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Method for improving efficiency of perovskite solar cell

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency, achieve the effects of improving photoelectric conversion efficiency, good conductivity, and improving efficiency

Inactive Publication Date: 2020-08-28
CHENDU NEW KELI CHEM SCI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the low photoelectric conversion efficiency of current trans-PSC devices, the present invention proposes a method for improving the efficiency of perovskite solar cells, thereby effectively reducing the internal defects of the crystal structure of the perovskite absorbing layer and improving the efficiency of perovskite solar cells. Internal carrier transfer efficiency, thereby improving the photoelectric conversion efficiency of solar cells

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) On the ITO glass substrate, the Li-containing + , Mg 2+ A nickel oxide precursor solution was thermally sprayed to deposit a layer of lithium-magnesium heavily doped nickel oxide as a hole transport layer at a temperature of 550°C, an annealing time of 1.5h, and a mass ratio of nickel oxide, lithium, and magnesium of 100:7:12. Then methylamine iodide and lead iodide were added into the DMF solvent according to the molar ratio of 2:1.5 and mixed evenly to obtain a perovskite precursor solution A with a mass fraction of 45%, and then the perovskite precursor solution A was spin-coated on the air On the hole transport layer, during spin coating, control the rotation rate of 400rpm and pre-spin for 12s. After the sol is spread, spin coating at a rotation rate of 2000rpm for 35s to obtain a perovskite film;

[0034] (2) Add methylammonium iodide and lead iodide into the DMF solvent in a molar ratio of 1:1.5 and mix evenly to obtain a perovskite precursor solution B with...

Embodiment 2

[0036] (1) On the ITO glass substrate, the Li-containing + , Mg 2+ A nickel oxide precursor solution was thermally sprayed to deposit a layer of lithium-magnesium heavily doped nickel oxide as a hole transport layer at a temperature of 520°C, an annealing time of 2 h, and a mass ratio of nickel oxide, lithium, and magnesium of 100:4:7, and then Add methylamine iodide and lead iodide into the DMF solvent according to the molar ratio of 2:1.2 and mix evenly to obtain a perovskite precursor solution A with a mass fraction of 42%, and then spin-coat the perovskite precursor solution A on the hole On the transfer layer, during spin coating, control the rotation rate of 300rpm and pre-spin for 14s. After the sol is spread, spin coating at a rotation rate of 1500rpm for 38s to obtain a perovskite film;

[0037] (2) Methylammonium iodide and lead iodide were added to the DMF solvent in a molar ratio of 1:1.2 and mixed evenly to obtain a perovskite precursor solution B with a mass fra...

Embodiment 3

[0039] (1) On the ITO glass substrate, the Li-containing + , Mg 2+ A nickel oxide precursor liquid was thermally sprayed to deposit a layer of lithium-magnesium heavily doped nickel oxide as a hole transport layer at a temperature of 580°C, an annealing time of 1 h, and a mass ratio of nickel oxide, lithium, and magnesium of 100:10:17, and then Add methylamine iodide and lead iodide into the DMF solvent according to the molar ratio of 2:1.8 and mix evenly to obtain a perovskite precursor solution A with a mass fraction of 48%, and then spin-coat the perovskite precursor solution A on the hole On the transfer layer, during spin coating, control the rotation rate of 500rpm and pre-spin for 11s. After the sol is spread, spin coating at a rotation rate of 2500rpm for 32s to obtain a perovskite film;

[0040] (2) Add methylammonium iodide and lead iodide into the DMF solvent at a molar ratio of 1:1.8 and mix evenly to obtain a perovskite precursor solution B with a mass fraction o...

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Abstract

The invention provides a method for improving the efficiency of a perovskite solar cell. The method comprises the following steps: depositing a layer of lithium-magnesium heavily doped nickel oxide asa hole transport layer on an ITO glass substrate; then respectively spin-coating the surface with a perovskite precursor solution A and a doped precursor solution, wherein the perovskite precursor solution A is prepared by adding methylamine iodine and lead iodide into a DMF solvent and uniformly mixing, and the doped precursor solution is prepared by adding bismuth nitrate, potassium bromide anda guanidyl catalyst into a perovskite precursor solution B prepared from methylamine iodine, lead iodide and a DMF solvent. According to the method provided by the invention, a perovskite absorptionlayer with a double-layer structure is formed by adding a secondary growth process on the basis of an original crystal growth process, so that the carrier transfer efficiency in perovskite is effectively improved, and the photoelectric conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for improving the efficiency of perovskite solar cells. Background technique [0002] As we all know, the energy issue is a major driving force for the development of material science and technology. The recycling of renewable energy has become an increasingly important demand in today's society, and the utilization of solar energy is the first to bear the brunt. As a clean energy source, solar cells have been a hot spot in scientific research since the 1950s, including how to improve photoelectric conversion efficiency, how to reduce costs and marketization, etc. Solar cells have been developed to the fourth generation so far, they are the first generation of crystalline silicon solar cells, the second generation of compound thin film solar cells, the third generation of polymer solar cells and the fourth generation of photosensitive solar cells. In recent years, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/00H10K71/12H10K71/30H10K30/30H10K2102/101Y02E10/549
Inventor 陈庆廖健淞杨洁陈涛白涛
Owner CHENDU NEW KELI CHEM SCI CO LTD
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