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Pm-147 silicon carbide slowly varying Schottky isotope battery and manufacturing method thereof

An isotope battery, pm-147 technology, which is applied in the fields of obtaining electrical energy from radioactive sources, nuclear engineering, application of radioactive source radiation, etc. Compound loss, the effect of improving output power

Active Publication Date: 2018-12-07
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the I thickness is too thin, it will lead to a decrease in the number of carriers that may be absorbed
If the I layer is too thick, it will cause electrons to recombine too much before being collected by the substrate electrode

Method used

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  • Pm-147 silicon carbide slowly varying Schottky isotope battery and manufacturing method thereof
  • Pm-147 silicon carbide slowly varying Schottky isotope battery and manufacturing method thereof
  • Pm-147 silicon carbide slowly varying Schottky isotope battery and manufacturing method thereof

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Embodiment Construction

[0033] see figure 1 and figure 2 , a Pm-147 silicon carbide slow-change Schottky isotope cell, comprising a substrate 2, an N-type ohmic contact electrode 1 is arranged under the substrate 2, a first N-type SiC epitaxial layer 3 is arranged on the upper part of the substrate, and a first N-type SiC epitaxial layer 3 is arranged on the upper part of the substrate. A second N-type SiC epitaxial layer 4 is arranged on the top of the SiC epitaxial layer 3, and several Schottky electrodes 5 are arranged on the top of the second N-type SiC epitaxial layer 4, and the Schottky electrodes 5 are removed on the top of the second N-type SiC epitaxial layer 4. The area of ​​electrode 5 is provided with SiO 2 Passivation layer 6, in SiO 2 A Pm-147 radioactive isotope source 7 is arranged above the passivation layer 6 .

[0034] The total thickness of the first N-type SiC epitaxial layer 3 and the second N-type SiC epitaxial layer 4 is 14.5-39 μm; the doping concentration of the first N...

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Abstract

A Pm-147 silicon carbide slowly varying Schottky isotope battery comprises a substrate, an N-type Ohmic contact electrode is arranged at the lower portion of the substrate, the upper portion of the substrate is provided with a first N-type SiC epitaxial layer, the upper portion of the first N-type SiC epitaxial layer is provided with a second N-type SiC epitaxial layer, the top portion of the second N-type SiC epitaxial layer is provided with a plurality of Schottky electrodes, a SiO2 passivation layer is arranged at an area where the Schottky electrodes are removed at the top portion of the SiC epitaxial layer, and a Pm-147 radioactive isotope source is arranged at the upper portion of the SiO2 passivation layer. The Pm-147 silicon carbide slowly varying Schottky isotope battery employs two N-type layers with different dosage concentration to replace a routine N type, an electric field is introduced in a diffusion area of an irradiation photo-induced carrier to convert the diffusion motion of the carrier to combination of diffusion motion and drift motion and facilitate reduction of the composite loss of the photo-induced carrier so as to improve the output power of the battery.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and semiconductor technology, in particular to a Pm-147 silicon carbide slow-change Schottky isotope battery and a manufacturing method thereof. Background technique [0002] The isotope battery is an energy conversion device that converts nuclear radiation energy into electrical energy by using the radiovoltaic effect produced by charged particles produced by the decay of radioactive isotopes in semiconductor devices. Among many types of micro-energy sources, isotope batteries are regarded as the most ideal long-term energy sources for MEMS systems due to their high reliability, easy integration, and strong anti-interference. High output power is the prerequisite for the wide application of micronuclear batteries. However, due to the self-absorption effect and cost of isotope sources, it is difficult for micronuclear batteries to increase the output power by increasing the activity ...

Claims

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Application Information

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IPC IPC(8): G21H1/06
CPCG21H1/06
Inventor 张林程鸿亮胡笑钏
Owner CHANGAN UNIV
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