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A kind of h-3 silicon carbide pn type isotope battery and its manufacturing method

An isotope battery, H-3 technology, used in circuits, electrical components, and obtaining electrical energy from radioactive sources, etc., can solve the recombination loss of radiation-generated carriers, the shallow electron range, and the unavoidable loss of radiation-generated carriers. and other problems, to achieve the effect of improving energy conversion efficiency and packaging density, wide depletion region thickness, and high promotion and application value.

Active Publication Date: 2020-06-30
南京绿能芯耀科技有限公司
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Problems solved by technology

[0005] However, there are still many problems in the research of silicon carbide PN-type isotope cells using H-3. The biggest problem is how to avoid the recombination loss of irradiated carriers on the surface of the device.
like image 3 As shown, the range of electrons generated by H-3 is relatively shallow, and the peak is close to the device surface, and the loss of radiation-induced carriers caused by surface recombination is unavoidable

Method used

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  • A kind of h-3 silicon carbide pn type isotope battery and its manufacturing method
  • A kind of h-3 silicon carbide pn type isotope battery and its manufacturing method
  • A kind of h-3 silicon carbide pn type isotope battery and its manufacturing method

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Embodiment 1

[0058] A kind of manufacture method of H-3 silicon carbide PN type isotope cell, comprises the following steps:

[0059] Step 1, providing a substrate 1 composed of an N-type doped SiC substrate;

[0060] Step 2. Using chemical vapor deposition to epitaxially grow on the upper surface of the substrate described in step 1 with a doping concentration of 4×10 17 cm -3 , an N-type SiC epitaxial layer 2 with a thickness of 1.8 μm;

[0061] Step 3: Using chemical vapor deposition to epitaxially grow the upper surface of the N-type SiC epitaxial layer 2 with a doping concentration of 3×10 16 cm -3 , a P-type SiC epitaxial layer 3 with a thickness of 0.10 μm;

[0062] Step 4. Epitaxially grow the upper surface of the P-type SiC epitaxial layer 3 with a doping concentration of 1×10 by chemical vapor deposition. 19 cm -3 , a P-type SiC ohmic contact doped region 5 with a thickness of 0.2 μm;

[0063] Step 5, using reactive ion etching to etch away part of the P-type SiC ohmic con...

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Abstract

The invention discloses a H-3 silicon carbide PN-type isotope battery and a manufacturing method thereof. The structure of the isotope battery includes an N-type ohmic contact electrode, an N-type highly doped SiC substrate, and an N-type SiC epitaxial layer from bottom to top. , P-type SiC epitaxial layer, a P-type SiC ohmic contact doped layer is provided on the upper part of the P-type SiC epitaxial layer, and a P-type ohmic contact electrode is provided on the top of the P-type SiC ohmic contact doped layer. The upper part of the SiC epitaxial layer except the P-type ohmic contact doped region is provided with SiO 2 passivation layer, on SiO 2 An H‑3 radioisotope source is provided above the passivation layer. The invention has a novel and reasonable design, can effectively solve the problem of recombination loss of H-3 irradiated carriers on the surface, and effectively improves the output power and energy conversion efficiency of the isotope battery.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices and semiconductor technology, and in particular relates to an H-3 silicon carbide PN type isotope battery and a manufacturing method thereof. Background technique [0002] The isotope battery is an energy conversion device that converts nuclear radiation energy into electrical energy by using the radiovoltaic effect produced by charged particles produced by the decay of radioactive isotopes in semiconductor devices. Among many types of micro-energy sources, isotope batteries are regarded as the most ideal long-term energy sources for MEMS systems due to their high reliability, easy integration, and strong anti-interference. High output power is the prerequisite for the wide application of micronuclear batteries. However, due to the self-absorption effect and cost of isotope sources, it is difficult for micronuclear batteries to increase the output power by increasing the activity of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G21H1/06
CPCG21H1/06H01L31/022408H01L31/0312H01L31/1804
Inventor 张林王晓艳朱礼亚
Owner 南京绿能芯耀科技有限公司
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