131results about How to "Avoid reorganization" patented technology

A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer.

Ultradispersed ones of primary particles of nanometer-sized carbon are obtained by applying a wet-type milling method and/or a wet dispersion method to an aggregate structure of the primary particles to overcome van der Waals forces, by which forces the primary particles are held together to form the aggregate structure, whereby the ultradispersed primary particles are obtained in a colloidal dispersion on a large-scale basis at low cost without using any additive. In a method of manufacturing the ultradispersed primary particles, the wet-type milling method is carried out in a ball mill, preferably in combination with a high-energy ultrasonic-wave process carried out in a dispersing medium such as pure water, whereby a colloidal solution or slurry with a low-concentration of the primary particles ultradispersed in the dispersing medium is obtained.

A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.

A dynamic random access memory structure having a vertical floating body cell includes a semiconductor substrate having a plurality of cylindrical pillars, an upper conductive region positioned on a top portion of the cylindrical pillar, a body positioned below the upper conductive portion in the cylindrical pillar, a bottom conductive portion positioned below the body in the cylindrical pillar, a gate oxide layer surrounding the sidewall of the cylindrical pillar and a gate structure surrounding the gate oxide layer. The upper conductive region serves as a drain electrode, the bottom conductive region serves as a source electrode and the body can store carriers such as holes. Preferably, the dynamic random access memory structure further comprises a conductive layer positioned on the surface of the semiconductor substrate to electrically connect the bottom conductive regions in the cylindrical pillars.

A verification device (110) for verifying the identity of an article (114) is disclosed. The verification device (110) comprises: at least one illumination source (116) for illuminating at least one safety mark (124) of the article (114) with at least one light beam (122); at least one detector (118) adapted for detecting after an interaction of the light beam (122) with the safety mark (124), the detector (118) having at least one optical sensor (128), wherein the optical sensor (128) has at least one sensor region (130), wherein the optical sensor (128) is designed to generate at least one sensor signal in a manner dependent on an illumination of the sensor region (130) by the light beam (122), wherein the sensor signal, given the same total power of the illumination, is dependent on a beam cross-section of the light beam (122) in the sensor region (130); and at least one evaluation device (120) adapted for evaluating the sensor signal and for verifying the identity of the article (114) on the basis of the sensor signal. Further, a verification system (112), a method for verifying the identity of an article (114) and a use of an optical sensor (128) for verifying the identity of an article (114) are disclosed.

A photovoltaic element for conversion of electromagnetic radiation to electrical energy, having at least one first electrode, at least one n-semiconductive metal oxide, at least one dye for absorption of electromagnetic radiation, at least one organic hole conductor material, and at least one second electrode. The organic hole conductor material has an absorption spectrum which has a maximum in the ultraviolet or blue spectral region and, toward higher wavelengths, an absorption edge declining with wavelength and having a characteristic wavelength λ_HTL. A decadic absorbance of the hole conductor material at a wavelength λ_HTL within the declining absorption edge is 0.3. The photovoltaic element includes a longpass filter, which has a transmission edge rising with wavelength and having a characteristic wavelength λ_LP. A transmission of the longpass filter at λ_LP is 50% of a maximum transmission of the longpass filter, where λ_HTL−30 nm≦λ_LP≦λ_HTL+30 nm.

Disclosed is a dye-sensitized oxide semiconductor electrode comprising an electrically conductive substrate, an oxide semiconductor film provided on a surface of said electrically conductive substrate, and a sensitizing dye adsorbed on said film, wherein the oxide semiconductor film has been further treated with at least one silanizing agent comprising the partial structure R¹—Si—OR², wherein R¹ and R² are each independently alkyl groups, or R¹ is an alkyl group and R² is hydrogen or aryl. Also disclosed are solar cells comprising said electrode and a method for improving the efficiency of the solar cells. The solar cells exhibit improved efficiency and other beneficial properties compared to similar cells not having the passivated electrode.

A bifacial solar cell including a semiconductor substrate of a first conductivity type, a fixed charge layer, a first grid electrode, a semiconductor layer of a second conductivity type and a second grid electrode are provided. The fixed charge layer is located on a rear surface of the semiconductor substrate. The first grid electrode is located over the rear surface of the semiconductor substrate and electrically connected to the rear surface of the semiconductor substrate by penetrating through the fixed charge layer. The semiconductor layer is located on the front surface of the semiconductor layer. The second grid electrode is located over and electrically connected to the semiconductor layer.

A method is provided for forming a planar structure solar cell. Generally, the method forms a transparent conductive electrode, with a planar layer of a first metal oxide adjacent to the transparent conductive electrode. For example, the first metal oxide may be an n-type metal oxide. A semiconductor absorber layer is formed adjacent to the first metal oxide, comprising organic and inorganic materials. A p-type semiconductor hole-transport material (HTM) layer is formed adjacent to the semiconductor absorber layer, and a metal electrode is formed. adjacent to the HTM layer. In one aspect, the HTM layer is an inorganic material such as a p-type metal oxide. Some explicit examples of HTM materials include stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, and stoichiometric and non-stoichiometric copper (I) oxide. Also provide are planar solar cell devices.

Ionization efficiency is improved in Penning ionization capable of selective ionization. A metastable excited species of a rare gas is produced by introducing the rare gas into an ionization space and inducing an electrical discharge, a sample gas is introduced into the ionization space and Penning ionization is produced owing to collision between the sample gas and the metastable excited species of the rare gas. Electrons released from atoms or molecules positively ionized by Penning ionization are captured by applying a positive potential to an electron-capture electrode placed in the ionization space, and the atoms or molecules positively ionized are guided to a mass analyzer.

Process for charging a structure (1) formed from an insulating body (2) sandwiched between two electrodes (3, 4), characterized in that it comprises the following steps: A Faraday cage (9) is placed in contact with one of the electrodes (3) of the structure (1), the potential of the other electrode (4) being made equal to a reference potential. Electrons originating from a controlled electron emission device (6) are introduced into the Faraday cage (9), the electrons reaching the electrode (3) with which it is in contact in order to charge the structure (1). Application particularly for the determination of properties of insulating materials.

The invention discloses a division identification method and a device for data flow image frames, comprising the following steps: first, to preprocess the currently received data packet, and to store the corresponding image data acquired after the preprocessing of the data packet and the markers of the image data into a cache for accumulation; second, when the accumulation reaches a preset degree, to determine whether the image data accumulated in the cache forms an initial image identification region, and if so, then to identify the pattern of the image data in the initial image identification region. The invention avoids one-frame image restructuring of the received data and saves the data processing time, as well as dispenses with the pattern identification process of the needless image data, so as to ensure the identification speed; when processing high-pixel images, on the basis of ensuring the image identification quality, the invention can improve the identification rate to avoid data loss due to data accumulation.

The invention relates to the communication technology field, especially relates to a system, a method, and a device of realizing network interconnection. The problems of the prior art such as poor transmission performance and low bandwidth utilization rate of trans-WAN interconnection of a data center. The method comprises steps that a data packet, which is transmitted by a first server deployed a first data center to a second server deployed on a second data center, and is forwarded by a router, is received, and the header of the data packet comprises a quintuple; the source address of the quintuple of the data packet is modified to an address of a first proxy, and the target address is modified to an address of a second proxy; the modified data packet is transmitted to the second proxy deployed on the second data center, and the quintuple of the modified data packet is reduced by the second proxy into the quintuple before the modification, and the reduced data packet is transmitted to the second server, and the second server is used to respond to the reduced data packet.

The invention relates to a recombinant HSV (Herpes Simplex Virus) amplicon vector and application thereof. By using two replication deficient adenoviruses respectively carrying Cre and an operative linked component loxP-HSVoriS-pac-transgenic expression box-loxP, a novel HSV amplicon vector is recombined in a coinfection cell. Being different from the traditional HSV amplicon vector taking bacterial plasmids as a skeleton, the amplicon vector does not contain a bacteria copying sequence (colEorigin) and a resistance gene component and only contains oriS of HSV, a pac sequence and a transgenic expression box. The recombinant HSV amplicon vector disclosed by the invention is used for preparing a novel HSV amplicon vector, which does not contain the bacterial gene component and is used for various types of transgenic researches and tumour gene treatments, and preparing an adenovirus treatment preparation for specific anti-HSV virus and related diseases. The HSV amplicon vector recombined by the replication deficient adenovirus of the preparation in cells replicates itself by using infected wild HSV virus and competitively inhibits or permanently expresses the antiviral genes so as to inhibit replication of wild HSV virus. Therefore, the recombinant HSV amplicon vector can be used for resisting HSV infection and treating related diseases thereof.

An ionizer includes a fan for blowing air, the fan being provided in an air blowing port which opens in a case, and a plurality of discharge electrodes for generating positive and negative ions by corona discharge, the discharge electrodes being provided in the case at positions facing the air blowing port. The ionizer also includes a plurality of discharge electrode pairs each constituted by two discharge electrodes for generating ions of different polarities. When a tip-center distance denotes a distance from the electrode tip to the center of the air blowing port, the tip-center distances of the two discharge electrodes in the discharge electrode pairs are different from each other.

A head gimbal assembly has a gimbal suspension that includes a metal flexure bonded to a slider having a magnetic head element. This head gimbal assembly prevents damage from electrostatic discharge more efficiently. In the head gimbal assembly, a region of an oxide film on a slider-bonding surface of the flexure is completely or incompletely removed to form a film-removed region, and conductive adhesive resin is disposed between the film-removed region and the slider.

Embodiments of the invention relate generally to systems used to measure mercury in gaseous emissions. In one aspect, the invention is directed to the use of an inert covalently bonded material selected from silicon carbide (SiC), silicon oxides (SiO_n, n=1-2), silicon nitride (e.g. Si₃N₄), silicon boride (e.g. SiB₆), boron nitride (e.g. BN) and mixtures thereof as material for a thermal pyrolysis unit. In another aspect, the invention is directed to an improved pyrolyzer design, in which a thermal pyrolysis unit comprises a tailpiece that allows water to be injected at the heated exit of the thermal pyrolysis unit. In another aspect, the invention is directed to the use of a coalescing filter in a scrubbing unit. In another aspect, the invention is directed to the use of a hydrophobic filter element in a scrubbing unit. One or more of these elements may be used in a conditioning module of a continuous emissions monitoring system, for example.

The embodiment of the invention discloses a message fragmentation sending method and device and a fragmented message restoring method and device. The message fragmentation sending method comprises the steps that message header information, with the preset length, of a data link layer is generated; data, with the preset length, located at the beginning position of original messages, and the message header information with the preset length are combined to form fragmented information messages of the data link layer; the remaining data in the original messages except the data, with the preset length, located at the beginning position and the message header information with the preset length are combined to form remaining information messages of the data link layer; the fragmented information messages and fragmentation identification and fragmentation sequence numbers in the message header information of the remaining information messages are set. According to the message fragmentation sending method and device and the fragmented message restoring method and device, the phenomena that the messages are recombined by a network device which the messages pass through and fragmentations of the messages can not be suitable for all the messages are prevented, and therefore the transmission efficiency of the messages is improved.