H-3 silicon carbide isotope battery and manufacturing method thereof

An isotope battery, H-3 technology, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problem of shallow electron range, radiation-generated carrier recombination loss, and radiation-generated carrier loss difficult Avoid problems such as wide depletion region thickness, improve energy conversion efficiency and packaging density, and promote high application value.

Active Publication Date: 2019-11-22
CHANGAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there are still many problems in the research of silicon carbide PN-type isotope cells using H-3. The biggest problem is how to avoid the recombination loss of irradiated carriers on the surface of the device.
like image 3 As shown, the range of electrons generated by H-3 is relatively shallow, and the peak is close to the device surface, and the loss of radiation-induced carriers caused by surface recombination is unavoidable

Method used

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  • H-3 silicon carbide isotope battery and manufacturing method thereof
  • H-3 silicon carbide isotope battery and manufacturing method thereof
  • H-3 silicon carbide isotope battery and manufacturing method thereof

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Experimental program
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Embodiment 1

[0060] A kind of H-3 silicon carbide PN type isotope cell, comprises the following steps:

[0061] Step 1: providing an N-type doped SiC substrate (1);

[0062] Step 2: Using chemical vapor deposition to epitaxially grow on the upper surface of the substrate in Step 1 with a doping concentration of 1×10 19 cm -3 , a P-type SiC ohmic contact doped region (2) with a thickness of 1.0 μm;

[0063] Step 3: Using chemical vapor deposition to epitaxially grow the upper surface of the P-type SiC ohmic contact doped region (2) with a doping concentration of 4×10 17 cm -3 a first N-type SiC epitaxial layer (3) with a thickness of 1.0 μm;

[0064] Step 4: Using chemical vapor deposition to epitaxially grow the upper surface of the first N-type SiC epitaxial layer (3) with a doping concentration of 3×10 16 cm -3 , a second N-type SiC epitaxial layer (4) with a thickness of 0.5 μm;

[0065] Step 5: Using chemical vapor deposition to epitaxially grow the upper surface of the second N...

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Abstract

The invention discloses an H-3 silicon carbide isotope battery and a manufacturing method thereof. The isotope battery comprises an N-type highly-doped SiC substrate and a P-type SiC ohmic contact doped region from bottom to top, wherein a first N-type SiC epitaxial layer is arranged in a partial region on the P-type SiC ohmic contact doped region; a second N-type SiC epitaxial layer is arranged on the first N-type SiC epitaxial layer; a P-type ohmic contact electrode is arranged in a region, except the first N-type SiC epitaxial layer, on the P-type SiC ohmic contact doped region; an N-type ohmic contact doped region is arranged partially in a region on the second N-type SiC epitaxial layer; an N-type ohmic contact electrode is arranged on the N-type ohmic contact doped region; a SiO2 passivation layer is arranged in a region, except the N-type ohmic contact doped region, on the second N-type SiC epitaxial layer; and an H-3 radioactive isotope source is arranged on the SiO2 passivation layer. The design is novel and reasonable, the problem of irradiation generated carrier recombination loss of H-3 on the surface can be effectively solved, and the output power and the energy conversion efficiency of the isotope battery are effectively improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices and semiconductor technology, and in particular relates to an H-3 silicon carbide isotope battery and a manufacturing method thereof. Background technique [0002] The isotope battery is an energy conversion device that converts nuclear radiation energy into electrical energy by using the radiovoltaic effect produced by charged particles produced by the decay of radioactive isotopes in semiconductor devices. Among many types of micro-energy sources, isotope batteries are regarded as the most ideal long-term energy sources for MEMS systems due to their high reliability, easy integration, and strong anti-interference. High output power is the prerequisite for the wide application of micronuclear batteries. However, due to the self-absorption effect and cost of isotope sources, it is difficult for micronuclear batteries to increase the output power by increasing the activity of the radi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21H1/06H01L31/068H01L31/18
CPCG21H1/06H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 张林朱礼亚王晓艳
Owner CHANGAN UNIV
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