Tunnel Compensation Superlattice Infrared Detector

Abstract

The invention discloses a tunnel compensating superlattice infrared detector, and belongs to the field of semiconductor optoelectronics. The original tunnel compensating multi-active region infrared detector improves the defects that the conventional multiquantum well or superlattice structured infrared detector has small photocurrent and large dark current, yet the original tunnel compensating multi-active region infrared detector is relatively large in production difficulty and low in yield. A lower contact layer is grown on a substrate, then one or more basic units are grown, an upper contact layer is grown, and a table surface and electrodes are produced, wherein the basic units are sequentially a blocking barrier, a superlattice infrared absorption region, a heavily doped N-type region and a heavily doped P-type region; the tunnel compensating superlattice infrared detector is characterized in that a superlattice structure is used as an infrared absorption region of the detector,so that control requirements on epitaxial structural parameters are reduced; the heavily doped N-type region and the heavily doped P-type region form a tunnel junction for providing tunnel compensating current for the superlattice; the blocking barrier has the thickness of 30-50nm so as to reduce the dark current of a device. The tunnel compensating superlattice infrared detector has the advantages of large photocurrent, low dark current, fast response and the like of the tunnel compensating multi-active region infrared detector.

Description

technical field [0001] The invention relates to a medium and long-wavelength infrared detection device, in particular to a tunnel compensation superlattice active region infrared detector, which belongs to the technical field of semiconductor optoelectronics. Background technique [0002] The traditional medium and long wave multiple quantum wells or superlattice structure infrared detectors are mainly GaAs / Ga1-xAlxAs material system or InxGa1-xAs / GaAs material system. The realization of its device structure is obtained by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD or OMVPE) technology epitaxial growth. Through the standard semiconductor process, the traditional medium and long wave multiple quantum well or superlattice structure infrared detection device is obtained, and its basic structure is as follows figure 1 , 2 Shown (taking the GaAs / Ga1-xAlxAs material system as an example): upper metal electrode 1; upper N-type GaAs contact laye...

AI Technical Summary

Problems solved by technology

This kind of detector has the following disadvantages: 1. The size of the photocurrent has nothing to do with the number of quantum wells; 2. When the device is working, there is a compensating recombination current in the conduction band, and the dark current of the device is large.

The specific conditions of the epitaxial structure are difficult to achieve precise control

If the actual doping concentration is lower than the design value, the depletion layer of the tunnel junction will be too wide and the quantum well will be narrowed. If the actual doping concentration is higher than the design value, the depletion layer will be too narrow and the quantum well will become wider, making it difficult to obtain the ideal detection wavelength

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