Method for manufacturing schottky room temperature nucleus radiation detector

Abstract

The invention discloses a Schottky-type room temperature nuclear radiation detector, comprising a Schottky structure formed by a GaN substrate, a Schottky electrode and an ohmic electrode, and is characterized in that: the GaN substrate is a thick film structure, and its thickness is It is 100um~200um, and the Schottky electrode and the ohmic electrode are respectively located on the two side surfaces of the GaN substrate. Because the GaN material used in the present invention has excellent properties such as wide band gap, high resistivity, large atomic number, strong covalent bond, high melting point, high breakdown electric field, corrosion resistance, radiation resistance, etc., the prepared room temperature nuclear radiation detection The detector has good room temperature sensitivity, detection efficiency and stability, and is more suitable for the detection of strong radiation fields. At the same time, the manufacturing process of the invention is simple, the cost is low, and it is suitable for industrialization promotion.

Description

technical field [0001] The invention relates to a nuclear radiation detector and a preparation method thereof, in particular to a Schottky-type GaN room temperature nuclear radiation detector and a preparation method thereof. Background technique [0002] Room temperature nuclear radiation detectors are a new type of detectors developed after gas detectors and scintillator detectors. They have high room temperature sensitivity, low noise, wide response spectrum, short pulse time, high detection efficiency, and radiation damage resistance. Strong, high stability and other advantages, it has a wide range of applications in the fields of environmental monitoring, nuclear medicine, industrial non-destructive testing, safety inspection, nuclear weapon penetration, aerospace, astrophysics and high-energy physics, and has become a frontier research hotspot in the modern high-tech field one. [0003] Since room temperature nuclear radiation detectors are required to work at room te...

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Problems solved by technology

[0004] At present, the CdZnTe (CZT) room temperature nuclear radiation detector is the most researched. The United States, Russia and other countries have commercialized the CZT crystal material and its detector. However, the crystal material has the following problems: ① Due to the thermal conductivity of the CZT crystal material It is extremely low, and its stacking defect formation energy is small, so that during the crystal growth process, factors such as temperature fluctuations can easily cause the appearance of twins; ②Due to its low critical shear stress, it is easy to generate dislocations; ③Its constituent elements Among them, the vapor partial pressure of Cd is much higher than that of the other two components, and it is easy to cause the melt to be rich in Te; ④ During the cooling process of its crystal growth, the width of the solid solution zone existing at high temperature is at room temperature will shrink to "0", it is easy to form Te precipitation / inclusion, which will affect the material performance; therefore, it is difficult to prepare high-quality CZT crystal and its detector, and its cost is also very expensive

However, the thickness of existing GaN ultraviolet detectors is only 1-2 microns, which is not suitable for room temperature nuclear radiation detection

[0007] On the other hand, in the prior art, when preparing the Schottky detector, the unidirectional growth process is adopted, and the contact electrode is prepared by multi-step photolithography, so the preparation process is relatively complicated, which also increases the detection rate. device manufacturing cost

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