SiC ring electrode PIN-type nuclear battery

Abstract

The invention discloses a SiC ring electrode PIN-type nuclear battery and a manufacturing method thereof, which are mainly used for solving the problem that the conversion efficiency of the SiC PIN-junction battery in the prior art is lower. The SiC ring electrode PIN-type nuclear battery comprises a radioactive isotope source layer (1), a SiO2 passivation layer (3), a SiO2 compact insulation layer (2), a p-type ohmic contact electrode (4), a p-type SiC epitaxial layer (5) with the doping concentration of 1*1019-5*1019cm<-3>, an n-type SiC epitaxial layer (6) with the doping concentration of 1*1015-5*1015cm<-3>, an n-type SiC substrate (7) with the doping concentration of 1*1018-7*1018cm<-3> and an n-type ohmic contact electrode (8). A plurality of ring structures the centers of which arerings and the peripheries of which take the centers as circle centers are adopted in the p-type ohmic contact electrode, the rings are connected through a plurality of rectangular strips, a pluralityof pins are reserved on the peripheries of the rings, and the isotope source layer (1) covers the surface of the p-type ohmic contact electrode (4). The SiC ring electrode PIN-type nuclear battery has the advantage of high energy conversion efficiency and can be used as an MEMS (Micro-electromechanical System) on-chip power supply, a cardiac pacemaker power supply and a mobilephone standby power supply.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a PIN nuclear battery based on a silicon carbide ring electrode, which can be used to directly convert nuclear energy emitted by isotopes into electric energy. technical background [0002] In 1953, Rappaport discovered that the beta (β-Particle) particles produced by the decay of isotopes can generate electron-hole pairs in semiconductors. This phenomenon is called β-Voltaic Effect. Shortly thereafter, Elgin-Kidde first used the β-Voltaic Effect in power supply in 1957, and successfully manufactured the first isotope micro-battery β-Voltaic Battery. Since 1989, GaN, GaP, AlGaAs, polysilicon and other materials have been used as materials for β-Voltaic batteries. With the advancement of the preparation and process technology of SiC, a wide bandgap semiconductor material, since 2006, there have been reports on SiC-based isotope batteries in the world. [0003] The doc...

AI Technical Summary

Problems solved by technology

In this p-i-n junction structure, in order to prevent the ohmic contact electrode from blocking incident particles, the ohmic electrode must be overloaded in one corner of the device, but this will cause the irradiated carriers far away from the ohmic electrode to be recombined during the transport process, Moreover, the incident particles must pass through the surface SiO 2 Passivation layer, causing energy loss and reducing energy conversion efficiency

Images