Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

PIN-type isotope nuclear battery comprising niobium doped n-type SiC epitaxial layer

A technology of epitaxial layer and nuclear battery, which is applied in the cross field of nuclear science and technology and microelectronics technology, can solve the problems of immature technology, low energy conversion efficiency, small depletion region width, etc., and improve the open circuit voltage and energy conversion efficiency , Improve energy conversion efficiency, increase the effect of depletion region width

Inactive Publication Date: 2014-03-19
溧阳市浙大产学研服务中心有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this structure, the substrate is an n-type highly doped substrate, and the process of growing an epitaxial layer on it is immature, which easily introduces surface defects, increases device leakage current, and has a low energy conversion rate. At the same time, p-type low-doped The SiC layer is formed by unintentional doping epitaxial growth, the doping concentration is too high, the width of the depletion region obtained is too small, the generated carriers cannot be collected completely, the open circuit voltage of the device becomes smaller, and the energy conversion efficiency decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • PIN-type isotope nuclear battery comprising niobium doped n-type SiC epitaxial layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Step 1: Epitaxial n-type epitaxial layer on SiC highly doped n-type substrate sample.

[0013] The selected doping concentration is 1×10 18 cm -3 The highly doped n-type SiC substrate 7, after cleaning, is epitaxially grown on the highly doped n-type SiC substrate with a thickness of 4um and an initial n-type epitaxial layer doped with nitrogen ions, and its doping concentration is 1×10 15 cm -3 , the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0014] Step 2: For a doping concentration of 1×10 15 cm -3 The initial n-type SiC epitaxial layer is implanted with niobium ions.

[0015] (2.1) For a doping concentration of 1×10 15 cm -3 The initial n-type SiC epitaxial layer was implanted with niobium ions, and the conditions of the niobium ion implantation were: the energy of ion implantation was 2200KeV, and the implantation dose was 5×10...

Embodiment 2

[0035] Step 1: Epitaxial n-type epitaxial layer on SiC highly doped n-type substrate sample.

[0036] The selected doping concentration is 5×10 18 cm -3The highly doped n-type SiC substrate 7, after cleaning, is epitaxially grown on the highly doped n-type SiC substrate with a thickness of 3um and an initial n-type epitaxial layer doped with nitrogen ions, and its doping concentration is 5×10 15 cm -3 , the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0037] Step 2: For a doping concentration of 5×10 15 cm -3 The initial n-type SiC epitaxial layer is implanted with niobium ions.

[0038] (2.1) For a doping concentration of 5×10 15 cm -3 The initial n-type SiC epitaxial layer was implanted with niobium ions, and the conditions of the niobium ion implantation were: the energy of ion implantation was 2000KeV, and the implantation dose was 1×10 ...

Embodiment 3

[0058] Step A: Epitaxial n-type epitaxial layer on SiC highly doped n-type substrate sample.

[0059] The selected doping concentration is 7×10 18 cm -3 The highly doped n-type SiC substrate 7, after cleaning, is epitaxially grown on the highly doped n-type SiC substrate with a thickness of 5um and an initial n-type epitaxial layer doped with nitrogen ions, and its doping concentration is 2×10 15 cm -3 , the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0060] Step B: For a doping concentration of 2×10 15 cm -3 The initial n-type SiC epitaxial layer is implanted with niobium ions.

[0061] (B1) For a doping concentration of 2×10 15 cm -3 The initial n-type SiC epitaxial layer was implanted with niobium ions, and the conditions of the niobium ion implantation were: the energy of ion implantation was 2500KeV, and the implantation dose was 1×10 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a PIN-type isotope nuclear battery comprising a niobium doped n-type SiC epitaxial layer. The PIN-type isotope nuclear battery comprises a radioactive isotope source layer 1, a SiO2 passivation layer 2, a SiO2 dense insulating layer 3, a p-type Ohmic contact electrode 4, a p-type SiC epitaxial layer 5, an n-type SiC epitaxial layer 6, an n-type SiC substrate 7 and an n-type Ohmic contact electrode 8. The n-type SiC epitaxial layer 6 is formed by injecting niobium ions having energy which is in the range from 2000KeV to 2500KeV and having a dosage which is in the range from 5*10<13> cm<-2> to 1*10<15> cm<-2>, wherein the doping concentration of the n-type SiC epitaxial layer 6 is in the range from 1*10<13> cm<-3> to 5*10<14> cm<-3>. According to the invention, the carrier concentration of the intrinsic layer can be reduced and the depletion region width can be increased, so the collection efficiency of generated electron hole pairs can be improved, so that the device open-circuit voltage and energy conversion efficiency can be improved.

Description

technical field [0001] The invention relates to the intersection field of nuclear science and technology and microelectronic technology, in particular to a PIN type isotope nuclear battery. technical background [0002] In 1953, it was discovered that β particles produced by isotope decay can generate electron-hole pairs in semiconductors, and this phenomenon is called β voltage effect. In 1957, people first applied the β voltage effect to the power supply, and successfully manufactured the first isotope micro-battery. Since 1989, GaN, GaP, AlGaAs, polysilicon and other materials have been used as materials for β-Voltaic batteries. With the preparation of the wide bandgap semiconductor material SiC and the advancement of process technology, since 2006, there have been reports on SiC-based isotope micro-batteries at home and abroad. [0003] In 2006, Chandrashekhar et al. of Cornell University in New York proposed a silicon carbide PIN junction isotope nuclear battery, whic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G21H1/06
Inventor 梅欣
Owner 溧阳市浙大产学研服务中心有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com