48 results about "Radioactive isotope source" patented technology

A micro-power generator, comprises an electrically insulating substrate; a semiconductor layer affixed to the substrate; electrodes affixed to the semiconductor layer for collecting electrical charges emitted by a radioisotope source; a radio-isotope source interposed between the electrodes; and electrical circuitry operably coupled to the electrodes for transforming the electrical charges into a controlled output.

The invention discloses a SiC ring electrode PIN-type nuclear battery and a manufacturing method thereof, which are mainly used for solving the problem that the conversion efficiency of the SiC PIN-junction battery in the prior art is lower. The SiC ring electrode PIN-type nuclear battery comprises a radioactive isotope source layer (1), a SiO2 passivation layer (3), a SiO2 compact insulation layer (2), a p-type ohmic contact electrode (4), a p-type SiC epitaxial layer (5) with the doping concentration of 1*1019-5*1019cm<-3>, an n-type SiC epitaxial layer (6) with the doping concentration of 1*1015-5*1015cm<-3>, an n-type SiC substrate (7) with the doping concentration of 1*1018-7*1018cm<-3> and an n-type ohmic contact electrode (8). A plurality of ring structures the centers of which arerings and the peripheries of which take the centers as circle centers are adopted in the p-type ohmic contact electrode, the rings are connected through a plurality of rectangular strips, a pluralityof pins are reserved on the peripheries of the rings, and the isotope source layer (1) covers the surface of the p-type ohmic contact electrode (4). The SiC ring electrode PIN-type nuclear battery has the advantage of high energy conversion efficiency and can be used as an MEMS (Micro-electromechanical System) on-chip power supply, a cardiac pacemaker power supply and a mobilephone standby power supply.

The invention discloses a silicon carbide gridding electrode PIN type nuclear battery and a manufacturing method thereof. By the silicon carbide gridding electrode PIN type nuclear battery and the manufacturing method thereof, the problem of low conversion efficiency during the manufacturing of silicon carbide PIN nucleus batteries in the prior art is solved. The silicon carbide gridding electrode PIN type nuclear battery comprises a radioactive isotope source layer (1), a SiO2 compact insulating layer (2), a SiO2 passivation layer (3), a p type ohmic contact electrode (4), a p type SiC epitaxial layer (5) of which the doping density is between 1*10<19> and 5*10<19>cm<-3>, an n type SiC epitaxial layer (6) of which the doping density is between 1*10<15> and 5*10<15>cm<-3>, an n type SiC substrate (7) of which the doping density is between 1*10<18> and 7*10<18>cm<-3> and an n type ohmic contact electrode (8), wherein the p type ohmic contact electrode (4) consists of a plurality of identical square grids, the square grids are formed by partitioning a plurality of transverse rectangular strips and a plurality of longitudinal rectangular strips, and a plurality of pins are reserved at the periphery of the integral grid electrode; and the radioactive isotope source layer (1) covers the surface of the p type ohmic contact electrode (4). The silicon carbide gridding electrode PIN type nuclear battery is high in energy conversion efficiency, and can be used as micro-electromechanical system (MEMS) on-chip power supplies, cardiac pacemaker power supplies and mobile standby power supplies.

A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

The invention discloses a carborundum based fingered Schottky contact nuclear battery and a fabricating method thereof, mainly solving the problems of difficult fabrication process of a carborundum pn nodule battery and low efficiency of a Schottky nodule battery in the prior art. The carborundum based fingered Schottky contact nuclear battery sequentially comprises a bonding layer (1), a radioactive isotope source layer (3), a fingered semitransparent Schottky contact layer (2), an n type SiC epitaxial layer (5) with doping concentration of 5*1015-5*1015cm<-3>, an n type SiC substrate (6) with doping concentration of 5*1017-5*1018cm<-3> and an ohmic contact electrode (7), wherein an SiO2 passivation layer (4) surrounds the radioactive isotope source layer. The fingered semitransparent Schottky contact layer (2) comprises one horizontal finger strip and a plurality of vertical finger strips, wherein all the vertical finger strips are positioned at one side of the horizontal finger strip, and the radioactive isotope source layer (3) is positioned on the epitaxial layer (5) between the vertical finger strips and the horizontal finger strip. The invention has the advantages of little energy loss and high energy conversion efficiency, and can be used as an on-chip power supply of an MEMS (Micro-electromechanical System), a cardiac pacemaker power supply and a mobile phone standby power supply.

The invention relates to a composite shielding material with a neutron shielding effect, and is applied to neutron shielding in the fields of various types of reactors, accelerators, radioactive isotope sources and the like. The composite shielding material comprises the following components in mass percentage: 91 parts of polyethylene, 6 parts of boron carbide and 3 parts of processing aid. The composite shielding material has the advantages of good shielding performance, strong radiation resistance, good mechanical properties and the like.

The invention discloses a method for measuring the position of radioactive guide instrument type double sleeve for dynamically testing oil field oil and water well oil pipe transmission type perforations, which is realized by an aboveground control system and an underground test system. A measuring device consists of a large sleeve, a small sleeve, a well-measuring cable, a gyroscope, a double gamma instrument and a radioactive guide instrument, wherein the gyroscope, the double gamma instrument and the radioactive guide instrument are connected with each other through the well-measuring cable. The measuring method comprises the steps of: firstly, changing radioactive isotope source of the double gamma instrument to be out of the instrument from the inner part of the lower end of the double gamma instrument; filling the radioactive isotope source in a self-made guide instrument to be sealed; connecting the guide instrument with a ground control system through the well-measuring cable; connecting the gyroscope in an assembly instrument with the double gamma instrument through a connecting device at the ground; correcting after connecting; and connecting the instrument with the ground control system through the well-measuring cable. The method solves the problem of the bad measurement accuracy of the existing positioning device in the prior art. The method can be widely used for dynamically testing the oil field oil and water well oil pipe transmission type perforations.

The invention discloses a silicon carbide Schottky junction type nuclear cell with a vanadium-doped I layer and a production method of the silicon carbide Schottky junction type nuclear cell, mainly solving the problem of lowered energy conversion efficiency in the prior art. The Schottky junction type nuclear cell provided by the invention comprises an n-type ohmic contact electrode (8), an n-type SiC substrate sample (7) with a doping concentration of 1*10<18>-7*10<18>cm<-3>, an n-type SiC epitaxial layer (6), an SiO2 passivation layer (5), a Schottky metal contact layer (4), a Schottky contact electrode (3), a bonding layer (2) and a radioisotope source layer (1) from bottom to top, wherein the n-type SiC epitaxial layer (6) which has the doping concentration of 1*10<13>-5*10<14>cm<-3> is formed through injecting vanadium ions of which the energy is 2000 KeV-2500 KeV and the dosage is 5*10<13>-1*10<15>cm<-2>. The silicon carbide Schottky junction type nuclear cell with the vanadium-doped I layer has the advantages of high electron-hole pair collection ratio, high open circuit voltage and high energy conversion efficiency, and can be served as an on-chip power supply of a microsystem, a power supply of a cardiac pacemaker and an emergency power supply of a mobile phone.

The invention discloses a method for manufacturing a silicon carbide Schottky junction nuclear battery. The battery sequentially comprises an n-type ohm contact electrode 8, an n-type SiC substrate 7, an n-type SiC epitaxial layer 6, a SiO2 passivation layer 5, a Schottky metal contact layer 4, a Schottky contact electrode 3, a bonding layer 2 and a radioactive isotope source layer 1 from bottom to top. The steps for forming the n-type SiC epitaxial layer 6 include injecting niobium ions with the energy ranging from 2000KeV to 2500KeV and the dose of 5*1013-1*1015cm-2 into an initial n-type SiC epitaxial layer, carrying out annealing for 20-40 minutes at the high temperature ranging from 1450 DEG C to 1650 DEG C, and accordingly obtaining the n-type SiC epitaxial layer with the doping concentration of 1*1013-5*1014cm-3. According to the method, the current carrier concentration of the n-type epitaxial layer can be reduced, the width of the depletion region is increased, the collection rate of generated electron hole pairs is improved, and therefore open-circuit voltage and energy conversion efficiency of a device are improved.

A self-powered sensor (e.g., 100, 180, 220, 400) can wake-up systems requiring a trigger signal to wake-up circuits or systems in power-sleep mode, conserving the battery power for emergency computations and communications. In a humidity sensor embodiment 100, radioisotope generated voltage biases are employed to power sensor capacitors to realize self-powered sensors. A first self-powered capacitor biasing architecture 160 is based on changes in the leakage resistance of the polymer capacitor 110, and a second self-powered capacitor biasing architecture 140 uses changes in the capacitance of the polymer capacitor. Another sensor embodiment uses changes in the capacitance or leakage resistance of the sensor capacitor to modulate conductance of a MOSFET 114, realizing an easily readable electronic output signal. A temperature sensor embodiment 180 and a MEMS cantilever structure based fissile material proximity sensor embodiment 400 are also disclosed.

The present disclosure is directed to a nuclear thermionic avalanche cell (NTAC) systems and related methods of generating energy comprising a radioisotope core, a plurality of thin-layered radioisotope sources configured to emit high energy beta particles and high energy photons, and a plurality of NTAC layers integrated with the radioisotope core and the radioisotope sources, wherein the plurality of NTAC layers are configured to receive the beta particles and the photons from the radioisotope core and sources, and by the received beta particles and photons, free up electrons in an avalanche process from deep and intra bands of an atom to output a high density avalanche cell thermal energy through a photo-ionic or thermionic process of the freed up electrons.

The invention discloses a silicon carbide Schottky junction nuclear battery. The silicon carbide Schottky junction nuclear battery sequentially comprises an n-type ohm contact electrode 8, an n-type SiC substrate 7, an n-type SiC epitaxial layer 6, a SiO2 passivation layer 5, a Schottky metal contact layer 4, a Schottky contact electrode 3, a bonding layer 2 and a radioactive isotope source layer 1 from bottom to top. The doping concentration of the n-type SiC substrate 7 is 1*1018-7*1018cm-3, and the doping concentration of the n-type SiC epitaxial layer 6 is 1*1013-5*1014cm-3 due to the fact that niobium ions with the energy ranging from 2000KeV to 2500KeV and the dose of 5*1013-1*1015cm-2 are injected into the n-type SiC epitaxial layer 6. The epitaxial layer is low in current carrier concentration, the width of a depletion region is large, the collection rate of generated electron hole pairs is high, and accordingly open-circuit voltage and energy conversion efficiency of a device are high.

The invention discloses a silicon carbide-based grid-shaped Schottky contact type nuclear battery and a manufacturing method thereof. The invention mainly solves the problems that in the prior art, a silicon carbide-based pn junction nuclear battery has difficult manufacturing process, and a Schottky junction nuclear battery has low efficiency. The nuclear battery of the invention sequentially comprises a bonding layer (1), a radioactive isotope source layer (3), a grid-shaped semitransparent Schottky contact layer (2), an n type SiC epitaxial layer (5) of which the doping concentration is 1*1015-5*1015cm<-3>, an n type SiC substrate (6) of which the doping concentration is 1*1018-7*1018cm<-3> and an ohmic contact electrode (7) from top to bottom, wherein a SiO2 passivation layer (4) is formed around the radioactive isotope source layer; the Schottky contact layer (2) comprises a horizontal grid bar and a plurality of vertical grid bars, wherein the horizontal grid bar is positioned in the middle position of each vertical grid bar; and the radioactive isotope source layer is positioned on the epitaxial layer (5) between every two vertical grid bars. The nuclear battery of the invention has the advantages of small energy loss and high energy conversion efficiency and can be used as an on-chip power source of an MEMS, a power source of a cardiac pacemaker or a spare power sourceof a mobile phone.

The invention discloses a PIN-type isotope nuclear battery. The PIN-type isotope nuclear battery comprises a radioactive isotope source layer 1, a SiO2 passivation layer 2, a SiO2 dense insulating layer 3, a p-type Ohmic contact electrode 4, a p-type SiC epitaxial layer 5, an n-type SiC epitaxial layer 6, an n-type SiC substrate 7 and an n-type Ohmic contact electrode 8. The PIN-type isotope nuclear battery is characterized in that the doping concentration of the p-type SiC epitaxial layer 5 is in the range from 1*10<19> cm<-3> to 5*10<19> cm<-3>, the doping concentration of the n-type SiC substrate 7 is in the range from 1*10<18> cm<-3> to 7*10<18> cm<-3>, and the n-type SiC epitaxial layer 6 is formed by injecting niobium ions having energy which is in the range from 2000KeV to 2500KeV and having a dosage which is in the range from 5*10<13> cm<-2> to 1*10<15> cm<-2>, wherein the doping concentration of the n-type SiC epitaxial layer 6 is in the range from 1*10<13> cm<-3> to 5*10<14> cm<-3>. According to the invention, the carrier concentration of the intrinsic layer can be reduced and the depletion region width can be increased, so the collection efficiency of generated electron hole pairs can be improved, so that the device open-circuit voltage and energy conversion efficiency can be improved.

The invention, which belongs to the field of radiation detection technology, in particular relates to a low-temperature thermometer based on a scintillation crystal and temperature calibration and measurement methods thereof. The low-temperature thermometer is composed of a temperature measurement module, a power module, a signal collection and calculation module, and a data acquisition and display module. The temperature measurement module includes a lens hood, a photoelectric device and signal amplification module, a scintillation crystal, a radioactive Isotope source, a metal plate, a scintillation crystal, and a photoelectric device and signal amplification module, wherein the photoelectric device and signal amplification module, the scintillation crystal, the radioactive Isotope source, the metal plate, the scintillation crystal, and the photoelectric device and signal amplification module are arranged successively in the lens hood from bottom to top in a coaxial coupling manner.The power module is connected with the two photoelectric device and signal amplification modules respectively. The input terminal of the signal collection and calculation module is connected with theoutput terminal of the two photoelectric device and signal amplification modules respectively; and the output terminal of the signal collection and calculation module is connected with the data acquisition and display module. A novel solution is provided for temperature detection in the extremely-low-temperature environment in the universe.

The invention discloses a method for manufacturing a PIN nuclear isotope battery. The battery comprises a radioactive isotope layer (1), a SiO2 passivation layer (2), a SiO2 dense insulating layer (3), a p-type ohmic contact electrode (4), a p-type SiC epitaxial layer (5), an n-type SiC epitaxial layer (6), an n-type SiC substrate (7) and an n-type ohmic contact electrode (8). The manufacturing method includes the first step of injecting niobium ions into an initial n-type SiC epitaxial layer, wherein the energy of the niobium ions is 2000KeV-2500KeV, and the injection amount is 5*10<13>-1*10<15>centimeter<-2>, and the second step of carrying out thermal annealing under high temperature of 1450-1650 DEG C for 20-40 minutes to obtain the n-type SiC epitaxial layer with the doping concentration of 1*10<13>-5*10<14>centimeter<-3>. Through the method, the carrier concentration of an intrinsic layer is lowered, the width of a depletion region is enlarged, the collection efficiency of generated electron hole pairs is improved, and furthermore open-circuit voltage and energy conversion efficiency of a device are improved.

The invention discloses an H-3 silicon carbide isotope battery and a manufacturing method thereof. The isotope battery comprises an N-type highly-doped SiC substrate and a P-type SiC ohmic contact doped region from bottom to top, wherein a first N-type SiC epitaxial layer is arranged in a partial region on the P-type SiC ohmic contact doped region; a second N-type SiC epitaxial layer is arranged on the first N-type SiC epitaxial layer; a P-type ohmic contact electrode is arranged in a region, except the first N-type SiC epitaxial layer, on the P-type SiC ohmic contact doped region; an N-type ohmic contact doped region is arranged partially in a region on the second N-type SiC epitaxial layer; an N-type ohmic contact electrode is arranged on the N-type ohmic contact doped region; a SiO2 passivation layer is arranged in a region, except the N-type ohmic contact doped region, on the second N-type SiC epitaxial layer; and an H-3 radioactive isotope source is arranged on the SiO2 passivation layer. The design is novel and reasonable, the problem of irradiation generated carrier recombination loss of H-3 on the surface can be effectively solved, and the output power and the energy conversion efficiency of the isotope battery are effectively improved.

A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

The invention discloses a silicon carbide schottky junction type nuclear battery comprising a niobium doped n-type epitaxial layer. The silicon carbide schottky junction type nuclear battery comprises an n-type Ohmic contact electrode 8, an n-type SiC substrate 7, an n-type SiC epitaxial layer 6, a SiO2 passivation layer 5, a schottky metal contact layer 4, a schottky contact electrode 3, a bonding layer 2 and a radioactive isotope source layer 1 successively from bottom to top, wherein the n-type SiC epitaxial layer 6 is formed by injecting niobium ions having energy which is in the range from 2000KeV to 2500KeV and having a dosage which is in the range from 5*10<13> cm<-2> to 1*10<15> cm<-2>, wherein the doping concentration of the n-type SiC epitaxial layer 6 is in the range from 1*10<13> cm<-3> to 5*10<14> cm<-3>. According to the invention, the carrier concentration of the epitaxial layer is low and the depletion region width is wide, so the collection efficiency of generated electron hole pairs can be improved, so that the device open-circuit voltage and energy conversion efficiency can be improved.

Applicators for HDR brachytherapy for topical skin treatment which employ multiple channels for radioisotope sources, oriented by the applicator generally parallel to each other and to a desired treatment area skin surface. These applicators provide good radiation exposure uniformity. Filtration of undesirable low energy radiation may be employed using an attached filter element. The applicators are particularly adapted for the treatment of squamous and basal cell skin cancers or other skin lesions. The applicators may provide two or more source guides in various sizes and shapes are described.

A Pm-147 silicon carbide slowly varying Schottky isotope battery comprises a substrate, an N-type Ohmic contact electrode is arranged at the lower portion of the substrate, the upper portion of the substrate is provided with a first N-type SiC epitaxial layer, the upper portion of the first N-type SiC epitaxial layer is provided with a second N-type SiC epitaxial layer, the top portion of the second N-type SiC epitaxial layer is provided with a plurality of Schottky electrodes, a SiO2 passivation layer is arranged at an area where the Schottky electrodes are removed at the top portion of the SiC epitaxial layer, and a Pm-147 radioactive isotope source is arranged at the upper portion of the SiO2 passivation layer. The Pm-147 silicon carbide slowly varying Schottky isotope battery employs two N-type layers with different dosage concentration to replace a routine N type, an electric field is introduced in a diffusion area of an irradiation photo-induced carrier to convert the diffusion motion of the carrier to combination of diffusion motion and drift motion and facilitate reduction of the composite loss of the photo-induced carrier so as to improve the output power of the battery.

The invention discloses a manufacturing method of a silicon carbide schottky junction type nuclear battery including a niobium-doped n-type epitaxial layer. The battery sequentially comprises an n-type ohmic contact electrode 8, an n-type SiC substrate 7, an n-type SiC epitaxial layer 6, an SiO2 passivation layer 5, a schottky metal contact layer 4, a schottky contact electrode 3, a bonding layer 2 and a radioactive isotope source layer 1 from down to top, wherein the n-type SiC epitaxial layer 6 is formed by injecting 2000KeV-2500KeV energy for the initial n-type SiC epitaxial layer, injecting 5*1013-1*1015cm-2 niobium ions and then performing thermal annealing at the high temperature of 1450-1650 DEG C for 20-40 minutes, wherein the dosage concentration of the n-type SiC epitaxial layer is 1*1013-5*1014cm-3. By adopting the manufacturing method, the carrier concentration of the n-type epitaxial layer can be reduced, the depletion region width can be increased, the collection efficiency of produced electron hole pairs can be improved, and further the open-circuit voltage and energy conversion efficiency of a device can be improved.

The invention discloses a PIN-type isotope nuclear battery comprising a niobium doped n-type SiC epitaxial layer. The PIN-type isotope nuclear battery comprises a radioactive isotope source layer 1, a SiO2 passivation layer 2, a SiO2 dense insulating layer 3, a p-type Ohmic contact electrode 4, a p-type SiC epitaxial layer 5, an n-type SiC epitaxial layer 6, an n-type SiC substrate 7 and an n-type Ohmic contact electrode 8. The n-type SiC epitaxial layer 6 is formed by injecting niobium ions having energy which is in the range from 2000KeV to 2500KeV and having a dosage which is in the range from 5*10<13> cm<-2> to 1*10<15> cm<-2>, wherein the doping concentration of the n-type SiC epitaxial layer 6 is in the range from 1*10<13> cm<-3> to 5*10<14> cm<-3>. According to the invention, the carrier concentration of the intrinsic layer can be reduced and the depletion region width can be increased, so the collection efficiency of generated electron hole pairs can be improved, so that the device open-circuit voltage and energy conversion efficiency can be improved.

The invention relates to the technical field of nuclear batteries, and particularly discloses a 63Ni or 147Pm isotope source beta radiation battery of a vacuum medium and an application system of the 63Ni or 147Pm isotope source beta radiation battery. The battery comprises a 63Ni or 147Pm radioactive isotope source, a sealing shell, a positive electrode and a negative electrode, the sealing shell is made of stainless steel, the positive electrode extends into a vacuum inner cavity in the sealing shell through an insulating sealing ring, the 63Ni or 147Pm radioactive isotope source is arranged in the vacuum inner cavity and connected with the positive electrode, and the inner wall of the sealing shell is uniformly coated with a coating layer of group I metal elements. The whole beta radiation battery disclosed by the invention is simple in internal structure, and no semiconductor is arranged in the whole beta radiation battery, so that a series of problems of output attenuation and the like caused by the fact that a semiconductor in an existing nuclear battery is easy to damage a threshold by radiation are effectively avoided. In addition, the application system alternately charges the secondary lithium battery through parallel connection and direct current transformation, the purpose of continuously collecting energy for centralized use is achieved, and the application value is very high.

The invention relates to the technical field of nuclear batteries, and particularly discloses a nuclear battery structure which comprises a first nuclear battery chip, a second nuclear battery chip and a radioactive isotope source layer positioned between the first nuclear battery chip and the second nuclear battery chip. Each of the first nuclear battery chip and the second nuclear battery chip comprises a first conductive type substrate, and a first conductive type epitaxial layer, a second conductive type epitaxial layer with a first doping concentration, a second conductive type epitaxial layer with a second doping concentration, a second conductive type ohmic contact layer and a metal bonding layer which are sequentially arranged on the first conductive type substrate. The radioactive isotope source layer is in contact with the metal bonding layer of the first nuclear battery chip and the metal bonding layer of the second nuclear battery chip, and a first conduction type ohmic contact layer is arranged on one surface, deviating from the radioactive isotope source layer, of the first conduction type substrate. The invention also discloses a preparation method of the nuclear battery. The nuclear battery structure provided by the invention can improve the energy conversion efficiency.

The invention discloses a high-dose yield circumferential irradiation ray tube which comprises a cylindrical supporting base, a plurality of cooling pipelines are arranged at the outer side of the supporting base, a circle of radiation conversion target is arranged at the inner side of the supporting base, and a charged particle emitter assembly and a high-voltage socket are further arranged in the radiation conversion target. A charged particle beam fairing is arranged at the upper end of the charged particle emitter assembly, a shielding fairing is arranged at the lower end of the charged particle emitter assembly, and the high-voltage socket is located between the charged particle emitter assembly and the shielding fairing. By means of the above structures, an irradiation source which is high in dose yield, large in radiation angle, good in radiation uniformity, long in service life and compact in structure can be obtained, a radioactive isotope source is replaced, the hidden dangerof radioactive substance leakage is eliminated, meanwhile, good mobility is achieved, and application of irradiation processing is popularized.