electrode material and a ferroelectric film in an embedded electrode structure, so that a large amount of charges are concentrated, the local
electric field of the tip is enhanced, electric domain
nucleation is quicker, and the working speed and working current of the memory are improved; the embedded electrode is in full contact with the conductive domain wall, so that poor contact between the
electrode material and the conductive domain wall is avoided, and the reading current is greatly increased.