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Method for manufacturing silicon carbide Schottky junction nuclear battery

A manufacturing method and nuclear battery technology, applied in nuclear engineering, the application of radioactive source radiation, and obtaining electric energy from radioactive sources, etc., can solve the problems of low energy conversion efficiency and large energy loss of incident particles, etc., and increase the depletion area The effect of increasing the width, improving the open circuit voltage and energy conversion efficiency, and increasing the collection rate

Inactive Publication Date: 2014-04-16
溧阳市浙大产学研服务中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Schottky contact layer of the Schottky nodule battery covers the entire battery area. After the incident particles reach the surface of the device, they will be blocked by the Schottky contact layer. Only some particles can enter the interior of the device, while the particles entering the depletion region will It contributes to the output power of the battery. Therefore, the nuclear battery with this structure has a large energy loss of incident particles and low energy conversion efficiency.

Method used

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  • Method for manufacturing silicon carbide Schottky junction nuclear battery

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Step 1, epitaxial n-type epitaxial layer on SiC highly doped n-type substrate sample.

[0019] The selected doping concentration is 1×10 18 cm -3 The highly doped n-type SiC substrate 7, after cleaning, is epitaxially grown on the highly doped n-type SiC substrate with a thickness of 4um and an initial n-type epitaxial layer doped with nitrogen ions, and its doping concentration is 1×10 15 cm -3 , the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gases are silane and propane, the flow rates are 50sccm and 150sccm respectively, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0020] Step 2: For a nitrogen doping concentration of 1 x 10 15 cm -3 The initial n-type SiC epitaxial layer is implanted with niobium ions.

[0021] (2.1) The concentration of nitrogen doping is 1×10 15 cm -3 The initial n-type SiC epitaxial layer was implanted with niobium ions, and the conditions of the niobium ion implantation were: th...

Embodiment 2

[0037] Step 1: Epitaxial n-type epitaxial layer on SiC highly doped n-type substrate sample.

[0038] The selected doping concentration is 5×10 18 cm -3 The highly doped n-type SiC substrate 7, after cleaning, is epitaxially grown on the highly doped n-type SiC substrate with a thickness of 3um and an initial n-type epitaxial layer doped with nitrogen ions, and its doping concentration is 5×10 15 cm -3, the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gases are silane and propane, the flow rates are 50sccm and 150sccm respectively, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0039] Step 2: The concentration of nitrogen doping is 5×10 15 cm -3 The initial n-type SiC epitaxial layer is implanted with niobium ions.

[0040] (2.1) The concentration of nitrogen doping is 5×10 15 cm -3 The initial n-type SiC epitaxial layer was implanted with niobium ions, and the conditions of the niobium ion implantation were: the ...

Embodiment 3

[0056] Step A: Epitaxial n-type epitaxial layer on SiC highly doped n-type substrate sample.

[0057] The selected doping concentration is 7×10 18 cm -3 The highly doped n-type SiC substrate 7, after cleaning, epitaxially grows an initial n-type epitaxial layer doped with nitrogen ions in a thickness of 5um on the highly doped n-type SiC substrate, and its doping concentration is 2×10 15 cm -3 , the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gases are silane and propane, the flow rates are 50sccm and 150sccm respectively, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0058] Step B: For a nitrogen doping concentration of 2 x 10 15 cm -3 The initial n-type SiC epitaxial layer is implanted with niobium ions.

[0059] (B1) The concentration of nitrogen doping is 2×10 15 cm -3 The initial n-type SiC epitaxial layer was implanted with niobium ions, and the conditions of the niobium ion implantation were: the energy o...

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Abstract

The invention discloses a method for manufacturing a silicon carbide Schottky junction nuclear battery. The battery sequentially comprises an n-type ohm contact electrode 8, an n-type SiC substrate 7, an n-type SiC epitaxial layer 6, a SiO2 passivation layer 5, a Schottky metal contact layer 4, a Schottky contact electrode 3, a bonding layer 2 and a radioactive isotope source layer 1 from bottom to top. The steps for forming the n-type SiC epitaxial layer 6 include injecting niobium ions with the energy ranging from 2000KeV to 2500KeV and the dose of 5*1013-1*1015cm-2 into an initial n-type SiC epitaxial layer, carrying out annealing for 20-40 minutes at the high temperature ranging from 1450 DEG C to 1650 DEG C, and accordingly obtaining the n-type SiC epitaxial layer with the doping concentration of 1*1013-5*1014cm-3. According to the method, the current carrier concentration of the n-type epitaxial layer can be reduced, the width of the depletion region is increased, the collection rate of generated electron hole pairs is improved, and therefore open-circuit voltage and energy conversion efficiency of a device are improved.

Description

technical field [0001] The invention belongs to the cross technical field of nuclear technology and microelectronics, and in particular relates to a method for manufacturing a silicon carbide Schottky junction nuclear battery, which can directly convert nuclear energy emitted by isotopes into electric energy. technical background [0002] In 1953, it was discovered that β particles produced by isotope decay can generate electron-hole pairs in semiconductors, and this phenomenon is called β voltage effect. In 1957, people first applied the β voltage effect to the power supply, and successfully manufactured the first isotope micro-battery. Since 1989, GaN, GaP, AlGaAs, polysilicon and other materials have been used as materials for β-Voltaic batteries. With the preparation of the wide bandgap semiconductor material SiC and the advancement of process technology, since 2006, there have been reports on SiC-based isotope micro-batteries at home and abroad. [0003] Chinese paten...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21H1/06
Inventor 梅欣
Owner 溧阳市浙大产学研服务中心有限公司
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