Silicon carbide gridding electrode PIN type nuclear battery

Abstract

The invention discloses a silicon carbide gridding electrode PIN type nuclear battery and a manufacturing method thereof. By the silicon carbide gridding electrode PIN type nuclear battery and the manufacturing method thereof, the problem of low conversion efficiency during the manufacturing of silicon carbide PIN nucleus batteries in the prior art is solved. The silicon carbide gridding electrode PIN type nuclear battery comprises a radioactive isotope source layer (1), a SiO2 compact insulating layer (2), a SiO2 passivation layer (3), a p type ohmic contact electrode (4), a p type SiC epitaxial layer (5) of which the doping density is between 1*10<19> and 5*10<19>cm<-3>, an n type SiC epitaxial layer (6) of which the doping density is between 1*10<15> and 5*10<15>cm<-3>, an n type SiC substrate (7) of which the doping density is between 1*10<18> and 7*10<18>cm<-3> and an n type ohmic contact electrode (8), wherein the p type ohmic contact electrode (4) consists of a plurality of identical square grids, the square grids are formed by partitioning a plurality of transverse rectangular strips and a plurality of longitudinal rectangular strips, and a plurality of pins are reserved at the periphery of the integral grid electrode; and the radioactive isotope source layer (1) covers the surface of the p type ohmic contact electrode (4). The silicon carbide gridding electrode PIN type nuclear battery is high in energy conversion efficiency, and can be used as micro-electromechanical system (MEMS) on-chip power supplies, cardiac pacemaker power supplies and mobile standby power supplies.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a PIN type nuclear battery based on silicon carbide grid electrodes, which can be used to directly convert nuclear energy emitted by isotopes into electric energy. technical background [0002] In 1953, Rappaport discovered that the beta (β-Particle) particles produced by the decay of isotopes can generate electron-hole pairs in semiconductors. This phenomenon is called β-Voltaic Effect. Shortly thereafter, Elgin-Kidde first used the β-Voltaic Effect in power supply in 1957, and successfully manufactured the first isotope micro-battery β-Voltaic Battery. Since 1989, GaN, GaP, AlGaAs, polysilicon and other materials have been used as materials for β-Voltaic batteries. With the preparation of the wide bandgap semiconductor material SiC and the advancement of process technology, since 2006, there have been reports on SiC-based isotope micro-batteries at home and abroad. ...

AI Technical Summary

Problems solved by technology

In this p-i-n junction structure, in order to prevent the ohmic contact electrode from blocking incident particles, the ohmic electrode must be overloaded in one corner of the device, but this will cause the irradiated carriers far away from the ohmic electrode to be recombined during the transport process, Cause energy loss and reduce energy conversion efficiency

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